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公开(公告)号：EP0955642A3
公开(公告)日：2001-12-05
申请号：EP99303244.0
申请日：1999-04-27
Inventor： Hunt, Andrew T. , Tzyy, Jiuan Hwang , Shao, Hong , Thomas, Joc
CPC classification number: H01L28/20 , C23C16/40 , C23C16/453 , H01C7/006 , H01C17/20 , H01C17/2416 , H05K1/167 , H05K3/064 , H05K2201/0317 , H05K2201/0355 , H05K2203/0338 , H05K2203/1338
Abstract: The invention is directed to thin film resistors which may be embedded in multi-layer printed circuit boards. The invention is also directed to structures for forming such thin film resistors and to methods for forming such structures, including the use of combustion chemical vapor deposition. The invention is also directed to chemical precursor solutions by which resistive materials can be deposited on a substrate by combustion chemical vapor deposition techniques.
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公开(公告)号：EP0976847A2
公开(公告)日：2000-02-02
申请号：EP99303373.7
申请日：1999-04-29
Applicant: MicroCoating Technologies, Inc.
Inventor： Hunt, Andrew T. , Shanmugham, Subramaniam , Danielson, William D. , Luten, Henry A. , Hwang, Tzyy Jiuan , Deshpande, Girish
CPC classification number: C23C16/45519 , B05D1/08 , C23C16/14 , C23C16/18 , C23C16/30 , C23C16/342 , C23C16/36 , C23C16/406 , C23C16/409 , C23C16/453 , C23C16/45561 , C23C16/45576 , C23C16/45595 , C23C16/50
Abstract: An improved chemical vapor deposition apparatus and procedure is disclosed. The technique provides improved shielding of the reaction and deposition zones (26, 28) involved in providing CVD coatings by establishing a barrier zone (30) wherein gases flowing from a reaction zone (26) and deposition zone (28) to the ambient atmosphere are made to flow at a velocity of at least 15.24 m/min. Coatings can thus be produced, at atmospheric pressure, of materials which are sensitive to components in the atmosphere on substrates which are sensitive to high temperatures and which are too large, or inconvenient, to process in vacuum or similar chambers. The improved technique can be used with various energy sources and is particularly compatible with Combustion Chemical Vapor Deposition (CCVD) techniques.
Abstract translation: 公开了一种改进的化学气相沉积装置和方法。 该技术通过建立阻挡区（30）提供涉及提供CVD涂层的反应和沉积区（26,28）的改进屏蔽，其中从反应区（26）和沉积区（28）流到环境大气的气体为 使其以至少15.24m / min的速度流动。 因此，在大气压下，可以在大气压下对在高温敏感且在真空或类似室中处理过大或不方便的基板上的大气中的组分敏感的材料制成涂层。 改进的技术可以与各种能源一起使用，并且与燃烧化学气相沉积（CCVD）技术特别相容。
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3.发明公开
公开(公告)号：EP0976847A3
公开(公告)日：2001-10-10
申请号：EP99303373.7
申请日：1999-04-29
Applicant: MicroCoating Technologies, Inc.
Inventor： Hunt, Andrew T. , Shanmugham, Subramaniam , Danielson, William D. , Luten, Henry A. , Hwang, Tzyy Jiuan , Deshpande, Girish
CPC classification number: C23C16/45519 , B05D1/08 , C23C16/14 , C23C16/18 , C23C16/30 , C23C16/342 , C23C16/36 , C23C16/406 , C23C16/409 , C23C16/453 , C23C16/45561 , C23C16/45576 , C23C16/45595 , C23C16/50
Abstract: An improved chemical vapor deposition apparatus and procedure is disclosed. The technique provides improved shielding of the reaction and deposition zones (26, 28) involved in providing CVD coatings by establishing a barrier zone (30) wherein gases flowing from a reaction zone (26) and deposition zone (28) to the ambient atmosphere are made to flow at a velocity of at least 15.24 m/min. Coatings can thus be produced, at atmospheric pressure, of materials which are sensitive to components in the atmosphere on substrates which are sensitive to high temperatures and which are too large, or inconvenient, to process in vacuum or similar chambers. The improved technique can be used with various energy sources and is particularly compatible with Combustion Chemical Vapor Deposition (CCVD) techniques.
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公开(公告)号：EP0955642A2
公开(公告)日：1999-11-10
申请号：EP99303244.0
申请日：1999-04-27
Inventor： Hunt, Andrew T. , Tzyy, Jiuan Hwang , Shao, Hong , Thomas, Joc
CPC classification number: H01L28/20 , C23C16/40 , C23C16/453 , H01C7/006 , H01C17/20 , H01C17/2416 , H05K1/167 , H05K3/064 , H05K2201/0317 , H05K2201/0355 , H05K2203/0338 , H05K2203/1338
Abstract: The invention is directed to thin film resistors which may be embedded in multi-layer printed circuit boards. The invention is also directed to structures for forming such thin film resistors and to methods for forming such structures, including the use of combustion chemical vapor deposition. The invention is also directed to chemical precursor solutions by which resistive materials can be deposited on a substrate by combustion chemical vapor deposition techniques.
Abstract translation: 本发明涉及可以嵌入在多层印刷电路板中的薄膜电阻器。 本发明还涉及用于形成这种薄膜电阻器的结构以及用于形成这种结构的方法，包括使用燃烧化学气相沉积。 本发明还涉及通过燃烧化学气相沉积技术将电阻材料沉积在衬底上的化学前体溶液。
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