公开(公告)号：DE69524539D1

公开(公告)日：2002-01-24

申请号：DE69524539

申请日：1995-10-23

Applicant: MOTOROLA INC

Inventor： RISTIC LJUBISA ,  KOURY DANIEL ,  SCHMIESING JOHN E ,  GUTTERIDGE RONALD J ,  HUGHES HENRY G

IPC: G01D5/24 ,  G01P1/02 ,  G01P15/08 ,  G01P15/125 ,  H01L23/06 ,  G01D3/028

Abstract: An enclosure (8) for an electronic device (26) such as, for example, an accelerometer. The enclosure (8) includes a conductive semiconductor substrate (12) underlying the electronic device (26), a conductive cap (16) overlying the electronic device (26), and a power supply (25) having one or more outputs (27,29) each with a substantially fixed potential wherein one output is electrically coupled to the conductive semiconductor substrate (12) and another output to the conductive cap (16). In a preferred embodiment, substrate (12) and cap (16) are coupled to the same power supply output (27). This coupling substantially eliminates the adverse effects of parasitic capacitances of the substrate (12) and cap (16) to reduce measurement error and EMI when a capacitive accelerometer is used as the electronic device (26).

公开(公告)号：DE69313031T2

公开(公告)日：1998-02-05

申请号：DE69313031

申请日：1993-05-10

Applicant: MOTOROLA INC

Inventor： ADDIE DAVID L ,  GUTTERIDGE RONALD J ,  RISTIC LJUBISA

IPC: B81B3/00 ,  G01L1/14 ,  G01L9/00 ,  G01L9/12 ,  G01P15/08 ,  G01P15/125 ,  H01L29/84

Abstract: A double pinned micromachined sensor (11) which utilizes a laminated film (27) having overall tensile strength formed on top of a silicon substrate (16). The laminated film (27) comprises a layer of silicon nitride (18) encapsulated by two layers of polysilicon (19,21), the silicon nitride (18) providing overall tension for the laminated film. The laminated film (27) is supported above the silicon substrate by support posts (17) and is selectively etched to form a sensor (11,13).

公开(公告)号：CZ202192A3

公开(公告)日：1993-02-17

申请号：CS202192

申请日：1992-06-29

Applicant: MOTOROLA INC

Inventor： RISTIC LJUBISA ,  DUNN WILLIAM C

IPC: G01D5/24 ,  G01D5/241 ,  G01P15/00 ,  H01L21/02 ,  H01L21/311 ,  H01L21/822 ,  H01L27/04 ,  H01L29/84 ,  H01L29/92 ,  H01L45/00

Abstract: A differential capacitor structure (10,74) includes a first static conductive layer (18,76) and a second static conductive layer (28,86) not electrically coupled to the first static conductive layer (18,76). A dynamic conductive layer (24,80) is suspended between the first (18,76) and second (28,86) static conductive layers.

公开(公告)号：CZ283247B6

公开(公告)日：1998-02-18

申请号：CS202192

申请日：1992-06-29

Applicant: MOTOROLA INC

Inventor： RISTIC LJUBISA ,  DUNN WILLIAM C

IPC: G01D5/24 ,  G01D5/241 ,  G01P15/00 ,  H01L21/02 ,  H01L21/311 ,  H01L21/822 ,  H01L27/04 ,  H01L29/84 ,  H01L29/92 ,  H01L45/00

Abstract: A differential capacitor structure (10,74) includes a first static conductive layer (18,76) and a second static conductive layer (28,86) not electrically coupled to the first static conductive layer (18,76). A dynamic conductive layer (24,80) is suspended between the first (18,76) and second (28,86) static conductive layers.

公开(公告)号：DE69206770D1

公开(公告)日：1996-01-25

申请号：DE69206770

申请日：1992-09-28

Applicant: MOTOROLA INC

Inventor： RISTIC LJUBISA ,  CALAWAY MICHAEL F ,  GUTTERIDGE RONALD J ,  DUNN WILLIAM C ,  KOUCHENG WU

IPC: B81B3/00 ,  G01P15/125 ,  G01P15/18

公开(公告)号：CZ9202021A3

公开(公告)日：1993-02-17

申请号：CS202192

申请日：1992-06-29

Applicant: MOTOROLA INC

Inventor： RISTIC LJUBISA ,  DUNN WILLIAM C

IPC: G01D5/24 ,  G01D5/241 ,  G01P15/00 ,  H01L21/02 ,  H01L21/311 ,  H01L21/822 ,  H01L27/04 ,  H01L29/84 ,  H01L29/92 ,  H01L45/00

