公开(公告)号：CA2350201A1

公开(公告)日：2000-05-18

申请号：CA2350201

申请日：1999-11-08

Applicant: NANOGRAM CORP

Inventor： HARIKLIA DRIS REITZ ,  HORNE CRAIG R ,  BI XIANGXIN ,  MOSSO RONALD J ,  KAMBE NOBUYUKI ,  GARDNER JAMES T ,  KUMAR SUJEET

IPC: C01G45/00 ,  C01G45/02 ,  C01G45/12 ,  H01M4/02 ,  H01M4/50 ,  H01M4/505 ,  H01M10/052 ,  H01M10/36 ,  A21B2/00 ,  H05B3/10 ,  B01J23/32 ,  A45D20/40

Abstract: Manganese oxide particles and lithium manganese oxide particles have been produced with an average diameter less than about 500 nm. The particles have a high degree of uniformity including a very narrow distribution of particles sizes. Methods are described for producing metal oxides by performing a reaction with an aerosol including a metal precursor. In particular, the particles can be formed by laser pyrolysis. The lithium manganese oxide particles can be formed by the heat treatment of nanoparticles of manganese oxide. Alternatively, lithium manganese oxide particles can be formed direct ly by laser pyrolysis. The lithium manganese oxide particles are useful as acti ve materials in the positive electrodes of lithium based batteries. Improved batteries result from the use of the uniform nanoscale lithium manganese oxi de particles.

公开(公告)号：WO2009094176A2

公开(公告)日：2009-07-30

申请号：PCT/US2009000428

申请日：2009-01-23

Applicant: NANOGRAM CORP ,  BAILEY ROBERT J ,  SANDERS WILLIAM A ,  MOSSO RONALD J ,  HIESLMAIR HENRY ,  MORRIS JULIO E ,  MOGAARD MARTIN E ,  HERNANDEZ JACOB A

Inventor： BAILEY ROBERT J ,  SANDERS WILLIAM A ,  MOSSO RONALD J ,  HIESLMAIR HENRY ,  MORRIS JULIO E ,  MOGAARD MARTIN E ,  HERNANDEZ JACOB A

CPC classification number: C23C16/402 ,  C23C16/56 ,  Y10T156/17 ,  Y10T428/249967

Abstract: Layer transfer approaches are described to take advantage of large area, thin inorganic foils formed onto a porous release layer. In particular, since the inorganic foils can be formed from ceramics and/or crystalline materials that do not bend a large amount, approaches are described to provide for gradual pulling along an edge to separate the foil from a holding surface along a curved surface designed to not excessively bend the foil such that the foil is not substantially damaged in the transfer process. Apparatuses are described to perform the transfer with a rocking motion or with a rotating cylindrical surface. Furthermore, stabilization of porous release layers can improve the qualities of resulting inorganic foils formed on the release layer. In particular, flame treatments can provide improved release layer properties, and the deposition of an interpenetrating stabilization composition can be deposited using CVD to stabilize a porous layer.

Abstract translation: 描述了层转移方法以利用形成在多孔释放层上的大面积的薄无机箔。 特别地，由于无机箔可以由不会大量弯曲的陶瓷和/或结晶材料形成，所以描述了一些方法来提供沿着边缘的逐渐拉伸，以沿着弯曲表面将箔与保持表面分离，所述弯曲表面被设计成 不会使箔过度弯曲，使得箔在转印过程中基本上不被损坏。 描述了用摇摆运动或旋转的圆柱形表面进行传送的装置。 此外，多孔剥离层的稳定化可以提高形成在剥离层上的所得无机箔的质量。 特别地，火焰处理可以提供改善的剥离层性质，并且可以使用CVD沉积互穿稳定化组合物的沉积以稳定多孔层。

公开(公告)号：WO2007106502A3

公开(公告)日：2007-11-29

申请号：PCT/US2007006357

申请日：2007-03-13

Applicant: NANOGRAM CORP ,  HIESMAIR HENRY ,  MOSSO RONALD J ,  LYNCH ROBERT B ,  CHIRUVOLU SHIVKUMAR ,  MCGOVERN WILLIAM E ,  HORNE CRAIG R ,  SOLAYAPPAN NARAYAN ,  CORNELL RONALD M

