公开(公告)号：MY180765A

公开(公告)日：2020-12-08

申请号：MYPI2012002621

申请日：2012-06-11

Applicant: MIMOS BERHAD

Inventor： ANIFAH ZAKARIA ,  MOHD HEZRI ABU BAKAR ,  FADZILAH ARIFIN ,  MOHD HILMY AZUAN HAMZAH

Abstract: A method of fabrication of an oxide layer at the bottom of a trench in a Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is provided. The method includes deposition of a pad oxide layer on a semiconductor substrate of the MOSFET (102); etching the pad oxide layer and the semiconductor substrate to form a trench in the semiconductor substrate(104); depositing a silicone oxide layer to fill the trench in the semiconductor substrate (108); etching the silicone oxide layer to remove the silicone oxide layer from a plurality of sidewalls of the trench (110); coating the semiconductor substrate and silicone oxide layer with a photoresist to protect them of etching (112); etching the photoresist and the silicone oxide layer until surface of the semiconductor substrate is reached (114); and removing the photoresist from inside the trench to obtain a thick bottom oxide (TBO) layer in the trench.

公开(公告)号：MY177394A

公开(公告)日：2020-09-14

申请号：MYPI2010005625

申请日：2010-11-26

Applicant: MIMOS BERHAD

Inventor： MOHD HEZRI ABU BAKAR

Abstract: A novel semiconductor device (200) with less pattern distortion and novel processes for fabricating the same are disclosed. The novel method includes selecting a first substrate (211), forming a photo resist (212) above the first substrate (211) and selectively etching it to expose an opening to the first substrate (211). Dopant ions such as Arsenic are implanted on the first substrate (211), the said implanting step defining a buried layer profile (214) and implanting the ions on the substrate (211). The ions are activated in a thermal drive-in process, wherein the said activation process activates the ion and forms a thick silicon oxide layer (213) above the substrate (211) and buried layer profile (214). Excess upper portion of the silicon oxide layer (213) is removed. A second epitaxial layer (216) may be formed above the buried layer profile (214) and first substrate (211) and a wafer mark (217) etched on the second epitaxial layer (216).