公开(公告)号：AU2003247863A1

公开(公告)日：2004-02-16

申请号：AU2003247863

申请日：2003-07-11

Applicant: MOTOROLA INC

Inventor： MANCINI DAVID P ,  DAUKSHER WILLIAM J ,  NORDQUIST KEVIN J ,  RESNICK DOUGLAS J

IPC: G03F7/20 ,  B29C59/16 ,  B41C20060101 ,  G03F1/60 ,  G03F7/00 ,  G03F7/16 ,  G21K5/00 ,  H01L21/027 ,  H01L21/3205 ,  H01L21/4763 ,  H05B6/00

Abstract: This invention relates to semiconductor devices, microelectronic devices, micro electro mechanical devices, microfluidic devices, and more particularly to an improved lithographic template including a repaired defect, a method of fabricating the improved lithographic template, a method for repairing defects present in the template, and a method for making semiconductor devices with the improved lithographic template. The lithographic template ( 10 ) is formed having a relief structure ( 26 ) and a repaired gap defect ( 36 ) within the relief structure ( 26 ). The template ( 10 ) is used in the fabrication of a semiconductor device ( 40 ) for affecting a pattern in device ( 40 ) by positioning the template ( 10 ) in close proximity to semiconductor device ( 40 ) having a radiation sensitive material formed thereon and applying a pressure to cause the radiation sensitive material to flow into the relief structure present on the template. Radiation is then applied through the template so as to further cure portions of the radiation sensitive material and further define the pattern in the radiation sensitive material. The template ( 10 ) is then removed to complete fabrication of semiconductor device ( 40 ).

公开(公告)号：AU2002359600A1

公开(公告)日：2003-06-30

申请号：AU2002359600

申请日：2002-12-05

Applicant: MOTOROLA INC

Inventor： WILLSON CARLTON GRANT ,  MANCINI DAVID P ,  RESNICK DOUGLAS J

IPC: G03F7/00 ,  G03F7/09

Abstract: This invention relates to a lithographic template, a method of forming the lithographic template and a method for forming devices with the lithographic template. The lithographic template ( 10, 110, 210 ) is formed having a substrate ( 12, 112, 212 ) and a charge dissipation layer ( 20, 120, 220 ), and a patterned imageable relief layer, ( 16, 116, 216 ) formed on a surface ( 14, 114, 214 ) of the substrate ( 10, 110, 210 ) using radiation. The template ( 10, 110, 210 ) is used in the fabrication of a semiconductor device ( 344 ) for affecting a pattern in the device ( 344 ) by positioning ( 338 ) the template ( 10, 11, 210 ) in close proximity to semiconductor device ( 344 ) having a radiation sensitive material ( 334 ) formed thereon and applying a pressure ( 340 ) to cause the radiation sensitive material to flow into the relief image present on the template ( 10, 110, 210 ). Radiation ( 342 ) is then applied through the template ( 10, 110, 210 ) to cure portions of the radiation sensitive material and define the pattern in the radiation sensitive material. The template ( 10, 110, 210 ) is then removed to complete fabrication of semiconductor device ( 344 ).

公开(公告)号：AU1328002A

公开(公告)日：2002-05-15

申请号：AU1328002

申请日：2001-10-16

Applicant: MOTOROLA INC

Inventor： MANCINI DAVID P ,  SMITH STEVEN M ,  RESNICK DOUGLAS J

IPC: G03F7/09 ,  G03F7/11 ,  H01L21/027 ,  H01L21/311 ,  H01L21/314

Abstract: An improved and novel semiconductor device including an amorphous carbon layer for improved adhesion of photoresist and method of fabrication. The device includes a substrate having a surface, a carbon layer, formed on the surface of the substrate, and a resist layer formed on a surface of the carbon layer. The device is formed by providing a substrate having a surface, depositing a carbon layer on the surface of the substrate using plasma enhanced chemical vapor deposition (PECVD) or sputtering, and forming a resist layer on a surface of the carbon layer.

