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    1.
    发明专利
    未知

    公开(公告)号：DE69008382D1

    公开(公告)日：1994-06-01

    申请号：DE69008382

    申请日：1990-02-14

    Applicant: MITSUI TOATSU CHEMICALS

    Inventor： ITOH MASAYOSHI ,  IWATA KENJI ,  YANAGAWA NORIYUKI ,  UTSUMI TETSURA ,  KOBAYASHI MINEO ,  TAKEUCHI RYO ,  ABE TOMOHIRO

    IPC: C07F7/08

    Abstract: A process for preparing an organic silicon compound is here disclosed which comprises the step of reacting a halogenated hydrocarbon selected from the group consisting of wherein each of X to X is selected from the group consisting of hydrogen, an alkyl group, alkenyl group, phenyl group, naphthyl group, alkoxy group, acyl group, alkylamino group and dialkylamino group having 1 to 20 carbon atoms which are unsubstituted or substituted and a halogen atom; and each of at least one of X to X , at least one of X to X and at least one of X to X is a halogen atom, with a silane selected from the group consisting of SiH4, Si2H6 and Si3H8.

    2.
    发明专利
    未知

    公开(公告)号：DE69008382T2

    公开(公告)日：1994-08-18

    申请号：DE69008382

    申请日：1990-02-14

    Applicant: MITSUI TOATSU CHEMICALS

    Inventor： ITOH MASAYOSHI ,  IWATA KENJI ,  YANAGAWA NORIYUKI ,  UTSUMI TETSURA ,  KOBAYASHI MINEO ,  TAKEUCHI RYO ,  ABE TOMOHIRO

    IPC: C07F7/08

    Abstract: A process for preparing an organic silicon compound is here disclosed which comprises the step of reacting a halogenated hydrocarbon selected from the group consisting of wherein each of X to X is selected from the group consisting of hydrogen, an alkyl group, alkenyl group, phenyl group, naphthyl group, alkoxy group, acyl group, alkylamino group and dialkylamino group having 1 to 20 carbon atoms which are unsubstituted or substituted and a halogen atom; and each of at least one of X to X , at least one of X to X and at least one of X to X is a halogen atom, with a silane selected from the group consisting of SiH4, Si2H6 and Si3H8.

    PROCESS FOR PREPARING ORGANIC SILICON COMPOUND
    5.
    发明专利
    PROCESS FOR PREPARING ORGANIC SILICON COMPOUND 未知

    公开(公告)号：CA2009940A1

    公开(公告)日：1990-08-14

    申请号：CA2009940

    申请日：1990-02-13

    Applicant: MITSUI TOATSU CHEMICALS

    Inventor： ITOH MASAYOSHI ,  IWATA KENJI ,  YANAGAWA NORIYUKI ,  UTSUMI TETSURA ,  KOBAYASHI MINEO ,  TAKEUCHI RYO ,  ABE TOMOHIRO

    IPC: C07F7/08

    Abstract: A process for preparing an organic silicon compound is here disclosed which comprises the step of reacting a halogenated hydrocarbon selected from the group consisting of , and wherein each of X1 to X16 is selected from the group consisting of hydrogen, an alkyl group, alkenyl group, phenyl group, naphthyl group, alkoxy group, acyl group, alkylamino group and dialkylamino group having 1 to 20 carbon atoms which are unsubstituted or substituted and a halogen atom; and each of at least one of X1 to X4, at least one of X8 to X10 and at least one of X11 to X16 is a halogen atom, with a silane selected from the group consisting of SiH4, Si2H6 and Si3H8.

