公开(公告)号：WO2010135153A3

公开(公告)日：2011-03-10

申请号：PCT/US2010034762

申请日：2010-05-13

Applicant: NANOGRAM CORP ,  SRINIVASAN UMA ,  ZHOU XIN ,  HIESLMAIR HENRY ,  PAKALA NEERAJ

Inventor： SRINIVASAN UMA ,  ZHOU XIN ,  HIESLMAIR HENRY ,  PAKALA NEERAJ

IPC: H01L31/042

CPC classification number: H01L21/22 ,  H01L21/2255 ,  H01L21/228 ,  H01L21/268 ,  H01L31/022441 ,  H01L31/0682 ,  Y02E10/547

Abstract: Laser based processes are used alone or in combination to effectively process doped domains for semiconductors and/or current harvesting structures. For example, dopants can be driven into a silicon/germanium semiconductor layer from a bare silicon/ germanium surface using a laser beam. Deep contacts have been found to be effective for producing efficient solar cells. Dielectric layers can be effectively patterned to provide for selected contact between the current collectors and the doped domains along the semiconductor surface. Rapid processing approaches are suitable for efficient production processes.

Abstract translation: 基于激光的工艺单独使用或组合使用以有效地处理半导体和/或当前采集结构的掺杂域。 例如，掺杂剂可以使用激光束从裸硅/锗表面驱动到硅/锗半导体层中。 已经发现深层接触对于生产高效太阳能电池是有效的。 电介质层可以被有效地构图以提供集电器和沿着半导体表面的掺杂区域之间的选择的接触。 快速处理方法适用于高效的生产工艺。

公开(公告)号：WO2013066669A3

公开(公告)日：2013-08-01

申请号：PCT/US2012061456

申请日：2012-10-23

Applicant: NANOGRAM CORP ,  LIU GUOJUN ,  CHIRUVOLU SHIVKUMAR ,  LI WEIDONG ,  SRINIVASAN UMA

Inventor： LIU GUOJUN ,  CHIRUVOLU SHIVKUMAR ,  LI WEIDONG ,  SRINIVASAN UMA

IPC: H01L21/20 ,  H01L21/205

CPC classification number: H01L29/04 ,  H01L21/02104 ,  H01L21/02532 ,  H01L21/0259 ,  H01L21/02601 ,  H01L21/0262 ,  H01L21/02628 ,  H01L21/2225 ,  H01L21/2257 ,  H01L21/67115 ,  H01L31/028 ,  H01L31/035218 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: Silicon nanoparticle inks provide a basis for the formation of desirable materials. Specifically, composites have been formed in thin layers comprising silicon nanoparticles embedded in an amorphous silicon matrix, which can be formed at relatively low temperatures. The composite material can be heated to form a nanocrystalline material having crystals that are non-rod shaped. The nanocrystalline material can have desirable electrical conductive properties, and the materials can be formed with a high dopant level. Also, nanocrystalline silicon pellets can be formed from silicon nanoparticles deposited form an ink in which the pellets can be relatively dense although less dense than bulk silicon. The pellets can be formed from the application of pressure and heat to a silicon nanoparticle layer.

Abstract translation: 硅纳米颗粒油墨为形成所需材料提供了基础。 具体而言，复合材料已经形成在包含嵌入非晶硅基质中的硅纳米颗粒的薄层中，所述硅纳米颗粒可以在相对低的温度下形成。 可以加热复合材料以形成具有非棒形晶体的纳米晶体材料。 纳米晶体材料可以具有期望的导电性质，并且可以以高掺杂剂水平形成材料。 而且，纳米晶硅颗粒可以由沉积在墨水中的硅纳米颗粒形成，其中颗粒可以是相对致密的，但是比体硅的密度小。 可以通过将压力和热量施加到硅纳米颗粒层来形成颗粒。

公开(公告)号：WO2012006071A3

公开(公告)日：2012-04-19

申请号：PCT/US2011042142

申请日：2011-06-28

Applicant: NANOGRAM CORP ,  CHIRUVOLU SHIVKUMAR ,  ALTMAN IGOR ,  FREY BERNARD M ,  LI WEIDONG ,  LIU GUOJUN ,  LYNCH ROBERT B ,  PENGRA-LEUNG GINA ELIZABETH ,  SRINIVASAN UMA

Inventor： CHIRUVOLU SHIVKUMAR ,  ALTMAN IGOR ,  FREY BERNARD M ,  LI WEIDONG ,  LIU GUOJUN ,  LYNCH ROBERT B ,  PENGRA-LEUNG GINA ELIZABETH ,  SRINIVASAN UMA

IPC: B01J13/00 ,  B01J19/08 ,  C01B33/02 ,  C01G17/00 ,  C09D11/00

CPC classification number: C09D11/38 ,  B01D21/262 ,  B01J19/121 ,  B01J2219/0869 ,  B01J2219/0871 ,  B01J2219/0875 ,  B82Y30/00 ,  C01B33/02 ,  C08K3/08 ,  C08K3/36 ,  C08K9/02 ,  C09D5/24 ,  C09D7/67 ,  C09D7/68 ,  C09D7/80 ,  C09D11/037 ,  C09D11/101 ,  C09D11/322 ,  C09D11/36 ,  C09D11/52 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/02579 ,  H01L21/02581 ,  H01L21/02601 ,  H01L21/02628 ,  H01L23/4828 ,  H01L23/53276 ,  H01L31/00 ,  H01L31/02363 ,  H01L31/03682 ,  H01L31/03762 ,  H01L31/0747 ,  H01L31/182 ,  H01L31/1864 ,  H01L2924/0002 ,  Y02E10/52 ,  Y02E10/546 ,  Y02E10/548 ,  Y02P70/521 ,  H01L2924/00

Abstract: Laser pyrolysis reactor designs and corresponding reactant inlet nozzles are described to provide desirable particle quenching that is particularly suitable for the synthesis of elemental silicon particles. In particular, the nozzles can have a design to encourage nucleation and quenching with inert gas based on a significant flow of inert gas surrounding the reactant precursor flow and with a large inert entrainnient flow effectively surrounding the reactant precursor and quench gas flows. Improved silicon nanoparticle inks are described that has silicon nanoparticles without any surface modification with organic compounds. The silicon ink properties can be engineered for particular printing applications, such as inkjet printing, gravure printing or screen printing. Appropriate processing methods are described to provide flexibility for ink designs without surface modifying the silicon nanoparticles.

Abstract translation: 描述了激光热解反应器设计和相应的反应物入口喷嘴以提供特别适用于元素硅颗粒的合成的期望的颗粒猝灭。 特别地，基于围绕反应物前体流的大量惰性气体以及有效围绕反应物前体和骤冷气体流的大的惰性夹带流，喷嘴可以具有鼓励用惰性气体进行成核和淬火的设计。 描述了改进的硅纳米粒子油墨，其具有硅纳米粒子而没有用有机化合物进行任何表面改性。 硅油墨特性可以针对特定的印刷应用进行设计，例如喷墨印刷，凹版印刷或丝网印刷。 描述了适当的处理方法，为墨水设计提供了灵活性，而没有表面修饰硅纳米颗粒。

公开(公告)号：WO2011035306A3

公开(公告)日：2011-10-06

申请号：PCT/US2010049661

申请日：2010-09-21

Applicant: NANOGRAM CORP ,  LIU GUOJUN ,  MORRIS CLIFFORD M ,  ALTMAN IGOR ,  SRINIVASAN UMA ,  CHIRUVOLU SHIVKUMAR

Inventor： LIU GUOJUN ,  MORRIS CLIFFORD M ,  ALTMAN IGOR ,  SRINIVASAN UMA ,  CHIRUVOLU SHIVKUMAR

IPC: H01L31/042 ,  H01L31/0216

CPC classification number: H01L31/068 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/02601 ,  H01L21/02628 ,  H01L31/03682 ,  H01L31/03762 ,  H01L31/075 ,  H01L31/076 ,  H01L31/182 ,  H01L31/202 ,  Y02E10/546 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

Abstract: High quality silicon inks are used to form polycrystalline layers within thin film solar cells having a p-n junction. The particles deposited with the inks can be sintered to form the silicon film, which can be intrinsic films or doped films. The silicon inks can have a z- average secondary particle size of no more than about 250 nm as determined by dynamic light scattering on an ink sample diluted to 0.4 weight percent if initially having a greater concentration. In some embodiments, an intrinsic layer can be a composite of an amorphous silicon portion and a crystalline silicon portion.

Abstract translation: 高质量的硅油墨用于在具有p-n结的薄膜太阳能电池内形成多晶硅层。 沉积有油墨的颗粒可以被烧结以形成硅膜，其可以是本征膜或掺杂膜。 如通过初始具有较高浓度稀释至0.4重量％的油墨样品上的动态光散射确定的，硅油墨可具有不超过约250nm的z-平均二次粒度。 在一些实施例中，本征层可以是非晶硅部分和晶体硅部分的复合物。

公开(公告)号：WO2012106137A3

公开(公告)日：2012-10-18

申请号：PCT/US2012022215

申请日：2012-01-23

Applicant: NANOGRAM CORP ,  LIU GUOJUN ,  SRINIVASAN UMA ,  CHIRUVOLU SHIVKUMAR

Inventor： LIU GUOJUN ,  SRINIVASAN UMA ,  CHIRUVOLU SHIVKUMAR

IPC: H01L31/042 ,  H01L31/0216 ,  H01L31/18

CPC classification number: H01L21/2252 ,  B82Y30/00 ,  H01L21/2225 ,  H01L21/228 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

Abstract: The use of doped silicon nanoparticle inks and other liquid dopant sources can provide suitable dopant sources for driving dopant elements into a crystalline silicon substrate using a thermal process if a suitable cap is provided. Suitable caps include, for example, a capping slab, a cover that may or may not rest on the surface of the substrate and a cover layer. Desirable dopant profiled can be achieved. The doped nanoparticles can be delivered using a silicon ink. The residual silicon ink can be removed after the dopant drive-in or at least partially densified into a silicon material that is incorporated into the product device. The silicon doping is suitable for the introduction of dopants into crystalline silicon for the formation of solar cells.

Abstract translation: 如果提供合适的帽，则使用掺杂硅纳米粒子墨水和其他液体掺杂剂源可以提供合适的掺杂剂源，用于使用热过程将掺杂剂元素驱动到晶体硅衬底中。 合适的盖子包括例如盖板，可以或不可以搁置在基底表面上的盖子和覆盖层。 可以实现期望的掺杂剂轮廓。 掺杂的纳米粒子可以使用硅油墨输送。 在掺杂剂推入之后或者至少部分致密化为结合到产品装置中的硅材料之后，可以去除残留的硅油墨。 硅掺杂适合于将掺杂剂引入晶体硅中以形成太阳能电池。

公开(公告)号：WO2010135178A3

公开(公告)日：2011-02-03

申请号：PCT/US2010034860

申请日：2010-05-14

Applicant: NANOGRAM CORP ,  SRINIVASAN UMA ,  PAKALA NEERAJ ,  SANDERS WILLIAM A ,  HIESLMAIR HENRY

Inventor： SRINIVASAN UMA ,  PAKALA NEERAJ ,  SANDERS WILLIAM A ,  HIESLMAIR HENRY

IPC: H01L31/042 ,  H01L31/18

CPC classification number: C22F1/00 ,  C21D1/34 ,  H01L21/32134 ,  H01L27/124 ,  H01L31/022441 ,  H01L31/0682 ,  Y02E10/547 ,  Y10T428/12396

Abstract: Layered metal structures are patterned to form a surface with some locations having an alloy along the top surface at some locations and the original top metal layer at other locations along the surface. The alloy and original top metal layer can be selected to have differential etching properties such that the pattern of the alloy or original metal can be selectively etched to form a patterned metal interconnect. In general, the patterning is performed by localized heating that drives formation of the alloy at the heated locations. The metal patterning can be useful for solar cell applications as well as for electronics applications, such as display applications.

Abstract translation: 层状金属结构被图案化以形成表面，其中一些位置在某些位置处具有沿着顶表面的合金，并且沿表面的其它位置具有原始顶部金属层。 可以选择合金和原始顶部金属层以具有差异蚀刻性质，使得可以选择性地蚀刻合金或原始金属的图案以形成图案化的金属互连。 通常，图案化是通过局部加热进行的，其驱动在加热位置形成合金。 金属图案化可用于太阳能电池应用以及电子应用，例如显示器应用。

公开(公告)号：MY162622A

公开(公告)日：2017-06-30

申请号：MYPI2012701276

申请日：2011-06-28

Applicant: NANOGRAM CORP

Inventor： CHIRUVOLU SHIVKUMAR ,  ALTMAN IGOR ,  FREY BERNARD M ,  LI WEIDONG ,  LIU GUOJUN ,  LYNCH ROBERT B ,  PENGRA-LEUNG GINA ELIZABETH ,  SRINIVASAN UMA

IPC: H01L51/00 ,  C09D5/24 ,  C09D7/80

Abstract: LASER PYROLYSIS REACTOR DESIGNS AND CORRESPONDING REACTANT INLET NOZZLES ARE DESCRIBED TO PROVIDE DESIRABLE PARTICLE QUENCHING THAT IS PARTICULARLY SUITABLE FOR THE SYNTHESIS OF ELEMENTAL SILICON PARTICLES. IN PARTICULAR, THE NOZZLES CAN HAVE A DESIGN TO ENCOURAGE NUCLEATION AND QUENCHING WITH INERT GAS BASED ON A SIGNIFICANT FLOW OF INERT GAS SURROUNDING THE REACTANT PRECURSOR FLOW AND WITH A LARGE INERT ENTRAINMENT FLOW EFFECTIVELY SURROUNDING THE REACTANT PRECURSOR AND QUENCH GAS FLOWS. IMPROVED SILICON NANOPARTICLE INKS ARE DESCRIBED THAT HAS SILICON NANOPARTICLES WITHOUT ANY SURFACE MODIFICATION WITH ORGANIC COMPOUNDS. THE SILICON INK PROPERTIES CAN BE ENGINEERED FOR PARTICULAR PRINTING APPLICATIONS, SUCH AS INKJET PRINTING, GRAVURE PRINTING OR SCREEN PRINTING. APPROPRIATE PROCESSING METHODS ARE DESCRIBED TO PROVIDE FLEXIBILITY FOR INK DESIGNS WITHOUT SURFACE MODIFYING THE SILICON NANOPARTICLES.

公开(公告)号：MY160606A

公开(公告)日：2017-03-15

申请号：MYPI2013701297

申请日：2012-01-23

Applicant: NANOGRAM CORP

Inventor： LIU GUOJUN ,  SRINIVASAN UMA ,  CHIRUVOLU SHIVKUMAR

IPC: H01L21/22 ,  B82Y30/00 ,  H01L21/02 ,  H01L21/225 ,  H01L21/228 ,  H01L21/38 ,  H01L31/068 ,  H01L31/18

Abstract: The use of doped silicon nanoparticle inks and other liquid dopant sources can provide suitable dopant sources for driving dopant elements into a crystalline silicon substrate (240) using a thermal process if a suitable cap is provided. Suitable caps include, for example, a capping slab, a cover that may or may not rest on the surface of the substrate and a cover layer. Desirable dopant profiled can be achieved. The doped nanoparticles can be delivered using a silicon ink. The residual silicon ink can be removed after the dopant drive-in or at least partially densified into a silicon material that is incorporated into the product device. The silicon doping is suitable for the introduction of dopants into crystalline silicon for the formation of solar cells.

公开(公告)号：SG186489A1

公开(公告)日：2013-01-30

申请号：SG2012096665

申请日：2011-06-28

Applicant: NANOGRAM CORP

Inventor： CHIRUVOLU SHIVKUMAR ,  ALTMAN IGOR ,  FREY BERNARD M ,  LI WEIDONG ,  LIU GUOJUN ,  LYNCH ROBERT B ,  PENGRA-LEUNG GINA ELIZABETH ,  SRINIVASAN UMA

IPC: C09D7/80

Abstract: Laser pyrolysis reactor designs and corresponding reactant inlet nozzles are described to provide desirable particle quenching that is particularly suitable for the synthesis of elemental silicon particles. In particular, the nozzles can have a design to encourage nucleation and quenching with inert gas based on a significant flow of inert gas surrounding the reactant precursor flow and with a large inert entrainment flow effectively surrounding the reactant precursor and quench gas flows. Improved silicon nanoparticle inks are described that has silicon nanoparticles without any surface modification with organic compounds. The silicon ink properties can be engineered for particular printing applications, such as inkjet printing, gravure printing or screen printing. Appropriate processing methods are described to provide flexibility for ink designs without surface modifying the silicon nanoparticles.

公开(公告)号：EP2804912A4

公开(公告)日：2015-12-09

申请号：EP12865642

申请日：2012-12-28

Applicant: NANOGRAM CORP

Inventor： LI WEIDONG ,  PENGRA-LEUNG GINA ELIZABETH ,  SRINIVASAN UMA ,  CHIRUVOLU SHIVKUMAR ,  SOEDA MASAYA ,  LIU GUOJUN

IPC: C09D11/00 ,  B82Y30/00 ,  C09D11/10 ,  H01L21/20 ,  H05K1/02

CPC classification number: H01L21/02381 ,  B82Y30/00 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02601 ,  H01L21/02628