公开(公告)号：WO0209203A2

公开(公告)日：2002-01-31

申请号：PCT/US0122676

申请日：2001-07-19

Applicant: MOTOROLA INC

Inventor： RAMESH RAMAMOORTHY ,  WANG YU ,  FINDER JEFFREY M ,  EISENBEISER KURT ,  YU ZHIYI ,  DROOPAD RAVINDRANATH

IPC: H01L41/08 ,  B32B9/00 ,  H01L21/02 ,  H01L21/316 ,  H01L21/8246 ,  H01L27/105 ,  H01L41/18 ,  H01L41/187 ,  H01L41/22 ,  H01L41/00

CPC classification number: B32B9/00 ,  H01L21/31691 ,  H01L28/56 ,  H01L41/0478 ,  H01L41/0815 ,  H01L41/1876 ,  H01L41/319

Abstract: A high quality epitaxial layer (110) of monocrystalline Pb(Zr, Ti)O3 can be grown overlying large silicon wafers by first growing a barium strontium titanate layer (104) on a silicon wafer. The barium strontium titanate layer (104) is a monocrystalline layer spaced apart from the silicon wafer by an amorphous interface layer (116) of silicon oxide. Monocrystalline conductive layers (106, 108) of La, Sr) Co03 are formed adjacent the Pb(Zr, Tr)03 layer.

Abstract translation: 通过首先在硅晶片上生长钛酸钡锶层（104），可以在大硅晶片上生长单晶Pb（Zr，Ti）O 3的高质量外延层（110）。 钛酸锶钡层（104）是通过氧化硅的非晶界面层（116）与硅晶片隔开的单晶层。 La，Sr）CoO 3的单晶导电层（106,108）邻近Pb（Zr，Tr）O 3层形成。

公开(公告)号：WO03010834A3

公开(公告)日：2003-07-24

申请号：PCT/US0220214

申请日：2002-06-26

Applicant: MOTOROLA INC

Inventor： RAMESH RAMAMOORTHY ,  WANG YU ,  FINDER JEFFREY M ,  YU ZHIYI ,  DROOPAD RAVINDRANATH ,  EISENBEISER KURT

IPC: H01L41/08 ,  B32B9/00 ,  H01L21/02 ,  H01L21/316 ,  H01L21/8246 ,  H01L27/105 ,  H01L41/18 ,  H01L41/187 ,  H01L41/22 ,  H01L27/115

CPC classification number: H01L21/31691 ,  B32B9/00 ,  H01L28/56 ,  H01L41/0478 ,  H01L41/1875 ,  H01L41/1876 ,  H01L41/29 ,  H01L41/319 ,  Y10T428/24917

Abstract: A high quality epitaxial layer of monocrystalline Pb(Zr,Ti)O3 (110) can be grown overlying large silicon wafers by first growing an strontium titanate layer (104) on a silicon wafer (102). The strontium titanate layer is a monocrystalline layer spaced apart from the silicon wafer by an amorphous interface layer (116) of silicon oxide. Monocrystalline conductive layers of (La,Sr)CoO3 (106, 108) are formed adjacent the active layer (110) thus constituting piezoelectric devices or ferroelectric memory elements.

Abstract translation: 通过首先在硅晶片（102）上生长钛酸锶层（104），可以将单晶Pb（Zr，Ti）O 3（110）的高质量外延层生长在大的硅晶片上。 钛酸锶层是通过氧化硅的非晶界面层（116）与硅晶片隔开的单晶层。 （La，Sr）CoO 3（106,108）的单晶导体层与有源层（110）相邻形成，从而构成压电器件或铁电存储元件。

公开(公告)号：AU7698701A

公开(公告)日：2002-02-05

申请号：AU7698701

申请日：2001-07-19

Applicant: MOTOROLA INC

Inventor： RAMESH RAMAMOORTHY ,  WANG YU ,  FINDER JEFFREY M ,  EISENBEISER KURT ,  YU ZHIYI ,  DROOPAD RAVINDRANATH

IPC: H01L41/08 ,  B32B9/00 ,  H01L21/02 ,  H01L21/316 ,  H01L21/8246 ,  H01L27/105 ,  H01L41/18 ,  H01L41/187 ,  H01L41/22 ,  H01L41/00

Abstract: A high quality epitaxial layer of monocrystalline Pb(Zr,Ti)O3 can be grown overlying large silicon wafers by first growing an strontium titanate layer on a silicon wafer. The strontium titanate layer is a monocrystalline layer spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide.