公开(公告)号：JP2000049229A

公开(公告)日：2000-02-18

申请号：JP20555399

申请日：1999-07-21

Applicant: MOTOROLA INC

Inventor： GREGOR BRACKELMAN ,  RAMUNAS BENKATORAMAN ,  MATTHEW THOMAS HERICK ,  CINDY R SIMPSON ,  FIORDALICE ROBERT W ,  DENNING DEAN J ,  JAIN AJAY ,  CHRISTIANO CAPASO

IPC: H01L23/522 ,  H01L21/3205 ,  H01L21/60 ,  H01L21/768 ,  H01L21/82 ,  H01L23/485 ,  H01L23/52 ,  H01L23/532

Abstract: PROBLEM TO BE SOLVED: To provide a mutual connection structure in a semiconductor device that has advantages as compared with prior art and the method for forming the same. SOLUTION: A mutual connection part 60 is formed on a substrate 10. In an embodiment, an adhesive/barrier layer 81, a copper alloy seed layer 42 and a copper film 43 are deposited on the substrate 10, and the substrate 10 is annealed. In an alternative embodiment, the copper film is deposited on the substrate and the copper film is annealed. Furthermore, in another embodiment, the adhesive/barrier layer 81, a seed layer 82, a conductive film 83 and a copper alloy capping film 84 are deposited on the substrate 10 to form a mutually connecting part 92. The stages of depositing and annealing are performed on a common processing platform.

公开(公告)号：JPH11330246A

公开(公告)日：1999-11-30

申请号：JP9740099

申请日：1999-04-05

Applicant: MOTOROLA INC

Inventor： RABIURU ISURAM ,  ABGELINOS V GERATOS ,  KEVIN LUCAS ,  FILIPIAK STANLEY M ,  RAMUNAS BENKATORAMAN

IPC: H01L21/3205 ,  H01L21/768 ,  H01L23/52

Abstract: PROBLEM TO BE SOLVED: To provide a mutual interconnection of copper and a method of manufacturing which are capable of reliability enhancement in a semiconductor device, by exposing a mutual copper interconnection member to hydrogen- containing plasma, forming copper oxide from outside, and inhibiting oxidization a clarified copper layer again before forming a copper barrier layer on the surface. SOLUTION: A mutual copper interconnection member 39 is formed in an opening for mutual interconnection after removing a second copper layer, a first copper layer and a conductive barrier layer. A copper barrier layer 40 consisting of silicon and nitrogen is formed on the mutual copper interconnection member 39. The mutual copper interconnection member 39 is exposed to hydrogen-containing silicon-free plasma. Copper oxide is removed from an exposed part of the mutual copper interconnection member 39. The processed substrate is cleaned in the same chamber as that of the copper barrier layer, so that the cleaned copper surface is not exposed again before the deposition and is not oxidized again. With these manufacturing steps, reliability of the semiconductor device is enhanced.