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    Circuit board and production method therefor, and electronic device and production method therefor
    1.
    发明授权
    Circuit board and production method therefor, and electronic device and production method therefor 有权

    公开(公告)号：US11570899B2

    公开(公告)日：2023-01-31

    申请号：US17255606

    申请日：2019-06-28

    Applicant: Material Concept, Inc.

    Inventor： Junichi Koike

    IPC: H05K1/18 ,  H05K1/03

    Abstract: A circuit board that has flexibility owing to an organic insulating layer and that still has high adhesion between metal wiring and the organic insulating layer; and a method for producing the circuit board without employing photolithography. The circuit board comprising a metal wiring arrangement portion and a metal wiring non-arrangement portion, wherein: in the metal wiring arrangement portion, metal wiring, a first diffusion layer, and a first organic insulating layer are stacked; in the metal wiring non-arrangement portion, a metal oxide layer, a second diffusion layer, and a second organic insulating layer are stacked; the metal wiring is made of a first metal element; and the first diffusion layer contains the first metal element and a second metal element.

    Method for firing copper paste
    2.
    发明授权
    Method for firing copper paste 有权

    公开(公告)号：US10433427B2

    公开(公告)日：2019-10-01

    申请号：US15319549

    申请日：2015-06-02

    Applicant: Material Concept, Inc.

    Inventor： Junichi Koike ,  Yuji Sutou ,  Daisuke Ando

    IPC: H05K3/12 ,  B05D3/04 ,  B22F3/10 ,  B05D3/02 ,  H01B1/22 ,  H01B5/02 ,  H01B5/14 ,  H01B13/00 ,  H01L21/48 ,  H01B1/00 ,  B22F1/00

    Abstract: To provide a method for firing a copper paste, which improves sinterability of copper particles for the purpose of forming a copper wiring line that is decreased in the electrical conductivity. A method for firing a copper paste, which comprises: an application step wherein a copper paste is applied over a substrate; a first heating step wherein the substrate is heated in a nitrogen gas atmosphere containing from 500 ppm to 2,000 ppm (inclusive) of an oxidizing gas in terms of volume ratio after the application step, thereby oxidizing and sintering copper particles in the copper paste; and a second heating step wherein the substrate is heated in a nitrogen gas atmosphere containing 1% or more of a reducing gas in terms of volume ratio after the first heating step, thereby reducing the oxidized and sintered copper oxide.

    Solar cell module and method for manufacturing the same
    3.
    发明授权
    Solar cell module and method for manufacturing the same 有权

    公开(公告)号：US10355147B2

    公开(公告)日：2019-07-16

    申请号：US15539430

    申请日：2015-12-17

    Applicant: Material Concept, Inc.

    Inventor： Junichi Koike ,  Yuji Sutou ,  Daisuke Ando ,  Makoto Wada

    IPC: H01L31/18 ,  H01L31/048 ,  H01L31/0216 ,  H01L31/0224

    Abstract: A solar cell module capable of preventing the occurrence of a PID failure in a solar photovoltaic power generation system with a MW capacity, said system being used in a high-temperature high-humidity environment; and a method for manufacturing this solar cell module. A solar cell module which comprises a protection glass material and a sealing material on a light receiving surface side of a substrate, and which also comprises an oxide layer between the substrate and the protection glass material, said oxide layer containing a metal element and silicon. It is preferable that the oxide layer contains at least one metal element selected from the group consisting of magnesium, aluminum, titanium, vanadium, chromium, manganese, zirconium, niobium and molybdenum. It is also preferable that the oxide layer has a refractive index of from 1.5 to 2.3 (inclusive) with respect to incident light having a wavelength of 587 nm.

    Electronic component and method for producing same
    5.
    发明授权
    Electronic component and method for producing same 有权

    公开(公告)号：US11903144B2

    公开(公告)日：2024-02-13

    申请号：US17421200

    申请日：2020-01-09

    Applicant: Material Concept, Inc.

    Inventor： Junichi Koike

    IPC: H05K3/38 ,  B22F7/04 ,  C04B37/02 ,  H05K1/03 ,  H05K1/09

    CPC classification number: H05K3/388 ,  B22F7/04 ,  C04B37/025 ,  H05K1/0306 ,  H05K1/09 ,  B22F2007/042 ,  C04B2235/32

    Abstract: The purpose of the present invention is to provide an electronic component in which a copper electrode and an inorganic substrate exhibit strong adhesion to each other. A method for producing an electronic component according to the present invention comprises: an application step wherein a paste is applied onto an inorganic substrate, which paste contains copper particles, copper oxide particles and/or nickel oxide particles, and inorganic oxide particles having a softening point; a sintering step wherein a sintered body which contains at least copper is formed by means of heating in an inert gas atmosphere at a temperature that is less than the softening point of the inorganic oxide particles but not less than the sintering temperature of the copper particles; and a softening step wherein heating is carried out in an inert gas atmosphere at a temperature that is not less than the softening point of the inorganic oxide particles.

    Wiring structure and semiconductor device
    6.
    发明授权
    Wiring structure and semiconductor device 有权

    公开(公告)号：US11476195B2

    公开(公告)日：2022-10-18

    申请号：US16429622

    申请日：2019-06-03

    Applicant: Material Concept, Inc.

    Inventor： Junichi Koike

    IPC: H01L29/43 ,  H01L23/532 ,  H01L21/768

    Abstract: To provide a wiring material which does not require a diffusion barrier layer and exhibits excellent conductivity and adhesion property between a conductor and an insulator and a semiconductor element using the same. The wiring structure of the present invention includes a conductor containing an intermetallic compound and an insulator layer. The intermetallic compound preferably contains two or more kinds of metal elements selected from the group consisting of Al, Fe, Co, Ni, and Zn. In addition, the intermetallic compound is preferably one or more kinds selected from an intermetallic compound containing Al and Co, an intermetallic compound containing Al and Fe, an intermetallic compound containing Al and Ni, an intermetallic compound containing Co and Fe, or an intermetallic compound containing Ni and Zn.

    Solar cell and production method therefor
    8.
    发明授权
    Solar cell and production method therefor 有权

    公开(公告)号：US10529875B2

    公开(公告)日：2020-01-07

    申请号：US15106963

    申请日：2014-12-22

    Applicant: Material Concept, Inc.

    Inventor： Junichi Koike ,  Yuji Sutou ,  Daisuke Ando ,  Tri Hai Hoang

    IPC: H01L31/0224 ,  H01L31/068 ,  H01L31/0216 ,  H01L31/18

    Abstract: The present invention is provided with an interface layer that minimizes interdiffusion between a silicon substrate and copper electrode wiring that are used as a solar cell, that improves the adhesive properties of copper wiring, and that is used to obtain ohmic contact characteristics. This silicon solar cell comprises a silicon substrate and is provided with a metal oxide layer that is formed on the silicon substrate and wiring that is formed on the metal oxide layer and that comprises mainly copper. The metal oxide layer contains (a) one of either titanium or manganese, (b) one of vanadium, niobium, tantalum, or silicon, and (c) at least one of copper and nickel. In addition, the metal oxide layer comprises copper or nickel as metal particles that are diffused in the interior of the metal oxide layer.

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