公开(公告)号：MY165721A

公开(公告)日：2018-04-20

申请号：MYPI2013702270

申请日：2013-11-26

Applicant: MIMOS BERHAD

Inventor： LEE WAI YEE ,  DANIEL BIEN CHIA SHENG ,  KHAIRUL ANUAR BIN ABD WAHID ,  AMIRUL BIN ABD RASHID

IPC: B81C1/00

Abstract: A method of forming nanomaterials (10) on packaged sensor device platform, the method comprising the steps of fabricating (11) a sensor device platform on full scale wafer to form a fully packaged sensor device platform for nanomaterials forming process (10) which comprises the steps of protecting the wire bond with epoxy while leaving the sensing area exposed for receiving coating of catalyst precursor for the nanomaterial growth, nucleating (16) the coated catalyst precursor at low temperature for forming an active nanoparticle, and providing the active nanoparticle nucleation with nutrient solution for turning them into solid and forming nanostructures for integration of readout circuit for sensing. Most illustrative diagram: Figure 3

公开(公告)号：MY167491A

公开(公告)日：2018-08-30

申请号：MYPI2013702254

申请日：2013-11-25

Applicant: MIMOS BERHAD

Inventor： DANIEL BIEN CHIA SHENG ,  LEE WAI YEE ,  LEE HING WAH ,  KHAIRUL ANUAR BIN ABD WAHID

IPC: B82Y30/00 ,  B82Y40/00 ,  H01L51/10

Abstract: THE PRESENT INVENTION RELATES TO A METHOD OF FORMING A DEVICE, MORE PARTICULARLY THE PRESENT INVENTION RELATES TO A METHOD OF FORMING A GRAPHENE DEVICE BY EFFECTIVELY TRANSFERRING A GRAPHENE LAYER COMPRISING THE STEPS OF PROVIDING AT LEAST A FIRST MATERIAL (11) LAYER, DEPOSITING AT LEAST A SECOND MATERIAL (12) LAYER ON SAID AT LEAST A FIRST MATERIAL (11) LAYER, AND DEPOSITING AT LEAST A CATALYST LAYER (21) ON SAID AT LEAST A SECOND MATERIAL (12) LAYER FOR FORMING NANOSTRUCTURES (22), ETCHING SAID AT LEAST A FIRST MATERIAL (11) LAYER, AND TRANSFERRING REMAINING LAYERS OF SAID AT LEAST A SECOND MATERIAL (12) LAYER WITH NANOSTRUCTURES (22) ONTO AT LEAST A SUBSTRATE (13). MOST ILLUSTRATIVE DRAWING:

公开(公告)号：MY179655A

公开(公告)日：2020-11-11

申请号：MYPI2016002288

申请日：2016-12-22

Applicant: MIMOS BERHAD

Inventor： MOHD ISMAHADI SYONO ,  MUHAMMAD ANIQ SHAZNI BIN MOHAMMAD HANIFF ,  KHAIRUL ANUAR BIN ABD WAHID ,  RAZISZI BIN ITHNIN ,  ABDUL HALIM BIN ADOM

Abstract: A process of preparing graphene oxide patterns includes the steps of depositing graphene oxide onto an insulating wafer to form a graphene oxide sheets, deoxygenating the graphene oxide sheets to form deoxygenated graphene oxide sheets, coating a photoresist layer on the deoxygenated graphene oxide sheets to form photoresist coated deoxygenated graphene oxide sheets, curing the photoresist coated deoxygenated graphene oxide sheets to form cured photoresist coated deoxygenated graphene oxide sheets, exposing the cured photoresist coated deoxygenated graphene oxide sheets to UV to form UV exposed photoresist coated deoxygenated graphene oxide sheets, creating a mask on the UV exposed photoresist coated deoxygenated graphene oxide sheets by developing the photoresist layer in a developer solution to form exposed region, etching the exposed region of the deoxygenated graphene oxide sheets using plasma source to produce graphene oxide patterns, and removing remaining photoresist layer by dissolving the deoxygenated graphene oxide sheets in an organic solvent to obtain the insulating wafer with graphene oxide patterns Figure 2

公开(公告)号：MY167930A

公开(公告)日：2018-10-04

申请号：MYPI2014701169

申请日：2014-05-07

Applicant: MIMOS BERHAD

Inventor： LEE HING WAH ,  DANIEL BIEN CHIA SHENG ,  KHAIRUL ANUAR BIN ABD WAHID ,  KHAIROM NIZAM BIN ATAN @ MOHAM ,  ANIFAH BINTI ZAKARIA

IPC: H01L21/027

Abstract: The present invention provides an etch-free method for conductive electrode formation. The method comprises depositing an insulating layer (104) on a substrate (102), spin coating a first polymer layer (106) on the substrate (102), patterning the first polymer layer (106) by photo-lithography and depositing a conductive metal layer by physical deposition to form a top metallic layer (108) and a bottom metallic layer (110).