公开(公告)号：MY142676A

公开(公告)日：2010-12-15

申请号：MYPI20072005

申请日：2007-11-15

Applicant: MIMOS BERHAD

Inventor： ABDUL RANI ROZINA ,  LEE HING WAH ,  ABDULLAH ALI ZAINI ,  MAT HUSSIN MOHD ROFEI ,  ZAKARIA AZLAN ,  MOHD ZAIN AZLINA ,  MOHAMD BADARUDDIN SITI AISHAH ,  NGAH NOR AZHADI

IPC: G01N27/414

Abstract: AN MTEGRATED ION SENSITIVE FIELD EFFECT TRANSISTOR SENSOR 5 A CHEMICAL SENSOR HAVING AN ION SENSITIVE FIELD EFFECT TRANSISTOR (ISFET) COMPRISING A SUBSTRATE (10) SITUATED WITH A SOURCE (4) AND A DRAIN (3); AN ION SENSING GATE (5) DISPOSED BETWEEN THE SOURCE AND THE DRAIN; AN ION-SENSITIVE FILM (1) FORMED ON THE SURFACE OF THE SUBSTRATE AND THE ION SENSING GATE-, AN ELECTRODE DOMAIN (6) FORMED ON 10 THE ION-SENSITIVE FILM SURROUNDING THE PERIPHERY OF THE ION SENSING GATE (5) CHARACTERIZED IN THAT THE ELECTRODE DOMAIN (6) IS MADE OF TUNGSTEN, TITANIUM OR TUNGSTEN SILICIDE. (MOST ILLUSTRATED BY

公开(公告)号：WO2009064166A2

公开(公告)日：2009-05-22

申请号：PCT/MY2008000140

申请日：2008-11-14

Applicant: MIMOS BERHAD ,  ABDUL RANI ROZINA ,  LEE HING WAH ,  ABDULLAH ALI ZAINI ,  MAT HUSSIN MOHD ROFEI ,  ZAKARIA AZLAN ,  MOHD ZAIN AZLINA ,  MOHAMD BADARUDDIN SITI AISHAH ,  NGAH NOR AZHADI

Inventor： ABDUL RANI ROZINA ,  LEE HING WAH ,  ABDULLAH ALI ZAINI ,  MAT HUSSIN MOHD ROFEI ,  ZAKARIA AZLAN ,  MOHD ZAIN AZLINA ,  MOHAMD BADARUDDIN SITI AISHAH ,  NGAH NOR AZHADI

IPC: G01N27/414 ,  H01L21/33

CPC classification number: G01N27/414

Abstract: A chemical sensor having an ion sensitive field effect transistor (ISFET) comprising a substrate (10) situated with a source (4) and a drain (3); an ion sensing gate (5) disposed between the source and the drain; an ion-sensitive film (1) formed on the surface of the substrate and the ion sensing gate; an electrode domain (6) formed on the ion-sensitive film surrounding the periphery of the ion sensing gate (5) characterized in that the electrode domain (6) is made of tungsten, titanium or tungsten suicide.

Abstract translation: 一种具有离子敏感场效应晶体管（ISFET）的化学传感器，所述离子敏感场效应晶体管包括与源极（4）和漏极（3）一起布置的衬底（10）; 设置在源极和漏极之间的离子感测栅极（5） 在衬底和离子传感门的表面上形成的离子敏感膜（1） 在围绕离子感测栅极（5）的外围的离子敏感膜上形成的电极区域（6），其特征在于，电极区域（6）由钨，钛或钨硅化物制成。