公开(公告)号：MY177552A

公开(公告)日：2020-09-18

申请号：MYPI2012701100

申请日：2012-12-07

Applicant: MIMOS BERHAD

Inventor： LEE HING WAH ,  DANIEL BIEN CHIA SHENG ,  TEH AUN SHIH ,  LEE WAI YEE ,  KHAIRUL ANUAR ABD WAHID

Abstract: A method of fabricating a resistive gas sensor device is provided, the method includes the steps of, depositing an insulating layer (105) on a silicon substrate layer (101) and depositing a conductive metal layer (103) onto the insulating layer (105), characterized in that, the method further includes the steps of depositing a thin metallic catalyst layer (107) covering a surface of the conductive metal layer (103) and etching the metal catalyst layer (107) and growing nanostructures (109) from the metal catalyst layer (107) that is exposed, such that the nanostructures (109) are interconnected with each other and the conductive metal layer (103).

公开(公告)号：MY164421A

公开(公告)日：2017-12-15

申请号：MYPI2012701094

申请日：2012-12-06

Applicant: MIMOS BERHAD

Inventor： DANIEL BIEN CHIA SHENG ,  TEH AUN SHIH ,  LEE WAI YEE ,  KHAIRUL ANUAR ABD WAHID

IPC: H01L21/36 ,  H01L21/02 ,  H01L21/20

Abstract: A METHOD OF PRODUCING VERTICAL NANOWIRES USING SINGLE CATALYST MATERIAL IS PROVIDED, THE METHOD INCLUDES THE STEPS OF DEPOSITING AN INSULATING OXIDE OR NITRIDE LAYER (101) ON A SUBSTRATE (105) SURFACE, DEPOSITING A GOLD CATALYST LAYER (103) ON TOP OF THE INSULATING OXIDE OR NITRIDE LAYER (101), ANNEALING THE SUBSTRATE (105) WITH GOLD CATALYST AT TEMPERATURE ABOVE 350°C, SUCH THAT NANOPARTICLES ARE OF DIAMETER IN RANGE OF 1 TO 100 NM, GROWING ZINC OXIDE NANOWIRES FROM EXPOSED GOLD CATALYST BY CHEMICAL VAPOUR DEPOSITION (CVD) WITH DIETHYLZINC AS A PRECURSOR, AND GROWING SILICON NANOWIRES (107) FROM REMAINING GOLD CATALYST NANOPARTICLES WITH SILICON AS PRECURSOR, SUCH THAT VERTICAL TYPE ZINC OXIDE NANOWIRES ARE PRODUCED AND LATERALLY CONNECTED BY SILICON NANOWIRES (107) WHEREIN THE INSULATING OXIDE OR NITRIDE LAYER (101) IS NOT REQUIRED WHEN THE SUBSTRATE (105) IS INSULATIVE MATERIAL. THE MOST ILLUSTRATIVE DRAWING: