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    1.
    发明专利
    未知

    公开(公告)号：BRPI0516733A

    公开(公告)日：2008-09-23

    申请号：BRPI0516733

    申请日：2005-08-11

    Applicant: MOTOROLA INC

    Inventor： KLOMSDORF ARMIN W ,  LOVE ROBERT T ,  SCHIRMANN ERNEST ,  SCHWENT DALE

    IPC: H04B1/707 ,  H03F1/02 ,  H04W52/36

    Abstract: A method in a wireless communication transmitter including a baseband processor (310) that configures the transmitter for a particular signal configuration, and a headroom controller (350) for adjusting transmitter headroom based on the particular signal configuration. In one embodiment, the headroom is controlled based on a power metric, for example, a 3rd order polynomial or a peak to average ratio (PAR) metric, that is a function of the signal configuration. In another embodiment, the headroom is adjusted using information in a look up table.

    SEMICONDUCTOR DEVICE USING A BARRIER LAYER
    3.
    发明申请
    SEMICONDUCTOR DEVICE USING A BARRIER LAYER 审中-公开
    使用障碍层的半导体器件

    公开(公告)号：WO0184616A3

    公开(公告)日：2002-02-21

    申请号：PCT/US0112824

    申请日：2001-04-20

    Applicant: MOTOROLA INC

    Inventor： COSTA JULIO ,  SCHIRMANN ERNEST ,  CODY NYLES W ,  MARTINEZ MARINO J

    IPC: H01L29/423 ,  H01L21/285 ,  H01L21/335 ,  H01L21/338 ,  H01L29/41 ,  H01L29/47 ,  H01L29/812 ,  H01L29/872 ,  H01L29/76

    CPC classification number: H01L29/66871 ,  H01L21/28587 ,  H01L29/475 ,  H01L29/66462

    Abstract: An enhancement mode semiconductor device has a barrier layer (102) disposed between the gate electrode (104) of the device and the semiconductor substrate (106) underlying the gate electrode (104). The barrier layer (102) increases the Schottky barrier height of the gate electrode-barrier layer-substrate interface so that the portion of the substrate (106) underlying the gate electrode (104) operates in an enhancement mode. The barrier layer (102) is particularly useful in compound semiconductor field effect transistors, and preferred materials for the barrier layer include aluminum gallium arsenide and indium gallium arsenide.

    Abstract translation: 增强型半导体器件具有设置在器件的栅电极（104）与栅电极（104）下方的半导体衬底（106）之间的阻挡层（102）。 阻挡层（102）增加了栅电极 - 阻挡层 - 衬底界面的肖特基势垒高度，使得栅电极（104）下面的衬底（106）的部分以增强模式工作。 阻挡层（102）在化合物半导体场效应晶体管中特别有用，并且阻挡层的优选材料包括砷化铝镓和砷化铟镓。

    LOW POWER CONSUMPTION ADAPTIVE POWER AMPLIFIER
    4.
    发明申请
    LOW POWER CONSUMPTION ADAPTIVE POWER AMPLIFIER 审中-公开
    低功耗自适应功率放大器

    公开(公告)号：WO2005018088A3

    公开(公告)日：2009-03-26

    申请号：PCT/US2004024447

    申请日：2004-07-29

    Applicant: MOTOROLA INC ,  CONRAD CLARK W ,  KLOMSDORF ARMIN ,  SCHIRMANN ERNEST

    Inventor： CONRAD CLARK W ,  KLOMSDORF ARMIN ,  SCHIRMANN ERNEST

    IPC: H03F1/14 ,  H03F1/02 ,  H03F1/56 ,  H03F3/21 ,  H03F3/72

    CPC classification number: H03F3/211 ,  H03F1/02 ,  H03F1/0211 ,  H03F1/0261 ,  H03F1/0277 ,  H03F1/56 ,  H03F3/72 ,  H03F2200/303 ,  H03F2200/391 ,  H03F2200/417 ,  H03F2203/7227

    Abstract: A power amplification circuit (10) includes a scalable power amplifier (20) to produce an RF output signal (50) at an output of the power amplification circuit (10), and a variable impedance circuit (30) coupled to the output of the power amplification circuit (10). The scalable power amplifier (20) includes a plurality of selectively activated amplifier elements (22), (24), (26) to produce the RF output signal (50) in accordance with a desired RF output signal power level. The power amplification circuit (10) selectively activates individual amplifier elements by, for example reducing power or increasing power to at least one amplifier element. The variable impedance circuit (30) varies an impedance of the variable impedance circuit (30) to dynamically load the output of the scalable power amplifier(20).

    Abstract translation: 功率放大电路（10）包括可扩展功率放大器（20），以在功率放大电路（10）的输出处产生RF输出信号（50），以及可变阻抗电路（30），耦合到所述功率放大电路 功率放大电路（10）。 可扩展功率放大器（20）包括多个选择性激活的放大器元件（22），（24），（26），以根据期望的RF输出信号功率电平产生RF输出信号（50）。 功率放大电路（10）通过例如降低功率或增加至少一个放大器元件的功率来选择性地激活各个放大器元件。 可变阻抗电路（30）改变可变阻抗电路（30）的阻抗，以动态地加载可伸缩功率放大器（20）的输出。

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