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    Semiconductor structure including a partially annealed layer
    1.
    发明专利
    Semiconductor structure including a partially annealed layer 未知

    公开(公告)号：AU8885001A

    公开(公告)日：2002-04-15

    申请号：AU8885001

    申请日：2001-09-07

    Applicant: MOTOROLA INC

    Inventor： EISENBEISER KURT ,  FOLEY BARBARA M ,  FINDER JEFFREY M ,  THOMPSON DANNY L

    IPC: H01L21/20 ,  H01L21/203 ,  H01L21/205

    Abstract: High quality epitaxial layers of compound semiconductor materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline compound semiconductor layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. To further relieve strain in the accommodating buffer layer, at least a portion of the accommodating buffer layer is exposed to a laser anneal process to cause the accommodating buffer layer to become amorphous, providing a true compliant substrate for subsequent layer growth.

    Pyroelectric device on a monocrystalline semiconductor substrate
    2.
    发明专利
    Pyroelectric device on a monocrystalline semiconductor substrate 未知

    公开(公告)号：AU2703002A

    公开(公告)日：2002-06-18

    申请号：AU2703002

    申请日：2001-11-29

    Applicant: MOTOROLA INC

    Inventor： OOMS WILLIAM J ,  FINDER JEFFREY M ,  EISENBEISER KURT W ,  HALLMARK JERALD A

    IPC: C30B23/02 ,  C30B25/02 ,  C30B25/18 ,  H01L21/20 ,  H01L27/16 ,  H01L37/02 ,  H01L21/00

    Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer (104) on a silicon wafer (102). The accommodating buffer layer (104) is a layer of monocrystalline material spaced apart from the silicon wafer (102) by an amorphous interface layer (108) of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline accommodating buffer layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. Utilizing this technique permits the fabrication of thin film pyroelectric devices (150) on a monocrystalline silicon substrate.

    Quantum well infrared photodetector
    7.
    发明专利
    Quantum well infrared photodetector 未知

    公开(公告)号：AU3046002A

    公开(公告)日：2002-06-18

    申请号：AU3046002

    申请日：2001-11-19

    Applicant: MOTOROLA INC

    Inventor： FINDER JEFFREY M ,  OOMS WILLIAM J

    IPC: H01L21/20 ,  H01L21/316 ,  H01L31/0352 ,  H01L31/0368 ,  H01L31/101 ,  H01L31/00

    Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer (204) on a silicon wafer (202). The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer (206) of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials. Quantum well infrared photodetectors (200) can be grown on the high quality epitaxial monocrystalline material formed on such compliant substrates to create highly reliable devices having reduced costs.

    Non-volatile memory element on a monocrystalline semiconductor substrate
    10.
    发明专利
    Non-volatile memory element on a monocrystalline semiconductor substrate 未知

    公开(公告)号：AU7355301A

    公开(公告)日：2002-02-05

    申请号：AU7355301

    申请日：2001-07-18

    Applicant: MOTOROLA INC

    Inventor： FINDER JEFFREY M ,  EISENBEISER KURT ,  HALLMARK JERALD A

    IPC: H01L21/02 ,  H01L21/316 ,  H01L21/336 ,  H01L29/24 ,  H01L29/78 ,  H01L21/8246 ,  H01L27/115

    Abstract: High quality epitaxial layers (26) of compound semiconductor materials can be grown overlying large silicon wafers (22) by first growing an accommodating buffer layer (24) on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer (28) of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. Utilizing this technique permits (20) the fabrication of thin film non-volatile memory elements on a monocrystalline silicon substrate.

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