公开(公告)号：JPH10223650A

公开(公告)日：1998-08-21

申请号：JP3407598

申请日：1998-01-30

Applicant: MOTOROLA INC

Inventor： SANDERS PAUL W ,  MACKIE TROY E ,  COSTA JULIO C ,  FREEMAN JR JOHN L ,  WOOD ALAN D

IPC: H01L29/73 ,  H01L21/265 ,  H01L21/331 ,  H01L29/08 ,  H01L29/732

Abstract: PROBLEM TO BE SOLVED: To enable use for RF power application, by providing a method for coping with the change of resistance value relative to the contact of a bipolar semiconductor device. SOLUTION: A semiconductor device 10 is formed on a semiconductor substrate 11 functioning as a collector region. A base region 12 is formed on the semiconductor substrate 11. An emitter region 52 is formed to be in contact with at least a part of the base region 12. A conducting layer 28 is used so as to make electric connection with the emitter region 52. In order to cope with the problem of a critical oxide layer 27 existing between the emitter region 52 and the conducting layer 28, opposite doping is applied to a part of the conducting layer 28 on the emitter region 52.

公开(公告)号：DE19752052A1

公开(公告)日：1998-08-06

申请号：DE19752052

申请日：1997-11-25

Applicant: MOTOROLA INC

Inventor： SANDERS PAUL W ,  FREEMAN JOHN L ,  MACKIE TROY E ,  WOOD ALAN D ,  COSTA JULIO C

IPC: H01L29/73 ,  H01L21/265 ,  H01L21/331 ,  H01L29/08 ,  H01L29/732