公开(公告)号：MY142676A

公开(公告)日：2010-12-15

申请号：MYPI20072005

申请日：2007-11-15

Applicant: MIMOS BERHAD

Inventor： ABDUL RANI ROZINA ,  LEE HING WAH ,  ABDULLAH ALI ZAINI ,  MAT HUSSIN MOHD ROFEI ,  ZAKARIA AZLAN ,  MOHD ZAIN AZLINA ,  MOHAMD BADARUDDIN SITI AISHAH ,  NGAH NOR AZHADI

IPC: G01N27/414

Abstract: AN MTEGRATED ION SENSITIVE FIELD EFFECT TRANSISTOR SENSOR 5 A CHEMICAL SENSOR HAVING AN ION SENSITIVE FIELD EFFECT TRANSISTOR (ISFET) COMPRISING A SUBSTRATE (10) SITUATED WITH A SOURCE (4) AND A DRAIN (3); AN ION SENSING GATE (5) DISPOSED BETWEEN THE SOURCE AND THE DRAIN; AN ION-SENSITIVE FILM (1) FORMED ON THE SURFACE OF THE SUBSTRATE AND THE ION SENSING GATE-, AN ELECTRODE DOMAIN (6) FORMED ON 10 THE ION-SENSITIVE FILM SURROUNDING THE PERIPHERY OF THE ION SENSING GATE (5) CHARACTERIZED IN THAT THE ELECTRODE DOMAIN (6) IS MADE OF TUNGSTEN, TITANIUM OR TUNGSTEN SILICIDE. (MOST ILLUSTRATED BY

公开(公告)号：WO2009066991A3

公开(公告)日：2009-10-22

申请号：PCT/MY2008000157

申请日：2008-11-24

Applicant: MIMOS BERHAD ,  ABDUL RANI ROZINA ,  LEE HING WAH ,  ABD AZIZ AIMAN SAJIDAH ,  SYONO MOHD ISMAHADI ,  ABDULLAH ALI ZAINI ,  MAT HUSSIN MOHD ROFEI BIN

Inventor： ABDUL RANI ROZINA ,  LEE HING WAH ,  ABD AZIZ AIMAN SAJIDAH ,  SYONO MOHD ISMAHADI ,  ABDULLAH ALI ZAINI ,  MAT HUSSIN MOHD ROFEI BIN

IPC: A01G31/02

CPC classification number: A01G7/00 ,  A01G31/00

Abstract: The present invention relates to an apparatus and a method for controlling and monitoring nutrient solution to be supplied to a plant.

Abstract translation: 本发明涉及一种用于控制和监测供给植物的营养液的设备和方法。

公开(公告)号：WO2009045092A3

公开(公告)日：2009-06-11

申请号：PCT/MY2008000117

申请日：2008-09-29

Applicant: MIMOS BERHAD ,  SYONO MOHD ISMAHADI ,  ABDUL RANI ROZINA ,  LEE HING WAH

Inventor： SYONO MOHD ISMAHADI ,  ABDUL RANI ROZINA ,  LEE HING WAH

IPC: G01N27/333

CPC classification number: F04B19/006 ,  G01N27/4148

Abstract: The present invention relates to a fully integrated ISFET valveless micropump for use as a pH sensor and as a chemical based sensor especially intended for Wireless Sensor Network (WSN) characterized in that wherein the valveless pump with ISFET is embedded along a pump channel and temperature sensors at its inlet and wherein a membrane in the middle is the pump diaphragm and is electrostatically actuated by an electrode above it which is deposited on the glass and wherein when the membrane controlled by a microcontroller is in motion, fluid or gas would be pumped in thru the inlet and travels thru the channel where ISFET is located and out thru the outlet.

