公开(公告)号：MY180765A

公开(公告)日：2020-12-08

申请号：MYPI2012002621

申请日：2012-06-11

Applicant: MIMOS BERHAD

Inventor： ANIFAH ZAKARIA ,  MOHD HEZRI ABU BAKAR ,  FADZILAH ARIFIN ,  MOHD HILMY AZUAN HAMZAH

Abstract: A method of fabrication of an oxide layer at the bottom of a trench in a Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is provided. The method includes deposition of a pad oxide layer on a semiconductor substrate of the MOSFET (102); etching the pad oxide layer and the semiconductor substrate to form a trench in the semiconductor substrate(104); depositing a silicone oxide layer to fill the trench in the semiconductor substrate (108); etching the silicone oxide layer to remove the silicone oxide layer from a plurality of sidewalls of the trench (110); coating the semiconductor substrate and silicone oxide layer with a photoresist to protect them of etching (112); etching the photoresist and the silicone oxide layer until surface of the semiconductor substrate is reached (114); and removing the photoresist from inside the trench to obtain a thick bottom oxide (TBO) layer in the trench.