Inventor： HIESMAIR HENRY ,  MOSSO RONALD J ,  LYNCH ROBERT B ,  CHIRUVOLU SHIVKUMAR ,  MCGOVERN WILLIAM E ,  HORNE CRAIG R ,  SOLAYAPPAN NARAYAN ,  CORNELL RONALD M

IPC: H01L21/20 ,  H01L21/205 ,  H01L21/31

CPC classification number: C23C16/54 ,  C23C16/01 ,  C23C16/24 ,  C23C16/482 ,  C23C16/483 ,  H01L31/0236 ,  H01L31/035281 ,  H01L31/03682 ,  H01L31/0475 ,  H01L31/068 ,  H01L31/18 ,  H01L31/1804 ,  H01L31/1812 ,  H01L31/182 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521 ,  Y10T29/41 ,  Y10T428/14 ,  Y10T428/24802

Abstract: Thin semiconductor foils can be formed using light reactive deposition. These foils can have an average thickness of less than 100 microns. In some embodiments, the semiconductor foils can have a large surface area, such as greater than about 900 square centimeters. The foil can be free standing or releasably held on one surface. The semiconductor foil can comprise elemental silicon, elemental germanium, silicon carbide, doped forms thereof, alloys thereof or mixtures thereof. The foils can be formed using a release layer that can release the foil after its deposition. The foils can be patterned, cut and processed in other ways for the formation of devices. Suitable devices that can be formed form the foils include, for example, photovoltaic modules and display control circuits.

Abstract translation: 可以使用光反应性沉积形成薄的半导体箔。 这些箔片的平均厚度可以小于100微米。 在一些实施例中，半导体箔可以具有大的表面积，例如大于约900平方厘米。 箔可以自由站立或可释放地保持在一个表面上。 半导体箔可以包括元素硅，元素锗，碳化硅，其掺杂形式，其合金或其混合物。 箔可以使用可以在其沉积后释放箔的释放层来形成。 箔可以以其他方式图案化，切割和加工以形成装置。 可以由箔形成的合适的装置包括例如光伏模块和显示控制电路。

公开(公告)号：AU2439902A

公开(公告)日：2002-04-29

申请号：AU2439902

申请日：2001-10-16

Applicant: NANOGRAM CORP

Inventor： BI XIANGXIN ,  MOSSO RONALD J ,  CHIRUVOLU SHIVKUMAR ,  KUMAR SUJEET ,  GARDNER JAMES T ,  LIM SEUNG M ,  MCGOVERN WILLIAM E

IPC: G02B6/13 ,  B05C19/04 ,  B05C19/06 ,  B05D3/06 ,  C23C4/12 ,  C23C16/40 ,  C23C16/44 ,  C23C16/48 ,  C23C24/10 ,  C23C26/02 ,  B05C5/02 ,  B05C11/00 ,  B05D1/04 ,  B05D1/40 ,  B05D3/00 ,  C23C14/28

Abstract: Light reactive deposition uses an intense light beam to form particles that are directly coated onto a substrate surface. In some embodiments, a coating apparatus comprising a noncircular reactant inlet, optical elements forming a light path, a first substrate, and a motor connected to the apparatus. The reactant inlet defines a reactant stream path. The light path intersects the reactant stream path at a reaction zone with a product stream path continuing from the reaction zone. The substrate intersects the product stream path. Also, operation of the motor moves the first substrate relative to the product stream. Various broad methods are described for using light driven chemical reactions to produce efficiently highly uniform coatings.

