公开(公告)号：WO1993014445A1

公开(公告)日：1993-07-22

申请号：PCT/US1993000456

申请日：1993-01-15

Applicant: MICROUNITY SYSTEMS ENGINEERING, INC.

Inventor： MICROUNITY SYSTEMS ENGINEERING, INC. ,  CHEN, Jang, Fung ,  MATTHEWS, James, A.

IPC: G03F09/00

CPC classification number: G03F1/36 ,  G03F7/70433 ,  G03F7/70441

Abstract: An improvement for reducing proximity effects comprised of additional lines, referred to as intensity leveling bars, into the mask pattern. The leveling bars perform the function of adjusting the edge intensity gradients of isolated edges in the mask pattern, to match the edge intensity gradients of densely packed edges. Leveling bars are placed parallel to isolated edges such that intensity gradient leveling occurs on all isolated edges of the mask pattern. In addition, the leveling bars are designed to have a width significantly less than the resolution of the exposure tool. Therefore, leveling bars that are present in the mask pattern produce resist patterns that completely developed away when a nominal exposure energy is utilized during exposure of photoresist.

公开(公告)号：WO1993020482A1

公开(公告)日：1993-10-14

申请号：PCT/US1993003126

申请日：1993-03-29

Applicant: MICROUNITY SYSTEMS ENGINEERING, INC.

Inventor： MICROUNITY SYSTEMS ENGINEERING, INC. ,  CHEN, Jang, Fung ,  MATTHEWS, James, A.

IPC: G03F07/20

CPC classification number: G03F7/70466 ,  G03F7/2022

Abstract: A method of printing a sub-resolution device feature (16) having first and second edges spaced in close proximity to one another on a semiconductor substrate (20) includes the steps of first depositing a radiation-sensitive material on the substrate, then providing a first mask image segment (11) which corresponds to the first edge. The first mask image segment is then exposed with radiation (10) using an imaging tool (12) to produce a first pattern edge gradient (14). The first pattern edge gradient defines the first edge of the feature in the material. A second mask image segment (13) is then provided corresponding to the second feature edge. This second mask image segment is exposed to radiation (10) to produce a second pattern edge gradient (17) which defines the second edge of the feature. Once the radiation-sensitive material has been developed, the two-dimensional feature is reproduced on the substrate.

Abstract translation: 印刷具有在半导体衬底（20）上彼此靠近彼此间隔开的第一和第二边缘的子分辨率器件特征（16）的方法包括以下步骤：首先在衬底上沉积辐射敏感材料，然后提供 第一掩模图像段（11），其对应于第一边缘。 然后使用成像工具（12）用辐射（10）将第一掩模图像段曝光以产生第一图案边缘梯度（14）。 第一个图案边缘渐变定义材料中特征的第一个边缘。 然后对应于第二特征边缘提供第二掩模图像段（13）。 该第二掩模图像段暴露于辐射（10）以产生限定特征的第二边缘的第二图案边缘梯度（17）。 一旦辐射敏感材料已经开发出来，二维特征就在基片上再现。

公开(公告)号：EP0634028A1

公开(公告)日：1995-01-18

申请号：EP93912115.0

申请日：1993-03-29

Applicant: MicroUnity Systems Engineering, Inc.

Inventor： CHEN, Jang, Fung ,  MATTHEWS, James, A.

IPC: G03F7 ,  H01L21

CPC classification number: G03F7/70466 ,  G03F7/2022

Abstract: A method of printing a sub-resolution device feature (16) having first and second edges spaced in close proximity to one another on a semiconductor substrate (20) includes the steps of first depositing a radiation-sensitive material on the substrate, then providing a first mask image segment (11) which corresponds to the first edge. The first mask image segment is then exposed with radiation (10) using an imaging tool (12) to produce a first pattern edge gradient (14). The first pattern edge gradient defines the first edge of the feature in the material. A second mask image segment (13) is then provided corresponding to the second feature edge. This second mask image segment is exposed to radiation (10) to produce a second pattern edge gradient (17) which defines the second edge of the feature. Once the radiation-sensitive material has been developed, the two-dimensional feature is reproduced on the substrate.