    AMORPHOUS PHOTOELECTRIC CONVERSION DEVICE
    7.
    发明专利
    AMORPHOUS PHOTOELECTRIC CONVERSION DEVICE 失效

    公开(公告)号：JPH07183550A

    公开(公告)日：1995-07-21

    申请号：JP32374793

    申请日：1993-12-22

    Applicant: MITSUI TOATSU CHEMICALS

    Inventor： ASHIDA YOSHINORI ,  TANAKA HIROBUMI ,  MIYASHITA TAKEHIRO ,  YANAGAWA NORIYUKI ,  ISHIGURO NOBUYUKI ,  SAITO KIMIHIKO

    IPC: H01L31/04

    Abstract: PURPOSE:To enhance an amorphous photoelectric conversion device in conversion efficiency, especially fill factor, and open and voltage by a method wherein a first and a second substantially intrinsic semiconductor thin film are formed of amorphous silicon hydride. CONSTITUTION:An amorphous semiconductor solar cell structure is basically formed of a blue glass plate on which tin oxide is deposited. That is, a glass plate/tin oxide is made to serve as a substrate 110, and a P-type semiconductor layer 112, an I-type semiconductor layer 113, an N-type semiconductor layer 114, a P-type semiconductor layer 115, an I-type semiconductor layer 116, and an N-type semiconductor layer 117 are successively laminated. It is preferable for a second electrode layer 111 that a substantially intrinsic semiconductor thin film on which sunlight is incident contains 15 to 50atom% of combined hydrogen, also it is preferable that a second substantially intrinsic semiconductor thin film contains 0.5 to 15atom% of combined hydrogen, and a first and a second semiconductor layer, a first and a second N-type semiconductor layer, and a first and a second electrode are so arranged as to conform to the above constitution.

    PRODUCTION OF TRICHLOROSILANE
    8.
    发明专利
    PRODUCTION OF TRICHLOROSILANE 失效

    公开(公告)号：JPH01313318A

    公开(公告)日：1989-12-18

    申请号：JP14167888

    申请日：1988-06-10

    Applicant: MITSUI TOATSU CHEMICALS

    Inventor： INOUE KAORU ,  MIYAGAWA HIROJI ,  YANAGAWA NORIYUKI ,  ABE TAKAHARU ,  ITO MASAYOSHI

    IPC: C01B33/107

    Abstract: PURPOSE:To obtain trichlorosilane smoothly and effectively even at a reaction temp. in a low temp. range so low as about 300 deg.C by carrying out a heterogeneous phase reaction between liquid or gaseous SiCl4 and Si with H2 in the presence of Cu(compd.), a molten salt of aluminium halide, and NiCl2. CONSTITUTION:A heterogeneous phase reaction of SiCl4 and Si with H2 is carried out in a reaction system of gas-liquid-solid or gas-solid in the presence of a catalyst described hereunder(refer to the formula). The catalyst to be used is Cu and/or Cu compd., a molten salt of aluminium halide, and NiCl2. As the result, trichlorosilane is obtd. extremely efficiently even at a reaction temp. in a low temp. range so low as about 300 deg.C. Suitable molten salt of AlCl3 is pref. a molten salt of AlCl3 with NaCl. Since volatilization of the catalyst component can be prevented by the above-described method, the reaction is proceeded stationarity with high efficiency.

    PURIFICATION OF SILICON HYDRIDE
    10.
    发明专利
    PURIFICATION OF SILICON HYDRIDE 失效

    公开(公告)号：JPS62212217A

    公开(公告)日：1987-09-18

    申请号：JP5266686

    申请日：1986-03-12

    Applicant: MITSUI TOATSU CHEMICALS

    Inventor： ITO MASAYOSHI ,  MIYAGAWA HIROJI ,  ABE TOSHIHIRO ,  IKEDA KEIICHI ,  MURAKAMI MASAMI ,  YANAGAWA NORIYUKI

    IPC: C01B33/04

    Abstract: PURPOSE:To purify silicon hydride having improved adsorptivity, by treating silicon hydride with a zeolite adsorbent, containing PH3 and having specific component constitution. CONSTITUTION:Silicon hydride in a vapor phase state, containing PH3 and expressed by the formula (n is 1-4) is treated with a zeolite adsorbent, containing SiO2 and Al2O3 in constituent components at >=5 molar ratio (SiO2/ Al2O3) of SiO2 to Al2O3, e.g. synthetic (artificial) mordenite type structure of chemical composition expressed by formula II, etc., at -80-+30 deg.C under pressure, etc.

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