Abstract translation: 本发明涉及用作pH传感器和特别用于无线传感器网络（WSN）的基于化学传感器的完全集成的ISFET无阀微型泵，其特征在于，其中具有ISFET的无阀泵沿泵通道和温度传感器 在其入口处，并且其中中间的膜是泵隔膜，并且由其上方的电极静电致动，沉积在玻璃上，并且其中当由微控制器控制的膜运动时，流体或气体将被泵送通过 入口并通过ISFET所在的通道穿过出口。

公开(公告)号：WO2009045091A3

公开(公告)日：2009-06-04

申请号：PCT/MY2008000116

申请日：2008-09-29

Applicant: MIMOS BERHAD ,  SYONO MOHD ISMAHADI ,  ABDUL RANI ROZINA

Inventor： SYONO MOHD ISMAHADI ,  ABDUL RANI ROZINA

IPC: G01N27/333 ,  G01N27/30

CPC classification number: G01N27/4148

Abstract: The present invention generally relates to a vertical thin polysilicon substrate ISFET for the measurement of hydrogen ions (pH) and other ion activity in solution characterized in that wherein the present invention comprises of a method of making polysilicon vertical ISFET which is fully CMOS compatible and wherein the substrate is the polysilicon which is vertically sandwiched between a source and a drain and wherein a very high drive current is possible to achieve due to the thin polysilicon material and wherein the sandwiched structure is designed to ensure excellent noise isolation and wherein the gate lies on the same surface level as the drain and hence a very large area for better gate sensitivity is possible.

Abstract translation: 本发明一般涉及用于测量溶液中氢离子（pH）和其它离子活性的垂直薄多晶硅衬底ISFET，其特征在于其中本发明包括制造完全CMOS兼容的多晶硅垂直ISFET的方法，其中 衬底是垂直夹在源极和漏极之间的多晶硅，并且其中由于薄的多晶硅材料可以实现非常高的驱动电流，并且其中夹层结构被设计成确保优异的噪声隔离，并且其中栅极位于 与漏极相同的表面水平，因此具有非常大的面积以获得更好的栅极灵敏度是可能的。

公开(公告)号：WO2009064166A2

公开(公告)日：2009-05-22

申请号：PCT/MY2008000140

申请日：2008-11-14

Applicant: MIMOS BERHAD ,  ABDUL RANI ROZINA ,  LEE HING WAH ,  ABDULLAH ALI ZAINI ,  MAT HUSSIN MOHD ROFEI ,  ZAKARIA AZLAN ,  MOHD ZAIN AZLINA ,  MOHAMD BADARUDDIN SITI AISHAH ,  NGAH NOR AZHADI

Inventor： ABDUL RANI ROZINA ,  LEE HING WAH ,  ABDULLAH ALI ZAINI ,  MAT HUSSIN MOHD ROFEI ,  ZAKARIA AZLAN ,  MOHD ZAIN AZLINA ,  MOHAMD BADARUDDIN SITI AISHAH ,  NGAH NOR AZHADI

IPC: G01N27/414 ,  H01L21/33

CPC classification number: G01N27/414

Abstract: A chemical sensor having an ion sensitive field effect transistor (ISFET) comprising a substrate (10) situated with a source (4) and a drain (3); an ion sensing gate (5) disposed between the source and the drain; an ion-sensitive film (1) formed on the surface of the substrate and the ion sensing gate; an electrode domain (6) formed on the ion-sensitive film surrounding the periphery of the ion sensing gate (5) characterized in that the electrode domain (6) is made of tungsten, titanium or tungsten suicide.

Abstract translation: 一种具有离子敏感场效应晶体管（ISFET）的化学传感器，所述离子敏感场效应晶体管包括与源极（4）和漏极（3）一起布置的衬底（10）; 设置在源极和漏极之间的离子感测栅极（5） 在衬底和离子传感门的表面上形成的离子敏感膜（1） 在围绕离子感测栅极（5）的外围的离子敏感膜上形成的电极区域（6），其特征在于，电极区域（6）由钨，钛或钨硅化物制成。