公开(公告)号：MY163969A

公开(公告)日：2017-11-15

申请号：MYPI2013700830

申请日：2013-05-21

Applicant: MIMOS BERHAD

Inventor： MUHAMAD RAMDZAN BIN BUYONG ,  AZLINA BINTI MOHD ZAIN ,  KHAIRIL MAZWAN BIN MOHD ZAINI ,  SHARAIFAH KAMARIAH BINTI WAN SABLI ,  MOHD ROFEI BIN MAT HUSSIN

IPC: G01N27/414

Abstract: A METHOD OF FABRICATING ION-SENSITIVE FIELD-EFFECT TRANSISTOR (ISFET) DEVICE BY USING COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR (CMOS) COMPATIBLE IS PROVIDED, THE METHOD INCLUDES THE STEPS OF MARKING AND ETCHING A SILICON LAYER (101), DEPOSITING AN OXIDE LAYER (102), AS WELL AS IMPLANTING PATTERNS ON THE SILICON AND OXIDE LAYERS (101, 102), DEPOSITING A SILICON NITRIDE LAYER (104), SPUTTERING AND ETCHING METAL. THE MOST ILLUSTRATIVE DRAWING: