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    BACK CONTACT SOLAR CELLS WITH EFFECTIVE AND EFFICIENT DESIGNS AND CORRESPONDING PATTERNING PROCESSES
    1.
    发明申请
    BACK CONTACT SOLAR CELLS WITH EFFECTIVE AND EFFICIENT DESIGNS AND CORRESPONDING PATTERNING PROCESSES 审中-公开
    返回联系有效和有效的设计和相关方案的太阳能电池

    公开(公告)号：WO2010135153A3

    公开(公告)日：2011-03-10

    申请号：PCT/US2010034762

    申请日：2010-05-13

    Applicant: NANOGRAM CORP ,  SRINIVASAN UMA ,  ZHOU XIN ,  HIESLMAIR HENRY ,  PAKALA NEERAJ

    Inventor： SRINIVASAN UMA ,  ZHOU XIN ,  HIESLMAIR HENRY ,  PAKALA NEERAJ

    IPC: H01L31/042

    CPC classification number: H01L21/22 ,  H01L21/2255 ,  H01L21/228 ,  H01L21/268 ,  H01L31/022441 ,  H01L31/0682 ,  Y02E10/547

    Abstract: Laser based processes are used alone or in combination to effectively process doped domains for semiconductors and/or current harvesting structures. For example, dopants can be driven into a silicon/germanium semiconductor layer from a bare silicon/ germanium surface using a laser beam. Deep contacts have been found to be effective for producing efficient solar cells. Dielectric layers can be effectively patterned to provide for selected contact between the current collectors and the doped domains along the semiconductor surface. Rapid processing approaches are suitable for efficient production processes.

    Abstract translation: 基于激光的工艺单独使用或组合使用以有效地处理半导体和/或当前采集结构的掺杂域。 例如，掺杂剂可以使用激光束从裸硅/锗表面驱动到硅/锗半导体层中。 已经发现深层接触对于生产高效太阳能电池是有效的。 电介质层可以被有效地构图以提供集电器和沿着半导体表面的掺杂区域之间的选择的接触。 快速处理方法适用于高效的生产工艺。

    LAYER TRANSFER FOR LARGE AREA INORGANIC FOILS
    2.
    发明申请
    LAYER TRANSFER FOR LARGE AREA INORGANIC FOILS 审中-公开
    大面积无机玻璃的层转移

    公开(公告)号：WO2009094176A2

    公开(公告)日：2009-07-30

    申请号：PCT/US2009000428

    申请日：2009-01-23

    Applicant: NANOGRAM CORP ,  BAILEY ROBERT J ,  SANDERS WILLIAM A ,  MOSSO RONALD J ,  HIESLMAIR HENRY ,  MORRIS JULIO E ,  MOGAARD MARTIN E ,  HERNANDEZ JACOB A

    Inventor： BAILEY ROBERT J ,  SANDERS WILLIAM A ,  MOSSO RONALD J ,  HIESLMAIR HENRY ,  MORRIS JULIO E ,  MOGAARD MARTIN E ,  HERNANDEZ JACOB A

    CPC classification number: C23C16/402 ,  C23C16/56 ,  Y10T156/17 ,  Y10T428/249967

    Abstract: Layer transfer approaches are described to take advantage of large area, thin inorganic foils formed onto a porous release layer. In particular, since the inorganic foils can be formed from ceramics and/or crystalline materials that do not bend a large amount, approaches are described to provide for gradual pulling along an edge to separate the foil from a holding surface along a curved surface designed to not excessively bend the foil such that the foil is not substantially damaged in the transfer process. Apparatuses are described to perform the transfer with a rocking motion or with a rotating cylindrical surface. Furthermore, stabilization of porous release layers can improve the qualities of resulting inorganic foils formed on the release layer. In particular, flame treatments can provide improved release layer properties, and the deposition of an interpenetrating stabilization composition can be deposited using CVD to stabilize a porous layer.

