公开(公告)号：US20230061312A1

公开(公告)日：2023-03-02

申请号：US17465328

申请日：2021-09-02

Applicant: NANYA TECHNOLOGY CORPORATION

Inventor： WEI-ZHONG LI ,  YI-TING SHIH ,  CHIEN-CHUNG WANG ,  HSIH-YANG CHIU

IPC: H01L23/00

Abstract: A method for preparing a semiconductor device includes providing an integrated circuit die having a bond pad. The bond pad includes aluminum (Al). The method also includes etching a top portion of the bond pad to form a recess, and bonding a wire bond to the recess in the bond pad. The wire bond includes copper (Cu).

公开(公告)号：US20190295979A1

公开(公告)日：2019-09-26

申请号：US15934486

申请日：2018-03-23

Applicant: NANYA TECHNOLOGY CORPORATION

Inventor： CHIEN-CHUNG WANG

IPC: H01L23/00 ,  H01L23/498 ,  H01L23/532 ,  H01L25/00

Abstract: The present disclosure provides a flip chip structure comprising a substrate, a bond pad, a passivation layer surrounding the bond pad, a first solder bump and a second solder bump. The first solder bump includes a first pillar formed on the bond pad and an adjacent portion of the passivation layer and extending in a vertical direction, a first coated layer fittingly formed on the first pillar, and a first solder ball formed on the first coated layer. The second solder bump includes a second pillar formed on a portion of the passivation layer and extending in the vertical direction, a second coated layer fittingly formed on the second pillar, and a second solder ball formed on the second coated layer. The first pillar includes a depression formed in the shape of an inverted cone and formed in a top surface of the first pillar.

公开(公告)号：US20240063175A1

公开(公告)日：2024-02-22

申请号：US18386345

申请日：2023-11-02

Applicant: NANYA TECHNOLOGY CORPORATION

Inventor： WEI-ZHONG LI ,  YI-TING SHIH ,  CHIEN-CHUNG WANG ,  HSIH-YANG CHIU

IPC: H01L23/00

CPC classification number: H01L24/85 ,  H01L24/48 ,  H01L24/03 ,  H01L24/05 ,  H01L2224/85359 ,  H01L2224/85031 ,  H01L2224/04042 ,  H01L2224/03831 ,  H01L2224/48824

Abstract: A method for preparing a semiconductor device includes providing an integrated circuit die having a bond pad. The bond pad includes aluminum (Al). The method also includes etching a top portion of the bond pad to form a recess, and bonding a wire bond to the recess in the bond pad. The wire bond includes copper (Cu).