公开(公告)号：MY161431A

公开(公告)日：2017-04-14

申请号：MYPI2013003677

申请日：2013-10-07

Applicant: MIMOS BERHAD

Inventor： MAZLIN BIN MAN ,  MOHAMMAD FAIRUZ BIN AMIR ,  MUHAMAD RAMDZAN BUYONG ,  ZALIHA BINTI MOHAMAD ,  AZLINA BINTI MOHD ZAIN

IPC: C11D7/32 ,  C11D11/00 ,  H01L21/02 ,  H01L21/306 ,  H01L21/3213 ,  H01L21/60

Abstract: THE PRESENT INVENTION RELATES TO A METHOD FOR ELIMINATING ALUMINIUM SURFACE DEFECTS ON LARGE EXPOSED METAL COMPRISING: CONDUCTING A POST PAD ETCHING TREATMENT (100) ON THE METAL; COLD-RINSING THE METAL (200); AND DRYING THE METAL (300) USING NITROGEN; CHARACTERIZED IN THAT THE STEPS OF CONDUCTING A POST PAD ETCHING TREATMENT (100) ON THE METAL, COLD-RINSING THE METAL (200); AND DRYING THE METAL (300) USING NITROGEN INVOLVE CHEMICAL-FREE SOLVENT. THE PRESENT INVENTION IS ADVANTAGEOUS AS IT IS EFFECTIVE IN ELIMINATING THE WHITE HAZE EFFECT. THE ADVANTAGE OF USE OF DEIONIZED (DI) WATER ONLY CLEANING METHOD IS THAT IT IS MORE ENVIRONMENT-FRIENDLY. MOST ILLUSTRATIVE

公开(公告)号：MY173650A

公开(公告)日：2020-02-13

申请号：MYPI2010005362

申请日：2010-11-15

Applicant: MIMOS BERHAD

Inventor： MUHAMAD RAMDZAN BUYONG ,  SITI AISHAH MOHAMAD BADARUDDIN ,  RAHIMAH MOHD SAMAN ,  ABDUL GHANI OTHAMAN ,  DANIEL BIEN CHIA SHENG ,  AZLINA BINTI MOHD ZAIN ,  MOHSEN NABIPOOR

Abstract: The present invention relates to a sensor for determining humidity. A humidity sensor (30) comprises of a substrate (32); a bottom membrane (34) positioned above the substrate (32) and a top membrane (36) positioned above the bottom membrane (34) forming a dielectric layer (38); and a plurality of inter-digitated electrodes (40) with changing capacitance in accordance to change in humidity detected by the dielectric layer (38) embedded to the top membrane (36) wherein a plurality of trenches (42) are embedded to the bottom membrane (34) or to the substrate (32) thereby increasing area of exposure to humidity. The present invention also relates to a method for fabricating a humidity sensor.

公开(公告)号：MY163969A

公开(公告)日：2017-11-15

申请号：MYPI2013700830

申请日：2013-05-21

Applicant: MIMOS BERHAD

Inventor： MUHAMAD RAMDZAN BIN BUYONG ,  AZLINA BINTI MOHD ZAIN ,  KHAIRIL MAZWAN BIN MOHD ZAINI ,  SHARAIFAH KAMARIAH BINTI WAN SABLI ,  MOHD ROFEI BIN MAT HUSSIN

IPC: G01N27/414

Abstract: A METHOD OF FABRICATING ION-SENSITIVE FIELD-EFFECT TRANSISTOR (ISFET) DEVICE BY USING COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR (CMOS) COMPATIBLE IS PROVIDED, THE METHOD INCLUDES THE STEPS OF MARKING AND ETCHING A SILICON LAYER (101), DEPOSITING AN OXIDE LAYER (102), AS WELL AS IMPLANTING PATTERNS ON THE SILICON AND OXIDE LAYERS (101, 102), DEPOSITING A SILICON NITRIDE LAYER (104), SPUTTERING AND ETCHING METAL. THE MOST ILLUSTRATIVE DRAWING: