Abstract:
Printed circuit board electronic assemblies (76) having improved thermal dissipation capabilities are obtained by adding electrically insulating but thermally conductive heat shunt components (80-85,90) to the circuit board (56) along with the regular electronic components (14-23). The heat shunt components (80-85,90) have a shape so that they may be placed on the printed circuit boards by the same assembly equipment used for the other electronic components (14-23). A typical heat shunt (80,90) component is a small parallelepiped of a highly thermally conducting electrically insulating dielectric (92), such as for example, alumina, beryllia, sapphire or aluminum nitride. It desirably has spaced-apart metal attachment lands (94,96) on one face (95) and an optional continuous metal layer (98) on the opposite face (97). In a typical application, one end (94) is soldered to the contact pad (66,68) where a power dissipating component (12) is also attached, and the other end (96) is soldered to a nearby ground lead (26′).
Abstract:
Printed circuit board electronic assemblies (76) having improved thermal dissipation capabilities are obtained by adding electrically insulating but thermally conductive heat shunt components (80-85,90) to the circuit board (56) along with the regular electronic components (14-23). The heat shunt components (80-85,90) have a shape so that they may be placed on the printed circuit boards by the same assembly equipment used for the other electronic components (14-23). A typical heat shunt (80,90) component is a small parallelepiped of a highly thermally conducting electrically insulating dielectric (92), such as for example, alumina, beryllia, sapphire or aluminum nitride. It desirably has spaced-apart metal attachment lands (94,96) on one face (95) and an optional continuous metal layer (98) on the opposite face (97). In a typical application, one end (94) is soldered to the contact pad (66,68) where a power dissipating component (12) is also attached, and the other end (96) is soldered to a nearby ground lead (26′).
Abstract:
Hybrid RF amplifiers (10) of improved performance are obtained by arranging film resistors (R1,R2,R3,R4), metallization and other components on a circuit board (40) so that symmetrical parts of the electrical circuit (10) are arranged in a mirror symmetrical fashion about a line (60) extending along the circuit board (40) and by aligning symmetrical resistors (R1,R2) either parallel or orthogonal to this line (60) and by utilizing common ground metal regions (54,54') to terminate resistors (R1,R2) that are aligned and orthogonal to the mirror line (60) and spaced apart by a gap (56) but joined to a common ground (50) at a single location.
Abstract:
A two-stage, interstage transformer-coupled amplifier (11,12,13,14) is provided with a degeneration resistor (33) coupled between the collector of the first stage transistor (27) and the power supply to limit the power dissipated in the first stage transistor (27). The first (26) and second (44) stages are coupled to ground through capacitor/inductor circuits to eliminate signal noise in the supply voltage. The output is filtered to remove harmonics and provide output impedance matching.
Abstract:
Hybrid RF amplifiers (10) of improved performance are obtained by arranging film resistors (R1,R2,R3,R4), metallization and other components on a circuit board (40) so that symmetrical parts of the electrical circuit (10) are arranged in a mirror symmetrical fashion about a line (60) extending along the circuit board (40) and by aligning symmetrical resistors (R1,R2) either parallel or orthogonal to this line (60) and by utilizing common ground metal regions (54,54′) to terminate resistors (R1,R2) that are aligned and orthogonal to the mirror line (60) and spaced apart by a gap (56) but joined to a common ground (50) at a single location.
Abstract:
A two-stage, interstage transformer-coupled amplifier (11,12,13,14) is provided with a degeneration resistor (33) coupled between the collector of the first stage transistor (27) and the power supply to limit the power dissipated in the first stage transistor (27). The first (26) and second (44) stages are coupled to ground through capacitor/inductor circuits to eliminate signal noise in the supply voltage. The output is filtered to remove harmonics and provide output impedance matching.
Abstract:
Hybrid RF amplifiers (10) of improved performance are obtained by arranging film resistors (R1,R2,R3,R4), metallization and other components on a circuit board (40) so that symmetrical parts of the electrical circuit (10) are arranged in a mirror symmetrical fashion about a line (60) extending along the circuit board (40) and by aligning symmetrical resistors (R1,R2) either parallel or orthogonal to this line (60) and by utilizing common ground metal regions (54,54′) to terminate resistors (R1,R2) that are aligned and orthogonal to the mirror line (60) and spaced apart by a gap (56) but joined to a common ground (50) at a single location.