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    FORMING METHOD OF SEMICONDUCTOR STRUCTURE HAVING STABLE CRYSTALLINE INTERFACE ON SILICON SUBSTRATE
    2.
    发明专利
    FORMING METHOD OF SEMICONDUCTOR STRUCTURE HAVING STABLE CRYSTALLINE INTERFACE ON SILICON SUBSTRATE 失效

    公开(公告)号：JP2001223211A

    公开(公告)日：2001-08-17

    申请号：JP2000375552

    申请日：2000-12-11

    Applicant: MOTOROLA INC

    Inventor： YU ZHIYI ,  WANG JUN ,  DROOPAD RAVINDRANATH ,  RAMDANI JAMAL

    IPC: H01L21/20 ,  C30B23/02 ,  H01L21/02 ,  H01L21/314 ,  H01L21/316 ,  H01L21/318 ,  H01L21/8246 ,  H01L27/105

    Abstract: PROBLEM TO BE SOLVED: To provide a method for forming a thin and stable crystalline interface on a silicon substrate. SOLUTION: The forming method of a semiconductor structure is constituted of a stage that a silicon substrate 10 having the surface 12 is provided, a stage that an interface 14 consisting of a single silicon atomic layer, a single nitrogen atomic layer and a single metal atomic layer is formed on the surface of the substrate 10 and a stage that more than one layer of single crystal oxide layers 26 are formed on the interface. The interface consists of a silicon atomic layer, a nitrogen atomic layer and a metal atomic layer in the form of an MSiN2. Provided that, the M is a metal. In a second embodiment, the interface consists of an atomic layer containing the mixture of a silicon with a metal and the mixture of nitrogen with oxygen in the form of an MSi[N1-xOx]2. Provided that, the M is a metal and the (x) is used on the condition of 0

    PREPARATION OF SEMICONDUCTOR STRUCTURE HAVING METALLIC OXIDE INTERFACE WITH SILICON
    6.
    发明专利
    PREPARATION OF SEMICONDUCTOR STRUCTURE HAVING METALLIC OXIDE INTERFACE WITH SILICON 失效

    公开(公告)号：JP2001068467A

    公开(公告)日：2001-03-16

    申请号：JP2000213906

    申请日：2000-07-14

    Applicant: MOTOROLA INC

    Inventor： RAMDANI JAMAL ,  DROOPAD RAVINDRANATH ,  YU ZHIYI

    IPC: C30B29/32 ,  H01L21/02 ,  H01L21/316

    Abstract: PROBLEM TO BE SOLVED: To provide a thin and stable crystalline silicate interface with silicon by forming a seed layer formed of a silicate crystalline material on the surface of a silicon substrate and forming a high dielectric oxide layer on the seed layer. SOLUTION: A substrate 10 is heated properly and the surface of the substrate 10 having SiO layer thereon is exposed to a metallic beam 18 such as Sr, Ba, Ca, Zr, Hf inside oxygen atmosphere at O2 pressure of 1×10-4 mBar or less, amorphous oxide is formed to SiO2 oxide, the substrate 10 and an SiO2 layer are exposed to Sr and oxygen beam O2 and SrO is combined with SiO2 and changes an SiO2 layer to a crystalline seed layer 20 formed of SrSiO4 or SrSiO3, etc. Then, a high dielectric oxide layer 22 is formed by supplying crystalline silicate simultaneously or alternately under the conditions of 350 to 650 deg.C and O2 partial pressure of 1×10-4 mBar or less to a surface 21 of the seed layer 20.

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