公开(公告)号：US11482525B2

公开(公告)日：2022-10-25

申请号：US17129063

申请日：2020-12-21

Applicant: NANYA TECHNOLOGY CORPORATION

Inventor： Chih-Hung Chen

IPC: H01L27/108 ,  G11C5/10

Abstract: The present disclosure provides a method for manufacturing a semiconductor structure with capacitor landing pads. The method includes the following operations: providing a semiconductor substrate; forming a bit line structure protruding from the semiconductor substrate; depositing a landing pad layer to cover the bit line structure; planarizing a top surface of the landing pad layer; limning a trench in the landing pad layer to form the capacitor landing pads; forming an air gap within a sidewall of the bit line structure; and filling a first dielectric layer in the trench to seal the air gap.

公开(公告)号：US11469231B2

公开(公告)日：2022-10-11

申请号：US17071444

申请日：2020-10-15

Applicant: NANYA TECHNOLOGY CORPORATION

Inventor： Chiang-Lin Shih ,  Chih-Hung Chen ,  Szu-Yao Chang

IPC: H01L27/108

Abstract: The present application discloses a semiconductor device with a protruding contact and a method for fabricating the semiconductor device with the protruding contact. The semiconductor device includes a substrate, a capacitor contact structure protruding from the substrate, and a landing pad layer covering a portion of a top surface of the capacitor contact structure and an upper portion of a sidewall of the capacitor contact structure.

公开(公告)号：US11574911B2

公开(公告)日：2023-02-07

申请号：US17544663

申请日：2021-12-07

Applicant: NANYA TECHNOLOGY CORPORATION

Inventor： Chiang-Lin Shih ,  Chih-Hung Chen ,  Szu-Yao Chang

IPC: H01L27/108

Abstract: The present application discloses a method for fabricating a semiconductor device with a protruding contact. The method includes providing a substrate; forming a bit line structure on the substrate; forming a capacitor contact structure next to the bit line structure; recessing a top surface of the bit line structure; and forming a landing pad layer covering a portion of a top surface of the capacitor contact structure and an upper portion of a sidewall of the capacitor contact structure.