CPC classification number: H01L28/40 ,  G01D5/2417 ,  G01P2015/0828

公开(公告)号：DE69624645T2

公开(公告)日：2003-04-24

申请号：DE69624645

申请日：1996-08-30

Applicant: MOTOROLA INC

Inventor： RISTIC LJUBISA ,  SHEMANSKY JR

IPC: G01L9/04 ,  G01L9/00 ,  G01P15/08 ,  G01P15/125 ,  H01L21/822 ,  H01L29/84 ,  H01L27/20

Abstract: Mfr. of a monolithic semiconductor device with an integrated surface micromachined structure comprises forming at least one conductive microstructure (32) sealed within a sensor area (30) on a semiconductor substrate (10). At least one semiconductor device, including doped regions (42), is then formed within the IC area (40). A thermal anneal is performed, the conductive microstructure is unsealed and suspended and coupled to the semiconductor device. Also claimed is a method as above including forming a micromachined sensor structure comprising forming an interconnection and a sacrificial layer on the substrate, patterning to form IC and sensor regions and forming a structural layer coupled to the interconnection layer through an anchor opening. The structural layer is patterned to form a sensor element, a second sacrificial layer formed, a sealing layer formed over the sensor area and semiconductor devices formed in the IC area. A rapid thermal anneal is carried out, a passivation layer formed over the IC area, the sealing and sacrificial layers removed to suspend the sensor and the device and sensor coupled electrically.

公开(公告)号：DE69306687T2

公开(公告)日：1997-06-12

申请号：DE69306687

申请日：1993-06-01

Applicant: MOTOROLA INC

Inventor： BENNET PAUL T ,  MIETUS DAVID F ,  GUTTERIDGE RONALD J ,  RISTIC LJUBISA ,  KOURY DANIEL N

IPC: G01P15/08 ,  G01P15/125 ,  H01L29/84

公开(公告)号：SK202192A3

公开(公告)日：1995-03-08

申请号：SK202192

申请日：1992-06-29

Applicant: MOTOROLA INC

Inventor： RISTIC LJUBISA ,  DUNN WILLIAM C

IPC: G01D5/24 ,  G01D5/241 ,  G01P15/00 ,  H01L21/02 ,  H01L21/311 ,  H01L21/822 ,  H01L27/04 ,  H01L29/84 ,  H01L29/92 ,  H01L45/00 ,  H01L29/96

Abstract: A differential capacitor structure includes a first static conductive layer (18) and a second static conductive layer (28) not electrically coupled to the first static conductive layer (18). A dynamic conductive layer (24) is suspended between the first (18) and second (28) static conductive layers. A method comprises the steps of: providing a substrate (12); forming a first static conductive layer (18) on said substrate (12); forming a first sacrificial layer (22) on said first conductive layer (18); forming a dynamic conductive layer (24) on said first sacrificial layer (22); forming a second sacrificial layer (26) on said dynamic layer (24); forming a second static conductive layer (28) on said second sacrificial layer (26); and selectively removing said sacrificial layers (22, 26).

公开(公告)号：DE69524539T2

公开(公告)日：2002-07-04

申请号：DE69524539

申请日：1995-10-23

Applicant: MOTOROLA INC

Inventor： RISTIC LJUBISA ,  KOURY DANIEL ,  SCHMIESING JOHN E ,  GUTTERIDGE RONALD J ,  HUGHES HENRY G

IPC: G01D5/24 ,  G01P1/02 ,  G01P15/08 ,  G01P15/125 ,  H01L23/06 ,  G01D3/028

Abstract: An enclosure (8) for an electronic device (26) such as, for example, an accelerometer. The enclosure (8) includes a conductive semiconductor substrate (12) underlying the electronic device (26), a conductive cap (16) overlying the electronic device (26), and a power supply (25) having one or more outputs (27,29) each with a substantially fixed potential wherein one output is electrically coupled to the conductive semiconductor substrate (12) and another output to the conductive cap (16). In a preferred embodiment, substrate (12) and cap (16) are coupled to the same power supply output (27). This coupling substantially eliminates the adverse effects of parasitic capacitances of the substrate (12) and cap (16) to reduce measurement error and EMI when a capacitive accelerometer is used as the electronic device (26).