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1.
公开(公告)号:JP2002283296A
公开(公告)日:2002-10-03
申请号:JP2001360360
申请日:2001-11-27
Applicant: MICROSCAN SYSTEMS INC , XEROX CORP
Inventor: SCHARF BRUCE R , GULVIN PETER M , CHEN JINGKUANG , KUBBY JOEL A , LIN CHUANG-CHIA , TRAN ALEX T
IPC: B81C1/00 , B81B3/00 , H01L21/762 , H01L27/14
Abstract: PROBLEM TO BE SOLVED: To improve mechanical and optical characteristics by a micromechanical or microoptomechanical structure in a silicon (SOI) wafer on an insulator. SOLUTION: This invention provides the micromechanical or microoptomechanical structure. This structure is manufactured by processing comprising the following stages: that is, to define a pattern on a monocrystal silicon layer 12 separated from a substrate layer 14 by an insulating layer 16, to define the structure on the monocrystal silicon layer 12, to deposit and etch polysilicon layers 40 and 42 on the monocrystal silicon layer 12 while leaving polysilicon for forming a mechanical element or an optical element of the structure as it is, and to dissociate the formed structure.
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公开(公告)号:JP2003262832A
公开(公告)日:2003-09-19
申请号:JP2002349923
申请日:2002-12-02
Applicant: MICROSCAN SYSTEMS INC
Inventor: SCHARF BRUCE R , DAIBER TROY D
Abstract: PROBLEM TO BE SOLVED: To provide a device that overcomes the disadvantage of refractive and diffractive elements. SOLUTION: This micro-opto-electromechanical apparatus comprises: a silicon wafer comprising a plurality of layers; the reflector formed in one of the plurality of layers; and a pattern on the reflector to focus or collimate an incident beam of radiation into a reflected beam. COPYRIGHT: (C)2003,JPO
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3.
公开(公告)号:JP2002283297A
公开(公告)日:2002-10-03
申请号:JP2001360362
申请日:2001-11-27
Applicant: MICROSCAN SYSTEMS INC , XEROX CORP
Inventor: SCHARF BRUCE R , KUBBY JOEL A , LIN CHUANG-CHIA , TRAN ALEX T , ZOSEL ANDREW J , GULVIN PETER M , CHEN JINGKUANG
IPC: B81C1/00 , B81B3/00 , H01L21/762 , H01L27/14
Abstract: PROBLEM TO BE SOLVED: To improve mechanical and optical characteristics by a micromechanical or microoptomechanical structure in a silicon (SOI) wafer on an insulator. SOLUTION: This invention provides the micromechanical or microoptomechanical structure. This structure is manufactured by processing comprising the following stages: that is, to define the structure on a monocrystal silicon layer 12 separated from a substrate layer 14 by an insulating layer 16, to selectively etch the monocrystal silicon layer 12, to deposit and etch polysilicon layers 40 and 42 on the insulating layer 16 while leaving polysilicon for forming a mechanical element of the structure as it is, and to dissociate the formed structure.
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公开(公告)号:DE60128437T2
公开(公告)日:2008-01-17
申请号:DE60128437
申请日:2001-11-27
Applicant: MICROSCAN SYSTEMS INC , XEROX CORP
Inventor: SCHARF BRUCE R , KUBBY JOEL A , LIN CHUANG-CHIA , TRAN ALEX T , ZOSEL ANDREW J , GULVIN PETER M , CHEN JINGKUANG
IPC: B81B3/00 , B81C1/00 , H01L21/762 , H01L27/14
Abstract: The present invention provides a micromechanical or microoptomechanical structure produced by a process comprising defining the structure in a single-crystal silicon layer separated by an insulator layer from a substrate layer; selectively etching the single crystal silicon layer; depositing and etching a polysilicon layer on the insulator layer, with remaining polysilicon forming mechanical elements of the structure; metalizing a backside of the structure; and releasing the formed structure.
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公开(公告)号:DE60128440T2
公开(公告)日:2008-01-24
申请号:DE60128440
申请日:2001-11-27
Applicant: MICROSCAN SYSTEMS INC , XEROX CORP
Inventor: SCHARF BRUCE R , GULVIN PETER M , CHEN JINGKUANG , KUBBY JOEL A , LIN CHUANG-CHIA , TRAN ALEX T
IPC: B81B3/00 , B81C1/00 , H01L21/762 , H01L27/14
Abstract: The present invention provides a micromechanical or microoptomechanical structure. The structure is produced by a process comprising defining a pattern on a single crystal silicon layer separated by an insulator layer from a substrate layer; defining a structure in the single-crystal silicon layer; depositing and etching a polysilicon layer on the single crystal silicon layer, with remaining polysilcon forming mechanical or optical elements of the structure; and releasing the formed structure.
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公开(公告)号:DE60128440D1
公开(公告)日:2007-06-28
申请号:DE60128440
申请日:2001-11-27
Applicant: MICROSCAN SYSTEMS INC , XEROX CORP
Inventor: SCHARF BRUCE R , GULVIN PETER M , CHEN JINGKUANG , KUBBY JOEL A , LIN CHUANG-CHIA , TRAN ALEX T
IPC: B81B3/00 , B81C1/00 , H01L21/762 , H01L27/14
Abstract: The present invention provides a micromechanical or microoptomechanical structure. The structure is produced by a process comprising defining a pattern on a single crystal silicon layer separated by an insulator layer from a substrate layer; defining a structure in the single-crystal silicon layer; depositing and etching a polysilicon layer on the single crystal silicon layer, with remaining polysilcon forming mechanical or optical elements of the structure; and releasing the formed structure.
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公开(公告)号:DE60128437D1
公开(公告)日:2007-06-28
申请号:DE60128437
申请日:2001-11-27
Applicant: MICROSCAN SYSTEMS INC , XEROX CORP
Inventor: SCHARF BRUCE R , KUBBY JOEL A , LIN CHUANG-CHIA , TRAN ALEX T , ZOSEL ANDREW J , GULVIN PETER M , CHEN JINGKUANG
IPC: B81B3/00 , B81C1/00 , H01L21/762 , H01L27/14
Abstract: The present invention provides a micromechanical or microoptomechanical structure produced by a process comprising defining the structure in a single-crystal silicon layer separated by an insulator layer from a substrate layer; selectively etching the single crystal silicon layer; depositing and etching a polysilicon layer on the insulator layer, with remaining polysilicon forming mechanical elements of the structure; metalizing a backside of the structure; and releasing the formed structure.
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