A METHOD OF PREPARING GRAPHENE OXIDE PATTERNS ON AWAFER-SCALE LEVEL

    公开(公告)号:MY179655A

    公开(公告)日:2020-11-11

    申请号:MYPI2016002288

    申请日:2016-12-22

    Applicant: MIMOS BERHAD

    Abstract: A process of preparing graphene oxide patterns includes the steps of depositing graphene oxide onto an insulating wafer to form a graphene oxide sheets, deoxygenating the graphene oxide sheets to form deoxygenated graphene oxide sheets, coating a photoresist layer on the deoxygenated graphene oxide sheets to form photoresist coated deoxygenated graphene oxide sheets, curing the photoresist coated deoxygenated graphene oxide sheets to form cured photoresist coated deoxygenated graphene oxide sheets, exposing the cured photoresist coated deoxygenated graphene oxide sheets to UV to form UV exposed photoresist coated deoxygenated graphene oxide sheets, creating a mask on the UV exposed photoresist coated deoxygenated graphene oxide sheets by developing the photoresist layer in a developer solution to form exposed region, etching the exposed region of the deoxygenated graphene oxide sheets using plasma source to produce graphene oxide patterns, and removing remaining photoresist layer by dissolving the deoxygenated graphene oxide sheets in an organic solvent to obtain the insulating wafer with graphene oxide patterns Figure 2

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