Process for filling etched holes
    1.
    发明授权

    公开(公告)号:US09708183B2

    公开(公告)日:2017-07-18

    申请号:US15046239

    申请日:2016-02-17

    Abstract: A process for filling one or more etched holes defined in a frontside surface of a wafer substrate. The process includes the steps of: (i) depositing a layer of a thermoplastic first polymer onto the frontside surface and into each hole; (ii) reflowing the first polymer; (iii) exposing the wafer substrate to a controlled oxidative plasma; (iv) optionally repeating steps (i) to (iii); (v) depositing a layer of a photoimageable second polymer; (vi) selectively removing the second polymer from regions outside a periphery of the holes using exposure and development; and (vii) planarizing the frontside surface to provide holes filled with a plug comprising the first and second polymers, which are different than each other. Each plug has a respective upper surface coplanar with the frontside surface.

    PROCESS FOR FILLING ETCHED HOLES
    2.
    发明申请
    PROCESS FOR FILLING ETCHED HOLES 有权
    填充蚀刻孔的方法

    公开(公告)号:US20160236930A1

    公开(公告)日:2016-08-18

    申请号:US15046239

    申请日:2016-02-17

    Abstract: A process for filling one or more etched holes defined in a frontside surface of a wafer substrate. The process includes the steps of: (i) depositing a layer of a thermoplastic first polymer onto the frontside surface and into each hole; (ii) reflowing the first polymer; (iii) exposing the wafer substrate to a controlled oxidative plasma; (iv) optionally repeating steps (i) to (iii); (v) depositing a layer of a photoimageable second polymer; (vi) selectively removing the second polymer from regions outside a periphery of the holes using exposure and development; and (vii) planarizing the frontside surface to provide holes filled with a plug comprising the first and second polymers, which are different than each other. Each plug has a respective upper surface coplanar with the frontside surface.

    Abstract translation: 一种用于填充限定在晶片衬底的前表面中的一个或多个蚀刻孔的工艺。 该方法包括以下步骤:(i)将热塑性第一聚合物层沉积到前表面和每个孔中; (ii)回流第一聚合物; (iii)将晶片衬底暴露于受控氧化等离子体; (iv)任选地重复步骤(i)至(iii); (v)沉积可光成像的第二聚合物层; (vi)使用曝光和显影从所述孔的外周边区域选择性地除去所述第二聚合物; 和(vii)平面化前侧表面以提供填充有彼此不同的第一和第二聚合物的塞子的孔。 每个插头具有与前侧表面共面的相应的上表面。

    Process for filling etched holes using photoimageable thermoplastic polymer

    公开(公告)号:US10329146B2

    公开(公告)日:2019-06-25

    申请号:US15623267

    申请日:2017-06-14

    Abstract: A process for filling one or more etched holes defined in a frontside surface of a wafer substrate. The process includes the steps of: (i) depositing a layer of a photoimageable thermoplastic polymer onto the frontside surface and into each hole; (ii) reflowing the polymer; (iii) selectively removing the polymer from regions outside a periphery of each hole, the selective removing comprising exposure and development of the polymer; (iv) optionally repeating steps (i) to (iii) until each hole is overfilled with the polymer; and (v) planarizing the frontside surface to provide one or more holes filled with a plug of the polymer. Each plug has a respective upper surface coplanar with the frontside surface.

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