公开(公告)号：WO2009094124A2

公开(公告)日：2009-07-30

申请号：PCT/US2009000301

申请日：2009-01-16

Applicant: NANOGRAM CORP ,  HIESLMAIR HENRY ,  MOSSO RONALD J

Inventor： HIESLMAIR HENRY ,  MOSSO RONALD J

IPC: H01L21/20

CPC classification number: C30B13/14 ,  C30B29/06 ,  C30B29/08 ,  C30B29/52

Abstract: ZMR apparatuses provide for controlled temperature flow through the system to reduce energy consumption while providing for desired crystal growth properties. The apparatus can include a cooling system to specifically remove a desired amount of heat from a melted film to facilitate crystallization. Furthermore, the apparatus can have heated walls to create a background temperature within the chamber that reduces energy use through the reduction or elimination of cooling for the chamber walls. The apparatuses and corresponding methods can be used with inorganic films directly or indirectly associated with a porous release layer that provides thermal insulation with respect to an underlying substrate. If the recrystallized film is removed from the substrate, the substrates can be reused. The methods can be used for large area silicon films with thicknesses from 2 microns to 100 microns, which are suitable for photovoltaic applications as well as electronics applications.

Abstract translation: ZMR装置提供通过系统的受控温度流动以降低能量消耗，同时提供期望的晶体生长特性。 该装置可以包括冷却系统以从熔融的膜特异性地除去所需量的热量以促进结晶。 此外，该装置可以具有加热的壁以在腔室内产生背景温度，通过减少或消除室壁的冷却来减少能量消耗。 这些装置和相应的方法可以与与提供相对于下面的基底的热绝缘的多孔释放层直接或间接相关联的无机膜一起使用。 如果从衬底去除重结晶膜，则可以重新使用衬底。 该方法可用于厚度为2微米至100微米的大面积硅膜，适用于光伏应用以及电子应用。

公开(公告)号：WO2006127746A3

公开(公告)日：2009-04-16

申请号：PCT/US2006019983

申请日：2006-05-23

Applicant: NANOGRAM CORP ,  CHIRUVOLU SHIVKUMAR ,  DU HUI ,  MCGOVERN WILLIAM E ,  HORNE CRAIG R ,  MOSSO RONALD J ,  KAMBE NOBUYUKI

Inventor： CHIRUVOLU SHIVKUMAR ,  DU HUI ,  MCGOVERN WILLIAM E ,  HORNE CRAIG R ,  MOSSO RONALD J ,  KAMBE NOBUYUKI

IPC: B32B5/16

CPC classification number: B01J19/121 ,  B01J4/002 ,  B01J19/085 ,  B01J19/088 ,  B01J19/123 ,  B01J19/125 ,  B01J19/126 ,  B01J19/127 ,  B01J19/128 ,  B01J19/26 ,  B01J2219/0849 ,  B01J2219/0869 ,  B01J2219/0871 ,  B01J2219/0877 ,  B01J2219/0892 ,  B82Y30/00 ,  C01P2004/04 ,  C01P2004/61 ,  C01P2004/62 ,  C01P2004/64 ,  C01P2006/12 ,  C08J3/12 ,  C08J3/128 ,  C08J2383/02 ,  C09C1/3684 ,  C09C3/10 ,  C09C3/12

Abstract: Collections of composite particles comprise inorganic particles and another composition, such as a polymer and/or a coating composition. In some embodiments, the composite particles have small average particle sizes, such as no more than about 10 microns or no more than about 2.5 microns. The composite particles can have selected particle architectures. The inorganic particles can have compositions selected for particular properties. The composite particles can be effective for printing applications, for the formation of optical coatings, and other desirable applications.

Abstract translation: 复合颗粒的收集包括无机颗粒和另一种组合物，例如聚合物和/或涂料组合物。 在一些实施方案中，复合颗粒具有小的平均粒度，例如不超过约10微米或不大于约2.5微米。 复合颗粒可以具有选定的颗粒结构。 无机颗粒可以具有特定性质的组合物。 复合颗粒可用于印刷应用，用于形成光学涂层和其它期望的应用。

公开(公告)号：WO2008156631A3

公开(公告)日：2009-02-12

申请号：PCT/US2008007330

申请日：2008-06-12

Applicant: NANOGRAM CORP ,  HIESLMAIR HENRY ,  MOSSO RONALD J ,  SOLAYAPPAN NARAYAN ,  CHIRUVOLU SHIVKUMAR ,  MORRIS JULIO E

