公开(公告)号：WO1997042644A1

公开(公告)日：1997-11-13

申请号：PCT/US1997007855

申请日：1997-05-05

Applicant: MICRON DISPLAY TECHNOLOGY, INC.

Inventor： MICRON DISPLAY TECHNOLOGY, INC. ,  XIA, Zhongyi ,  WESTPHAL, Michael, J. ,  LEE, John, K. ,  BROWNING, Jim, J.

IPC: H01J01/30

CPC classification number: H01J29/06 ,  H01J1/3042 ,  H01J29/96 ,  H01J2201/304 ,  H01J2201/319 ,  H01J2329/00

Abstract: A field emission display having emitters controlled by an integrated driving circuit. The field emission display includes a charge shield positioned above exposed areas of the substrate to protect driving circuitry integrated into the substrate. The charge shield is a conductive layer within an insulative layer covering the driving circuit. The charge shield is connected to ground or to a low reference potential to bleed away current within the insulative layer, thereby preventing drifting charges from affecting the electrical response of the integrated driving circuit. The charge shield also terminates electric fields within the insulative layer to reduce the effect on the integrated driving circuit of dynamic variations in surface charge. Electrical characteristics of the driving circuit thus remain constant, reducing variations in the current supplied to the emitters, thereby reducing variations in the intensity of light emitted by the display.

Abstract translation: 具有由集成驱动电路控制的发射极的场致发射显示器。 场发射显示器包括位于衬底的暴露区域之上的电荷屏蔽，以保护集成到衬底中的驱动电路。 电荷屏蔽是覆盖驱动电路的绝缘层内的导电层。 电荷屏蔽层连接到地或低参考电位以排除绝缘层内的电流，从而防止漂移电荷影响集成驱动电路的电响应。 电荷屏蔽还终止绝缘层内的电场，以减少集成驱动电路对表面电荷的动态变化的影响。 因此，驱动电路的电气特性保持恒定，减少了提供给发射器的电流的变化，从而减少了由显示器发射的光的强度变化。

公开(公告)号：WO1994029841A1

公开(公告)日：1994-12-22

申请号：PCT/US1994006758

申请日：1994-06-14

Applicant: MICRON DISPLAY TECHNOLOGY, INC.

Inventor： MICRON DISPLAY TECHNOLOGY, INC. ,  BROWNING, Jim, J. ,  HUSH, Glen, E. ,  LEE, John, K.

IPC: G09G03/10

CPC classification number: G09G3/22 ,  G09G3/2011 ,  G09G2300/08 ,  G09G2310/0248 ,  H01J31/127 ,  H01J2201/319

Abstract: A field emission display (110) of the active matrix type is arranged in rows and columns with a current source (126) for each column. As an active matrix display, each pixel circuit (118) in an array of pixel circuits (116) includes a switch for enabling display by that pixel circuit. By locating the current source (126) outside the array (116), for example outside a contour circumscribing the array when the display is formed on a susbstrate, smaller pixel circuit geometries are achieved.

Abstract translation: 有源矩阵类型的场发射显示器（110）以行和列布置，每列具有电流源（126）。 作为有源矩阵显示器，像素电路（116）阵列中的每个像素电路（118）包括用于使该像素电路能够显示的开关。 通过将电流源（126）定位在阵列（116）外部，例如当在显示器形成在突起上时围绕阵列的轮廓外部，实现较小的像素电路几何形状。

公开(公告)号：WO1998008243A1

公开(公告)日：1998-02-26

申请号：PCT/US1997014693

申请日：1997-08-20

Applicant: MICRON DISPLAY TECHNOLOGY, INC.

Inventor： MICRON DISPLAY TECHNOLOGY, INC. ,  CATHEY, David, A., Jr. ,  TJADEN, Kevin, W. ,  MORADI, Behnam ,  LEE, John, K. ,  ALWAN, James, J.

IPC: H01J01/30

CPC classification number: H01J1/3042 ,  H01J1/304 ,  H01J31/127 ,  H01J2201/319 ,  H01J2329/00

Abstract: A semiconductor device for use in field emission displays includes a substrate (30) formed from a semiconductor material, glass, soda lime, or plastic. A first layer of a conductive material (28) is formed on the substrate. A second resistive layer of microcrystalline silicon (32) is formed on the first layer. This layer has characteristics that do not fluctuate in response to conditions that vary during the operation of the field emission display, particularly the varying light intensity from the emitted electrons or from the ambient. One or more cold-cathode emitters (34) are formed on the second layer.

Abstract translation: 用于场发射显示器的半导体器件包括由半导体材料形成的衬底（30），玻璃，钠钙或塑料。 导电材料（28）的第一层形成在衬底上。 在第一层上形成微晶硅（32）的第二电阻层。 该层具有响应于在场发射显示器的操作期间变化的条件，特别是来自发射的电子或来自环境的变化的光强度而不波动的特性。 一个或多个冷阴极发射器（34）形成在第二层上。

公开(公告)号：EP0839387B1

公开(公告)日：2004-07-21

申请号：EP96924472.2

申请日：1996-07-12

Applicant: MICRON DISPLAY TECHNOLOGY, INC.

Inventor： LEE, John, K. ,  CATHEY, David, A., Jr. ,  TJADEN, Kevin

IPC: H01L21/70 ,  H01J1/02 ,  H01J1/46 ,  H01J7/44 ,  H01J21/10 ,  H01J23/16 ,  G09G3/10

CPC classification number: H01L28/24 ,  H01J9/025 ,  H01J2201/319 ,  H01L28/20

Abstract: A method for forming resistors for regulating current in a field emission display (10) comprises integrating a high resistance resistor (32) into circuitry for the field emission display. The resistor (32) is in electrical communication with emitter sites (14) for the field emission display (10) and with other circuit components such as ground. The high resistance resistor (32) can be formed as a layer of a high resistivity material, such as intrinsic polycrystalline silicon, polycrystalline silicon doped with a conductivity-degrading dopant, lightly doped polysilicon, titanium oxynitride, tantalum oxynitride or a glass type material deposited on a baseplate (12) of the field emission display (10). Contacts (38, 39) are formed in the high resistivity material to establish electrical communication between the resistor (32) and the emitter sites (14) and between the resistor (32) and the other circuit components. The contacts (38, 39) can be formed as low resistance contacts (e.g., ohmic contacts) or as high resistance contacts (e.g., Schottky contacts).

公开(公告)号：EP0839387A1

公开(公告)日：1998-05-06

申请号：EP96924472.0

申请日：1996-07-12

Applicant: MICRON DISPLAY TECHNOLOGY, INC.

Inventor： LEE, John, K. ,  CATHEY, David, A., Jr. ,  TJADEN, Kevin

IPC: H01J1 ,  H01J9 ,  H01J29 ,  H01J31 ,  H01L21 ,  H01L27

CPC classification number: H01L28/24 ,  H01J9/025 ,  H01J2201/319 ,  H01L28/20

Abstract: A method for forming resistors for regulating current in a field emission display (10) comprises integrating a high resistance resistor (32) into circuitry for the field emission display. The resistor (32) is in electrical communication with emitter sites (14) for the field emission display (10) and with other circuit components such as ground. The high resistance resistor (32) can be formed as a layer of a high resistivity material, such as intrinsic polycrystalline silicon, polycrystalline silicon doped with a conductivity-degrading dopant, lightly doped polysilicon, titanium oxynitride, tantalum oxynitride or a glass type material deposited on a baseplate (12) of the field emission display (10). Contacts (38, 39) are formed in the high resistivity material to establish electrical communication between the resistor (32) and the emitter sites (14) and between the resistor (32) and the other circuit components. The contacts (38, 39) can be formed as low resistance contacts (e.g., ohmic contacts) or as high resistance contacts (e.g., Schottky contacts).