公开(公告)号：AU1317302A

公开(公告)日：2002-05-27

申请号：AU1317302

申请日：2001-10-15

Applicant: MOTOROLA INC

Inventor： RAMDANI JAMAL ,  DROOPAD RAVINDRANATH ,  HILT LYNDEE ,  CURLESS JAY ,  ZOLLNER STEFAN

IPC: H01L21/316 ,  H01L21/02 ,  H01L21/8242 ,  H01L21/8246 ,  H01L21/8247 ,  H01L27/105 ,  H01L27/108 ,  H01L29/51 ,  H01L29/78 ,  H01L29/788 ,  H01L29/792

Abstract: A semiconductor structure (400) and method for forming a semiconductor structure including a high dielectric constant material includes a monocrystalline semiconductor substrate (401), one or more layers of a stoichiometric monocrystalline, high dielectric constant material (404), and one or more layers of a non-stoichiometric, high dielectric constant material (405). The high dielectric constant material may include a monocrystalline alkali earth metal titanate, such as (Ba,Sr)TiO3. Semiconductor devices fabricated in accordance with the present invention exhibit reduced leakage current density.