公开(公告)号：AU2003256620A1

公开(公告)日：2004-03-03

申请号：AU2003256620

申请日：2003-07-18

Applicant: MOTOROLA INC

Inventor： TALIN ALBERT ALEC ,  BAKER JEFFREY H ,  DAUKSHER WILLIAM J ,  HOOPER ANDY ,  RESNICK DOUGLAS J

IPC: C23C14/08 ,  G03F7/00 ,  G03F7/09 ,  H01L21/00

Abstract: This invention relates to semiconductor devices, microelectronic devices, micro electro mechanical devices, microfluidic devices, photonic devices, and more particularly to a lithographic template, a method of forming the lithographic template and a method for forming devices with the lithographic template. The lithographic template ( 10 ) is formed having a substrate ( 12 ), a transparent conductive layer ( 16 ) formed on a surface ( 14 ) of the substrate ( 12 ) by low pressure sputtering to a thickness that allows for preferably 90% transmission of ultraviolet light therethrough, and a patterning layer ( 20 ) formed on a surface ( 18 ) of the transparent conductive layer ( 16 ). The template ( 10 ) is used in the fabrication of a semiconductor device ( 30 ) for affecting a pattern in device ( 30 ) by positioning the template ( 10 ) in close proximity to semiconductor device ( 30 ) having a radiation sensitive material formed thereon and applying a pressure to cause the radiation sensitive material to flow into the relief image present on the template. Radiation is then applied through the template so as to cure portions of the radiation sensitive material and define the pattern in the radiation sensitive material. The template ( 10 ) is then removed to complete fabrication of semiconductor device ( 30 ).

公开(公告)号：AU2003243384A1

公开(公告)日：2003-12-31

申请号：AU2003243384

申请日：2003-06-03

Applicant: MOTOROLA INC

Inventor： MANCINI DAVID P ,  RESNICK DOUGLAS J

IPC: G03F7/11 ,  B81C99/00 ,  G03F7/00 ,  H01L21/027

Abstract: This invention relates to semiconductor devices, microelectronic devices, microelectromechanical devices, microfluidic devices, photonic devices, and more particularly to a multi-tiered lithographic template, a method of forming the multi-tiered lithographic template and a method for forming devices with the multi-tiered lithographic template. The multi-tiered lithographic template (10/10') is formed having a first relief structure and a second relief structure, thereby defining a multi-tiered relief image. The template is used in the fabrication of a semiconductor device (40) for affecting a pattern in device (40) by positioning the template in close proximity to semiconductor device (40) having a radiation sensitive material formed thereon and applying a pressure to cause the radiation sensitive material to flow into the multi-tiered relief image present on the template. Radiation is then applied through the multi-tiered template so as to further cure portions of the radiation sensitive material and further define the pattern in the radiation sensitive material. The multi-tiered template is then removed to complete fabrication of semiconductor device (40).

公开(公告)号：AU2002359600A8

公开(公告)日：2003-06-30

申请号：AU2002359600

申请日：2002-12-05

Applicant: MOTOROLA INC

Inventor： WILLSON CARLTON GRANT ,  MANCINI DAVID P ,  RESNICK DOUGLAS J

IPC: G03F7/00 ,  G03F7/09

Abstract: This invention relates to a lithographic template, a method of forming the lithographic template and a method for forming devices with the lithographic template. The lithographic template ( 10, 110, 210 ) is formed having a substrate ( 12, 112, 212 ) and a charge dissipation layer ( 20, 120, 220 ), and a patterned imageable relief layer, ( 16, 116, 216 ) formed on a surface ( 14, 114, 214 ) of the substrate ( 10, 110, 210 ) using radiation. The template ( 10, 110, 210 ) is used in the fabrication of a semiconductor device ( 344 ) for affecting a pattern in the device ( 344 ) by positioning ( 338 ) the template ( 10, 11, 210 ) in close proximity to semiconductor device ( 344 ) having a radiation sensitive material ( 334 ) formed thereon and applying a pressure ( 340 ) to cause the radiation sensitive material to flow into the relief image present on the template ( 10, 110, 210 ). Radiation ( 342 ) is then applied through the template ( 10, 110, 210 ) to cure portions of the radiation sensitive material and define the pattern in the radiation sensitive material. The template ( 10, 110, 210 ) is then removed to complete fabrication of semiconductor device ( 344 ).

