公开(公告)号：DE3886291D1

公开(公告)日：1994-01-27

申请号：DE3886291

申请日：1988-06-16

Applicant: MOTOROLA INC

Inventor： KOURY DANIEL N

IPC: H01L21/20 ,  H01L21/02 ,  H01L21/331 ,  H01L21/336 ,  H01L21/762 ,  H01L21/84 ,  H01L27/12 ,  H01L29/73 ,  H01L29/732 ,  H01L29/78 ,  H01L29/786

Abstract: A process for making an inverted silicon-on-insulator semiconductor device having a pedestal structure. After the processing of polysilicon layers (14, 18), dielectric layers (12, 16, 20, 26), an epitaxial region (24) and a nitride layer (28), a second substrate (30) is bonded to the nitride layer (28) and the first substrate (10) is removed. This allows for an epitaxial region (24) which is isolated from the substrate (30).

公开(公告)号：DE69306687T2

公开(公告)日：1997-06-12

申请号：DE69306687

申请日：1993-06-01

Applicant: MOTOROLA INC

Inventor： BENNET PAUL T ,  MIETUS DAVID F ,  GUTTERIDGE RONALD J ,  RISTIC LJUBISA ,  KOURY DANIEL N

IPC: G01P15/08 ,  G01P15/125 ,  H01L29/84

公开(公告)号：HK1004293A1

公开(公告)日：1998-11-20

申请号：HK98102985

申请日：1998-04-09

Applicant: MOTOROLA INC

Inventor： BENNET PAUL T ,  MIETUS DAVID F ,  GUTTERIDGE RONALD J ,  RISTIC LJUBISA ,  KOURY DANIEL N

IPC: G01P15/08 ,  G01P15/125 ,  H01L29/84 ,  G01P

公开(公告)号：DE69306687D1

公开(公告)日：1997-01-30

申请号：DE69306687

申请日：1993-06-01

Applicant: MOTOROLA INC

Inventor： BENNET PAUL T ,  MIETUS DAVID F ,  GUTTERIDGE RONALD J ,  RISTIC LJUBISA ,  KOURY DANIEL N

IPC: G01P15/08 ,  G01P15/125 ,  H01L29/84