公开(公告)号：US20240347461A1

公开(公告)日：2024-10-17

申请号：US18755686

申请日：2024-06-27

Applicant: NANYA TECHNOLOGY CORPORATION

Inventor： Chun-Wei WANG ,  Jen-I LAI ,  Rou-Wei WANG

IPC: H01L23/532 ,  H01L21/311 ,  H01L21/768 ,  H01L23/522

CPC classification number: H01L23/53238 ,  H01L21/31111 ,  H01L21/76802 ,  H01L21/76829 ,  H01L21/76877 ,  H01L23/5226

Abstract: A method of manufacturing a semiconductor structure includes a number of operations. A first oxide layer is provided on a semiconductor integrated circuit. A conductive layer of the semiconductor integrated circuit is exposed from a top surface of the first oxide layer. An etch stop layer is formed on the top surface of the first oxide layer. A second oxide layer is formed on the etch stop layer. A through via is formed extending through the second oxide layer and the etch stop layer to expose the conductive layer. Acid is provided on the conductive layer to form a protective layer on the conductive layer. The protective layer includes a compound of the acid and material of the conductive layer. A fence of the second oxide layer at an edge on the through via is removed at the through via by a hydrofluoric acid etching.