公开(公告)号：MY178129A

公开(公告)日：2020-10-05

申请号：MYPI2010700079

申请日：2010-10-29

Applicant: MIMOS BERHAD

Inventor： DANIEL BIEN CHIA SHENG ,  RAHIMAH MOHD SAMAN ,  SITI AISHAH MOHAMAD BADARUDDIN ,  AZLINA MOHD ZAIN ,  MUHAMAD RAMDZAN BUYONG ,  MOHAMAD FAIRUZ AMIR

Abstract: The present invention provides an ISFET sensor device and a method to fabricate the ISFET sensor device with nanostructured membrane which will improve the sensitivity and efficiency of the device. The nanostructures can be in unlimited shape or design, in the form of nanowires, nanorings or nanoparticles, fabricated with the function to increase the sensor sensitivity by increasing the surface area of the membrane exposed to the sample solution or electrolyte. The nanostructured membrane can be formed either by nanofabrication techniques which includes lithographic patterning, pattern transfer, thin film deposition and etching methods or by spin coating of nanomaterials and nanowires using various materials, not limited to, such as, Si3N4 [32], polysilicon [34] and metallic nanowires.