公开(公告)号：WO2021055635A1

公开(公告)日：2021-03-25

申请号：PCT/US2020/051321

申请日：2020-09-17

Applicant: MICRON TECHNOLOGY, INC.

Inventor： HARMS, Jonathan D.

IPC: G06Q20/38 ,  G06Q20/06 ,  G06Q20/16 ,  H04L29/08

Abstract: Computerized apparatus using characterized devices such as memories for intensive computational applications such as blockchain processing. In one embodiment, the computerized apparatus comprises a computational appliance (e.g., stand-alone box, server blade, plug-in card, or mobile device) that includes characterized memory devices. These memory devices are associated with a range of performances over a range of operational parameters, and can be used in conjunction with a solution density function to optimize memory searching. In one embodiment, the ledger appliance can communicate with other ledger appliances to create and/or use a blockchain ledger so as to facilitate decentralized exchanges between untrusted parties. In some variants, the ledger appliance may additionally use an application programming interface (API) to dynamically generate blockchains on the fly. Various other applications are also described (e.g., social media, machine learning, probabilistic applications and other error-tolerant applications).

公开(公告)号：WO2020263583A1

公开(公告)日：2020-12-30

申请号：PCT/US2020/037246

申请日：2020-06-11

Applicant: MICRON TECHNOLOGY, INC.

Inventor： HULTON, David ,  SCHMITZ, Tamara ,  HARMS, Jonathan D. ,  CHRITZ, Jeremy ,  MAJERUS, Kevin

IPC: G11C29/00 ,  G11C29/44 ,  G06N3/06

Abstract: Methods, apparatuses, and systems for repairing defective memory cells in regions of a memory array associated with high or low priority levels are disclosed. A repair address generator may be configured to generate a memory address map for repair (e.g., blowing fuses at a fuse circuit), depending on whether certain applications may operate at a high priority level indicative of a low bit error rate or a low priority level indicative of a higher bit error rate. For example, a specified error rate associated with a low priority level may correspond to a threshold error rate for certain applications, such as a neural network application that stores trained weights. Such neural network applications may access trained weights being partially stored in defective memory cells, with the least significant bits of such trained weights being stored in defective memory cells that are not repaired according to the memory address map.

公开(公告)号：WO2015142614A1

公开(公告)日：2015-09-24

申请号：PCT/US2015/020157

申请日：2015-03-12

Applicant: MICRON TECHNOLOGY, INC.

Inventor： HARMS, Jonathan D. ,  CHEN, Wei ,  MURTHY, Sunil S.

IPC: G11C11/16

CPC classification number: H04L43/08 ,  G11C11/161 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12 ,  H04L43/02

Abstract: Spin torque transfer memory cells and methods of forming the same are described herein. As an example, spin torque transfer memory cells may include a self-aligning polarizer, a pinned polarizer, a storage material formed between the self-aligning polarizer and the pinned polarizer, a first oxide material formed between the pinned polarizer and the storage material, and a second oxide material formed between the storage material and the self-aligning polarizer.

Abstract translation: 旋转转矩传递存储器单元及其形成方法在此描述。 作为示例，自旋扭矩传递存储单元可以包括自对准偏振器，钉扎偏振器，形成在自对准偏振器和被钉扎偏振器之间的存储材料，形成在钉扎偏振器和存储材料之间的第一氧化物材料， 以及形成在所述存储材料和所述自对准偏振器之间的第二氧化物材料。

公开(公告)号：WO2021247207A1

公开(公告)日：2021-12-09

申请号：PCT/US2021/031740

申请日：2021-05-11

Applicant: MICRON TECHNOLOGY, INC.

Inventor： HOSSEINIMAKAREM, Zahra ,  HARMS, Jonathan D. ,  SCARBROUGH, Alyssa N. ,  VENGERTSEV, Dmitry ,  HU, Yi

IPC: G06T7/40 ,  G06T17/00 ,  G01B11/2513 ,  G01B11/303 ,  G01N21/88

Abstract: Embodiments of the disclosure are drawn to projecting light on a surface and analyzing the scattered light to obtain spatial information of the surface and generate a three dimensional model of the surface. The three dimensional model may then be analyzed to calculate one or more surface characteristics, such as roughness. The surface characteristics may then be analyzed to provide a result, such as a diagnosis or a product recommendation. In some examples, a mobile device is used to analyze the surface.

公开(公告)号：WO2021236324A1

公开(公告)日：2021-11-25

申请号：PCT/US2021/030812

申请日：2021-05-05

Applicant: MICRON TECHNOLOGY, INC.

Inventor： MANNING, Troy A. ,  HARMS, Jonathan D. ,  LARSEN, Troy D. ,  HUSH, Glen E. ,  FINKBEINER, Timothy P.

IPC: G06F15/78 ,  G06F12/06 ,  G06F13/16 ,  G06F9/4401 ,  G06F9/445

Abstract: Methods, systems, and devices for operational code storage for an on-die microprocessor are described. A microprocessor may be formed on-die with a memory array. Operating code for the microprocessor may be stored in the memory array, possibly along with other data (e.g., tracking or statistical data) used or generated by the on-die microprocessor. A wear leveling algorithm may result in some number of rows within the memory array not being used to store user data at any given time, and these rows may be used to store the operating code and possibly other data for the on-die microprocessor. The on-die microprocessor may boot and run based on the operating code stored in memory array.

公开(公告)号：EP4032054A1

公开(公告)日：2022-07-27

申请号：EP20865896.3

申请日：2020-09-17

Applicant: Micron Technology, Inc.

Inventor： HARMS, Jonathan D.

IPC: G06Q20/38 ,  G06Q20/06 ,  G06Q20/16 ,  H04L29/08

公开(公告)号：EP3231019A1

公开(公告)日：2017-10-18

申请号：EP15867541.3

申请日：2015-11-19

Applicant: Micron Technology, Inc.

Inventor： CHEN, Wei ,  KULA, Witold ,  HARMS, Jonathan D. ,  MURTHY, Sunil S.

IPC: H01L43/10 ,  H01L43/02 ,  H01L43/08

CPC classification number: H01L43/10 ,  B82Y25/00 ,  G11B5/39 ,  G11B5/3909 ,  H01L27/11502 ,  H01L27/11507 ,  H01L27/222 ,  H01L43/08

Abstract: A magnetic tunnel junction includes a conductive first magnetic electrode that includes magnetic recording material. A conductive second magnetic electrode is spaced from the first electrode and includes magnetic reference material. A non-magnetic tunnel insulator material is between the first and second electrodes. The magnetic reference material of the second electrode includes a non-magnetic region comprising elemental iridium. The magnetic reference material includes a magnetic region comprising elemental cobalt or a cobalt-rich alloy between the non-magnetic region and the tunnel insulator material.

Abstract translation: 磁隧道结包括包含磁记录材料的导电第一磁电极。 导电的第二磁性电极与第一电极隔开并且包括磁性参考材料。 非磁性隧道绝缘体材料位于第一和第二电极之间。 第二电极的磁性参考材料包括含有元素铱的非磁性区域。 磁性参考材料包括在非磁性区域和隧道绝缘体材料之间包含元素钴或富钴合金的磁性区域。

公开(公告)号：EP3227931A1

公开(公告)日：2017-10-11

申请号：EP15864457.5

申请日：2015-11-24

Applicant: Micron Technology, Inc.

Inventor： CHEN, Wei ,  HARMS, Jonathan D. ,  MURTHY, Sunil

IPC: H01L43/02 ,  H01L43/10 ,  H01L43/08 ,  H01L43/12

CPC classification number: H01L43/08 ,  G11C11/161 ,  H01L27/228 ,  H01L43/12

Abstract: A magnetic cell structure comprises a seed material including tantalum, platinum, and ruthenium. The seed material comprises a platinum portion overlying a tantalum portion, and a ruthenium portion overlying the platinum portion. The magnetic cell structure comprises a magnetic region overlying the seed material, an insulating material overlying the magnetic region, and another magnetic region overlying the insulating material. Semiconductor devices including the magnetic cell structure, methods of forming the magnetic cell structure and the semiconductor devices are also disclosed.

Abstract translation: 磁电池结构包括包含钽，铂和钌的种子材料。 晶种材料包括覆盖钽部分的铂部分和覆盖铂部分的钌部分。 磁性单元结构包括覆盖种子材料的磁性区域，覆盖磁性区域的绝缘材料以及覆盖绝缘材料的另一磁性区域。 还公开了包括磁性单元结构的半导体器件，形成磁性单元结构的方法和半导体器件。