    Abstract translation: 描述了层转移方法以利用形成在多孔释放层上的大面积的薄无机箔。 特别地，由于无机箔可以由不会大量弯曲的陶瓷和/或结晶材料形成，所以描述了一些方法来提供沿着边缘的逐渐拉伸，以沿着弯曲表面将箔与保持表面分离，所述弯曲表面被设计成 不会使箔过度弯曲，使得箔在转印过程中基本上不被损坏。 描述了用摇摆运动或旋转的圆柱形表面进行传送的装置。 此外，多孔剥离层的稳定化可以提高形成在剥离层上的所得无机箔的质量。 特别地，火焰处理可以提供改善的剥离层性质，并且可以使用CVD沉积互穿稳定化组合物的沉积以稳定多孔层。

    METAL PATTERNING FOR ELECTRICALLY CONDUCTIVE STRUCTURES BASED ON ALLOY FORMATION
    3.
    发明申请
    METAL PATTERNING FOR ELECTRICALLY CONDUCTIVE STRUCTURES BASED ON ALLOY FORMATION 审中-公开
    基于合金形成的导电结构的金属图案

    公开(公告)号：WO2010135178A3

    公开(公告)日：2011-02-03

    申请号：PCT/US2010034860

    申请日：2010-05-14

    Applicant: NANOGRAM CORP ,  SRINIVASAN UMA ,  PAKALA NEERAJ ,  SANDERS WILLIAM A ,  HIESLMAIR HENRY

    Inventor： SRINIVASAN UMA ,  PAKALA NEERAJ ,  SANDERS WILLIAM A ,  HIESLMAIR HENRY

    IPC: H01L31/042 ,  H01L31/18

    CPC classification number: C22F1/00 ,  C21D1/34 ,  H01L21/32134 ,  H01L27/124 ,  H01L31/022441 ,  H01L31/0682 ,  Y02E10/547 ,  Y10T428/12396

    Abstract: Layered metal structures are patterned to form a surface with some locations having an alloy along the top surface at some locations and the original top metal layer at other locations along the surface. The alloy and original top metal layer can be selected to have differential etching properties such that the pattern of the alloy or original metal can be selectively etched to form a patterned metal interconnect. In general, the patterning is performed by localized heating that drives formation of the alloy at the heated locations. The metal patterning can be useful for solar cell applications as well as for electronics applications, such as display applications.

    Abstract translation: 层状金属结构被图案化以形成表面，其中一些位置在某些位置处具有沿着顶表面的合金，并且沿表面的其它位置具有原始顶部金属层。 可以选择合金和原始顶部金属层以具有差异蚀刻性质，使得可以选择性地蚀刻合金或原始金属的图案以形成图案化的金属互连。 通常，图案化是通过局部加热进行的，其驱动在加热位置形成合金。 金属图案化可用于太阳能电池应用以及电子应用，例如显示器应用。

    ZONE MELT RECRYSTALLIZATION FOR INORGANIC FILMS
    4.
    发明申请
    ZONE MELT RECRYSTALLIZATION FOR INORGANIC FILMS 审中-公开
    无机膜的区域熔融再结晶

    公开(公告)号：WO2009094124A2

    公开(公告)日：2009-07-30

    申请号：PCT/US2009000301

    申请日：2009-01-16

    Applicant: NANOGRAM CORP ,  HIESLMAIR HENRY ,  MOSSO RONALD J

    Inventor： HIESLMAIR HENRY ,  MOSSO RONALD J

    IPC: H01L21/20

    CPC classification number: C30B13/14 ,  C30B29/06 ,  C30B29/08 ,  C30B29/52

    Abstract: ZMR apparatuses provide for controlled temperature flow through the system to reduce energy consumption while providing for desired crystal growth properties. The apparatus can include a cooling system to specifically remove a desired amount of heat from a melted film to facilitate crystallization. Furthermore, the apparatus can have heated walls to create a background temperature within the chamber that reduces energy use through the reduction or elimination of cooling for the chamber walls. The apparatuses and corresponding methods can be used with inorganic films directly or indirectly associated with a porous release layer that provides thermal insulation with respect to an underlying substrate. If the recrystallized film is removed from the substrate, the substrates can be reused. The methods can be used for large area silicon films with thicknesses from 2 microns to 100 microns, which are suitable for photovoltaic applications as well as electronics applications.

    Abstract translation: ZMR装置提供通过系统的受控温度流动以降低能量消耗，同时提供期望的晶体生长特性。 该装置可以包括冷却系统以从熔融的膜特异性地除去所需量的热量以促进结晶。 此外，该装置可以具有加热的壁以在腔室内产生背景温度，通过减少或消除室壁的冷却来减少能量消耗。 这些装置和相应的方法可以与与提供相对于下面的基底的热绝缘的多孔释放层直接或间接相关联的无机膜一起使用。 如果从衬底去除重结晶膜，则可以重新使用衬底。 该方法可用于厚度为2微米至100微米的大面积硅膜，适用于光伏应用以及电子应用。

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