Inventor： HIESLMAIR HENRY ,  MOSSO RONALD J ,  SOLAYAPPAN NARAYAN ,  CHIRUVOLU SHIVKUMAR ,  MORRIS JULIO E

IPC: C23C16/455 ,  C23C16/00 ,  H01L21/205

CPC classification number: C30B25/02 ,  C23C16/01 ,  C23C16/24 ,  C23C16/545 ,  C30B13/00 ,  C30B25/18 ,  C30B29/06 ,  H01L21/02488 ,  H01L21/02513 ,  H01L21/02532 ,  H01L31/1804 ,  H01L31/1872 ,  H01L31/202 ,  Y02E10/547 ,  Y02P70/521 ,  Y10T428/26 ,  Y10T428/263 ,  Y10T428/264 ,  Y10T428/265

Abstract: Sub-atmospheric pressure chemical vapor deposition is described with a directed reactant flow and a substrate that moves relative to the flow. Thus, using this CVD configuration a relatively high deposition rate can be achieved while obtaining desired levels of coating uniformity. Deposition approaches are described to place one or more inorganic layers onto a release layer, such as a porous, particulate release layer. In some embodiments, the release layer is formed from a dispersion of submicron particles that are coated onto a substrate. The processes described can be effective for the formation of silicon films that can be separated with the use of a release layer into a silicon foil. The silicon foils can be used for the formation of a range of semiconductor based devices, such as display circuits or solar cells.

Abstract translation: 使用定向反应物流和相对于流动移动的基底来描述亚大气压化学气相沉积。 因此，使用这种CVD构造可以获得相当高的沉积速率，同时获得所需的涂层均匀度。 描述沉积方法以将一个或多个无机层置于剥离层上，例如多孔的颗粒脱模层。 在一些实施方案中，释放层由涂覆在基材上的亚微米颗粒的分散体形成。 所描述的方法可以有效地形成可以使用剥离层分离成硅箔的硅膜。 硅箔可用于形成诸如显示电路或太阳能电池的一系列半导体器件。

公开(公告)号：WO2007106502A8

公开(公告)日：2008-10-23

申请号：PCT/US2007006357

申请日：2007-03-13

Applicant: NANOGRAM CORP ,  HIESLMAIR HENRY ,  MOSSO RONALD J ,  LYNCH ROBERT B ,  CHIRUVOLU SHIVKUMAR ,  MCGOVERN WILLIAM E ,  HORNE CRAIG R ,  SOLAYAPPAN NARAYAN ,  CORNELL RONALD M

Inventor： HIESLMAIR HENRY ,  MOSSO RONALD J ,  LYNCH ROBERT B ,  CHIRUVOLU SHIVKUMAR ,  MCGOVERN WILLIAM E ,  HORNE CRAIG R ,  SOLAYAPPAN NARAYAN ,  CORNELL RONALD M

IPC: H01L21/20 ,  H01L21/205 ,  H01L21/31

CPC classification number: C23C16/54 ,  C23C16/01 ,  C23C16/24 ,  C23C16/482 ,  C23C16/483 ,  H01L31/0236 ,  H01L31/035281 ,  H01L31/03682 ,  H01L31/0475 ,  H01L31/068 ,  H01L31/18 ,  H01L31/1804 ,  H01L31/1812 ,  H01L31/182 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521 ,  Y10T29/41 ,  Y10T428/14 ,  Y10T428/24802

Abstract: Thin semiconductor foils can be formed using light reactive deposition. These foils can have an average thickness of less than 100 microns. In some embodiments, the semiconductor foils can have a large surface area, such as greater than about 900 square centimeters. The foil can be free standing or releasably held on one surface. The semiconductor foil can comprise elemental silicon, elemental germanium, silicon carbide, doped forms thereof, alloys thereof or mixtures thereof. The foils can be formed using a release layer that can release the foil after its deposition. The foils can be patterned, cut and processed in other ways for the formation of devices. Suitable devices that can be formed form the foils include, for example, photovoltaic modules and display control circuits.

