HIGH DEGREE TREATMENT OF EXHAUST GAS

    公开(公告)号:JPS60125228A

    公开(公告)日:1985-07-04

    申请号:JP23058583

    申请日:1983-12-08

    Abstract: PURPOSE:To almost perfectly remove silane gas, by bringing exhaust gas of silane gas used in preparation of a semiconductor into contact with an alkaline substance-containing alcohol solution. CONSTITUTION:Alkaline substances such as NaOH, NH3, amines and weak inorg. acid salts or weak org. acid salts thereof are contained in an alcohol solution such as methanol or ethanol to prepare a treating solution. Exhaust gas containing silane gas used in the preparation of a semiconductor, especially, monosilane, disilane or trisilane is brought into gas-liquid contact with the treating solution. By this method, the silane gas in exhaust gas is removed to an extent of 0.5ppm, furhter, 0.1ppm or less.

    HIGH DEGREE TREATMENT OF EXHAUST GAS

    公开(公告)号:JPS60125233A

    公开(公告)日:1985-07-04

    申请号:JP23058783

    申请日:1983-12-08

    Abstract: PURPOSE:To almost perfectly remove silane gas in exhaust gas, by allowing the silane gas in the exhaust gas of a semiconductor preparing apparatus to pass a packed bed based on solid metal oxide to treat the same. CONSTITUTION:A quartz tube 1 is packed with solid metal oxide particles to form a packed bed 2. The part of the packed bed 2 is heated within a range of a room temp. -800 deg.C by an electric furnace 3. Silane gas is diluted with nitrogen gas while the diluted silane gas with predetermined concn. is stored in a gas reservoir 4 and subsequently passed through the packed bed 2 through a flow meter 5, a needle valve 6 and pump 7. The treated gas 8 from the outlet of the packing layer 2 is collected and the concn. of silane gas therein is analyzed. The concn. thereof is reduced at least to 0.5ppm or less, pref., 0.1ppm or less. In order to regenerate or exchange the packing material, a plurality parallel sytem is pref. employed.

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