公开(公告)号：WO0237538A3

公开(公告)日：2002-08-22

申请号：PCT/US0132295

申请日：2001-10-16

Applicant: MOTOROLA INC

Inventor： MANCINI DAVID P ,  SMITH STEVEN M ,  RESNICK DOUGLAS J

IPC: G03F7/09 ,  G03F7/11 ,  H01L21/027 ,  H01L21/311 ,  H01L21/314

CPC classification number: H01L21/0271 ,  G03F7/09 ,  G03F7/11 ,  H01L21/31111 ,  H01L21/3146

Abstract: An improved semiconductor device (10) including an amorphous carbon layer (14) for improved adhesion of photoresist and method of fabrication. The device includes a substrate (12) having a surface (13), a carbon layer (14), formed on the surface of the substrate, and a resist layer (16) formed on a surface of the carbon layer. The device is formed by providing a substrate having a surface, depositing a carbon layer on the surface of the substrate using plasma enhanced chemical vapor deposition (PECVD) or sputtering, and forming a resist layer on a surface of the carbon layer.

Abstract translation: 一种改进的半导体器件（10），包括用于改善光致抗蚀剂粘附性的无定形碳层（14）和制造方法。 该装置包括具有表面（13），形成在基板表面上的碳层（14）和形成在碳层表面上的抗蚀剂层（16）的基板（12）。 通过提供具有表面的衬底，使用等离子体增强化学气相沉积（PECVD）或溅射在衬底的表面上沉积碳层以及在碳层的表面上形成抗蚀剂层来形成器件。

公开(公告)号：WO2006057745A2

公开(公告)日：2006-06-01

申请号：PCT/US2005038035

申请日：2005-10-21

Applicant: MOTOROLA INC ,  GEHOSKI KATHY A ,  DAUKSHER WILLIAM J ,  LE NGOC V ,  RESNICK DOUGLAS J

Inventor： GEHOSKI KATHY A ,  DAUKSHER WILLIAM J ,  LE NGOC V ,  RESNICK DOUGLAS J

IPC: H01L21/4763

CPC classification number: G03F7/0002 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  H01L21/76814 ,  H01L21/76838

Abstract: A direct imprinting process for Step and Flash Imprint Lithography includes providing (40) a substrate (12); forming (44) an etch barrier layer (14) on the substrate; patterning (46) the etch barrier layer with a template (16) while curing with ultraviolet light through the template, resulting in a patterned etch barrier layer and a residual layer (20) on the substrate; and performing (48) an etch to substantially remove the residual layer. Optionally, a patterning layer (52) may be formed on the substrate (12) prior to forming the etch barrier layer (14). Additionally, an adhesive layer (13) may be applied (42) between the substrate (12) and the etch barrier layer (14).

Abstract translation: 步进和闪光印记光刻技术的直接印刷工艺包括提供（40）基材（12）; 在衬底上形成（44）蚀刻阻挡层（14）; 在通过模板的紫外线固化的同时用模板（16）对蚀刻阻挡层进行图案化（46），从而在衬底上产生图案化的蚀刻阻挡层和残余层（20）; 并执行（48）蚀刻以基本上去除残留层。 可选地，在形成蚀刻阻挡层（14）之前，可以在衬底（12）上形成图案化层（52）。 另外，可以在衬底（12）和蚀刻阻挡层（14）之间施加粘合剂层（13）（42）。

公开(公告)号：WO2004011258A2

公开(公告)日：2004-02-05

申请号：PCT/US0321759

申请日：2003-07-11

Applicant: MOTOROLA INC

Inventor： MANCINI DAVID P ,  DAUKSHER WILLIAM J ,  NORDQUIST KEVIN J ,  RESNICK DOUGLAS J

IPC: G03F7/20 ,  B29C59/16 ,  B41C20060101 ,  G03F1/60 ,  G03F7/00 ,  G03F7/16 ,  G21K5/00 ,  H01L21/027 ,  H01L21/3205 ,  H01L21/4763 ,  H05B6/00 ,  B41C