Abstract translation: 可以使用光反应性沉积形成薄的半导体箔。 这些箔片的平均厚度可以小于100微米。 在一些实施例中，半导体箔可以具有大的表面积，例如大于约900平方厘米。 箔可以自由站立或可释放地保持在一个表面上。 半导体箔可以包括元素硅，元素锗，碳化硅，其掺杂形式，其合金或其混合物。 箔可以使用可以在其沉积后释放箔的释放层来形成。 箔可以以其他方式图案化，切割和加工以形成装置。 可以由箔形成的合适的装置包括例如光伏模块和显示控制电路。

公开(公告)号：WO2004109821A3

公开(公告)日：2005-03-24

申请号：PCT/US2004017793

申请日：2004-06-04

Applicant: NANOGRAM CORP ,  HORNE CRAIG R ,  MCGOVERN WILLIAM E ,  LYNCH ROBERT B ,  MOSSO RONALD J

Inventor： HORNE CRAIG R ,  MCGOVERN WILLIAM E ,  LYNCH ROBERT B ,  MOSSO RONALD J

IPC: C23C16/48 ,  H01M4/86 ,  H01M4/88 ,  H01M4/92 ,  H01M8/02 ,  H01M8/12 ,  H01M8/24 ,  C23C16/00

CPC classification number: C23C16/405 ,  C23C16/403 ,  C23C16/483 ,  C23C18/06 ,  C23C18/1204 ,  C23C18/1216 ,  C23C18/1241 ,  C23C18/14 ,  C23C24/00 ,  C23C26/00 ,  H01M4/8621 ,  H01M4/8885 ,  H01M4/9066 ,  H01M4/92 ,  H01M8/0271 ,  H01M8/1213 ,  H01M8/1246 ,  H01M8/2485 ,  H01M2008/1293 ,  H01M2300/0082 ,  H01M2300/0094 ,  Y02E60/525 ,  Y02P70/56

Abstract: Light reactive deposition can be adapted effectively for the deposition of one or more electrochemical cell components. In particular, electrodes, electrolytes, electrical interconnects c be deposited from a reactive flow. In some embodiments, the reactive flow comprises a reactant stream that intersects a light beam to drive a reaction within a light reactive zone to produce product that is deposited on a substrate (422). The approach is extremely versatile for the production of a range of compositions that are useful in electrochemical cells and fuel cell, in particular. The properties of the materials, including the density and porosity can be adjusted based on the deposition properties and any subsequent processing including, for example, heat treatments.

Abstract translation: 光反应沉积可以有效地适应于一个或多个电化学电池组件的沉积。 特别地，电极，电解质，电互连c从反应流中沉积。 在一些实施例中，反应流包括与光束相交的反应物流，以驱动光反应区内的反应，以产生沉积在基底（422）上的产物。 该方法对于生产可用于电化学电池和燃料电池的一系列组合物是非常通用的。 材料的性质，包括密度和孔隙度可以根据沉积性能和任何后续的加工进行调整，包括例如热处理。

公开(公告)号：AU2003241284A1

公开(公告)日：2003-10-27

申请号：AU2003241284

申请日：2003-04-07

Applicant: NANOGRAM CORP

Inventor： GARDNER JAMES T ,  MOSSO RONALD J ,  GILLIAM JAMES A

IPC: B01J19/12 ,  B01J19/26 ,  B01J19/08

Abstract: Improved reaction chamber designs are described that provide for improved control over the flow within the reaction chamber. The reaction chambers contain reactions for particle production from a flowing reactant stream. Improved reactant delivery nozzles are described that are useful for the delivery of gas/vapor reactants and/or aerosol reactants. Improved nozzle designs can result in more uniform reactant flow. Suitable reactors can comprise an electromagnetic radiation source that projects through the reactor to drive the reaction at an electromagnetic radiation reaction zone. The improved nozzle features are suitable for reactors for particle collection and/or for coating of substrates within the reaction chamber.