公开(公告)号：EP0620931A1

公开(公告)日：1994-10-26

申请号：EP93903571.0

申请日：1993-01-15

Applicant: MicroUnity Systems Engineering, Inc.

Inventor： CHEN, Jang, Fung ,  MATTHEWS, James, A.

IPC: G03F1 ,  G03F7 ,  G03F9 ,  H01L21

CPC classification number: G03F1/36 ,  G03F7/70433 ,  G03F7/70441

Abstract: Est décrit un perfectionnement pour réduire les effets de proximité, consistant à ajouter, dans le motif de masque, des lignes minces appelées barres d'égalisation d'intensité. Ces barres d'égalisation ont pour fonction d'ajuster les gradients d'intensité des bords isolés du motif de masque, afin qu'ils correspondent aux gradients d'intensité des bords très rapprochés. Ces barres d'égalisation sont placées parallèlement aux bords isolés de telle manière que l'égalisation des gradients d'intensité s'effectue sur tous les bords isolés du motif de masque. En outre, les barres d'égalisation sont destinées à présenter une largeur notablement inférieure à la résolution de l'outil de sensibilisation. Par conséquent, lesdites barres qui sont présentes dans le motif de masque produisent des motifs de résist qui disparaissent complètement au dléveloppement lorsqu'une énergie de sensibilisation nominale est utilisée pendant l'exposition du photorésist.

公开(公告)号：EP0744044A1

公开(公告)日：1996-11-27

申请号：EP95909535.0

申请日：1995-02-09

Applicant: MicroUnity Systems Engineering, Inc.

Inventor： CHEN, Jang, Fung ,  MATTHEWS, James, A.

IPC: G03F1 ,  G03F7

CPC classification number: G03F1/36 ,  G03F7/70125 ,  G03F7/70433

Abstract: In a lithographical tool utilizing off-axis illumination, masks to provide increased depth of focus and minimize CD differences between certain features are disclosed. A first mask for reducing proximity effects between isolated and densely packed features and increasing depth of focus (DOF) of isolated features is disclosed. The first mask comprises additional lines (214) referred to as scattering bars, disposed next to isolated edges. The bars are spaced a distance from isolated edges such that isolated and densely packed edge gradients substantially match so that proximity effects become negligible. The width of the bars is set so that a maximum DOF range for the isolated feature is achieved. A second mask, that is effective with quadrupole illumination only, is also disclosed. This mask 'boosts' intensity levels and consequently DOF ranges for smaller square contacts so that they approximate intensity levels and DOF ranges of larger elongated contacts. Increasing the intensity levels in smaller contacts reduces critical dimension differences between variably sized contact patterns when transferred to a resist layer. The second mask comprises additional openings, referred to as anti-scattering bars, disposed about the square contact openings. The amount of separation between the edge of the smaller contact and the anti-scattering bars determines the amount of increased intensity. The width of the anti-scattering bars determines the amount of increase in DOF range. Both scattering bar and anti-scattering bars are designed to have widths significantly less than the resolution of the exposure tool so that they do not produce a pattern during exposure of photoresist.

公开(公告)号：EP0620931B1

公开(公告)日：1999-04-14

申请号：EP93903571.3

申请日：1993-01-15

Applicant: MicroUnity Systems Engineering, Inc.

Inventor： CHEN, Jang, Fung ,  MATTHEWS, James, A.

IPC: G03F9/00 ,  G03F1/14

CPC classification number: G03F1/36 ,  G03F7/70433 ,  G03F7/70441

公开(公告)号：EP0634028B1

公开(公告)日：1998-07-22

申请号：EP93912115.8

申请日：1993-03-29

Applicant: MicroUnity Systems Engineering, Inc.

Inventor： CHEN, Jang, Fung ,  MATTHEWS, James, A.

IPC: G03F7/20

CPC classification number: G03F7/70466 ,  G03F7/2022