CPC classification number: B82Y40/00 ,  B82Y10/00 ,  G03F1/60 ,  G03F7/0002

Abstract: This invention relates to semiconductor devices, microelectronic devices, micro electro mechanical devices, microfluidic devices, and more particularly to an improved lithographic template including a repaired defect, a method of fabricating the improved lithographic template, a method for repairing defects present in the template, and a method for making semiconductor devices with the improved lithographic template. The lithographic template (10) is formed having a relief structure (26) and a repaired gap defect (36) within the relief structure (26). The template (10) is used in the fabrication of a semiconductor device (40) for affecting a pattern in device (40) by positioning the template (10) in close proximity to semiconductor device (40) having a radiation sensitive material formed thereon and applying a pressure to cause the radiation sensitive material to flow into the relief structure present on the template. Radiation is then applied through the template so as to further cure portions of the radiation sensitive material and further define the pattern in the radiation sensitive material. The template (10) is then removed to complete fabrication of semiconductor device (40).

Abstract translation: 本发明涉及半导体器件，微电子器件，微机电器件，微流体器件，更具体地涉及包括修复缺陷的改进的光刻模板，制造改进的光刻模板的方法，修复模板中存在的缺陷的方法， 以及用于制造具有改进的光刻模板的半导体器件的方法。 光刻模板（10）形成在浮雕结构（26）内具有浮雕结构（26）和修复的间隙缺陷（36）。 模板（10）用于制造半导体器件（40），用于通过将模板（10）靠近其上形成有辐射敏感材料的半导体器件（40）定位来影响器件（40）中的图案，以及 施加压力以使辐射敏感材料流入存在于模板上的浮雕结构中。 然后通过模板施加辐射，以进一步固化辐射敏感材料的部分，并进一步限定辐射敏感材料中的图案。 然后移除模板（10）以完成半导体器件（40）的制造。

公开(公告)号：WO03052513A2

公开(公告)日：2003-06-26

申请号：PCT/US0238749

申请日：2002-12-05

Applicant: MOTOROLA INC

Inventor： MANCINI DAVID P ,  RESNICK DOUGLAS J ,  WILLSON CARLTON GRANT

IPC: G03F7/00 ,  G03F7/09

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F7/0017 ,  G03F7/093

Abstract: This invention relates to a lithographic template, a method of forming the lithographic template and a method for forming devices with the lithographic template. The lithographic template (10, 110, 210) is formed having a substrate (12, 112, 212) and a charge dissipation layer (20, 120, 220), and a patterned imageable relief layer, (16, 116, 216) formed on a surface (14, 114, 214) of the substrate (10, 110, 210) using radiation. The template (10, 110, 210) is used in the fabrication of a semiconductor device (344) for affecting a pattern in the device (344) by positioning (338) the template (10, 11, 210) in close proximity to semiconductor device (344) by positioning (338) the template (10, 11, 210) in close proximity to semiconductor device (344) having a radiation sensitive material (334) formed thereon and applying a pressure (340) to cause the radiation sensitive material to flow into the relief image present on the template (10, 110, 210). Radiation (342) is then applied through the template (10, 110, 210) to cure portions of the radiation sensitive material and define the pattern in the radiation sensitive material. The template (10, 110, 210) is then removed to complete fabrication of semiconductor device (344).

Abstract translation: 本发明涉及一种光刻模板，一种形成光刻模板的方法和一种用该光刻模板形成器件的方法。 光刻模板（10,110,210）形成为具有衬底（12,112,212）和电荷耗散层（20,120,220），以及形成图案的可成像的浮雕层（16,116,216），形成 在使用辐射的衬底（10,110,210）的表面（14,114,214）上。 模板（10,110,210）用于制造半导体器件（344），用于通过将模板（10,11,210）定位（338）靠近半导体来影响器件（344）中的图案 设备（344）通过将模板（10,11,210）定位（338）紧邻其上形成有辐射敏感材料（334）的半导体器件（344）（338）并施加压力（340）以使辐射敏感材料 流入存在于模板（10,110,210）上的浮雕图像。 辐射（342）然后通过模板（10,110,210）施加以固化辐射敏感材料的部分并且限定辐射敏感材料中的图案。 然后去除模板（10,110,210）以完成半导体器件（344）的制造。