公开(公告)号：EP3144964A4

公开(公告)日：2017-11-15

申请号：EP15792649

申请日：2015-05-14

Applicant: NAT INST FOR MATERIALS SCIENCE

Inventor： KAWAKITA JIN ,  HORVATH BARBARA ,  CHIKYO TOYOHIRO

IPC: H01L21/3205 ,  C01B21/082 ,  C08G61/12 ,  C08K3/08 ,  C08L65/00 ,  H01L21/768 ,  H01L23/48 ,  H01L23/522 ,  H01L23/532 ,  H01L23/538 ,  H01L25/065 ,  H01L25/07 ,  H01L25/18 ,  H01L27/12 ,  H01L29/792 ,  H01Q9/27 ,  H01Q9/38

CPC classification number: H01L23/5384 ,  C01B21/0823 ,  C01P2006/40 ,  C08G61/124 ,  C08G2261/3221 ,  C08G2261/51 ,  C08K3/08 ,  C08K2003/0806 ,  C08L65/00 ,  H01L21/3205 ,  H01L21/768 ,  H01L21/76846 ,  H01L21/76879 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/522 ,  H01L23/532 ,  H01L23/5386 ,  H01L25/065 ,  H01L25/0657 ,  H01L25/07 ,  H01L25/18 ,  H01L27/12 ,  H01L28/00 ,  H01L29/792 ,  H01L2225/06544 ,  H01L2924/0002 ,  H01L2924/00

Abstract: By using silicon oxynitride with an oxygen content of 4.2 to 37.5 at% as a material for a barrier layer, adhesiveness similar to that of silicon oxide and an Ag diffusion prevention property similar to that of silicon nitride can be realized. In particular, in a semiconductor device in which a plurality of silicon chips is vertically stacked by through-silicon vias, Ag is prevented from being diffused into Si and adhesiveness to Si becomes favorable when an Ag/polypyrrole complex is used as a conductive filling material used for the formation of a barrier layer provided on the inner surface of the via.

公开(公告)号：EP2911159A4

公开(公告)日：2016-04-06

申请号：EP13848557

申请日：2013-10-21

Applicant: NAT INST FOR MATERIALS SCIENCE

Inventor： KAWAKITA JIN ,  CHIKYO TOYOHIRO ,  HASHIMOTO YASUO ,  HORVATH BARBARA

IPC: H01B1/00 ,  B05D1/26 ,  B05D5/12 ,  B32B27/00 ,  C08G73/02 ,  C08K3/08 ,  C08L65/00 ,  C08L79/02 ,  C09D17/00 ,  C09D201/00 ,  C09J165/00 ,  H01B1/22 ,  H01B5/14 ,  H01L21/768

CPC classification number: H05K1/095 ,  C08G73/0266 ,  C08G2261/3221 ,  C08G2261/3223 ,  C08G2261/43 ,  C08G2261/964 ,  C08K3/08 ,  C08L65/00 ,  C08L79/02 ,  C09D17/00 ,  C09D201/00 ,  C09J7/02 ,  C09J7/20 ,  C09J165/00 ,  C09J2205/102 ,  C09J2465/00 ,  H01B1/22 ,  H01L21/76898 ,  H01L23/49883 ,  H05K1/097 ,  H05K3/4069 ,  H05K2201/032 ,  Y10T428/24339

Abstract: A conductive polymer-metal complex becomes to be adhered simply and strongly on the surface of a substrate such as PTFE. By subjecting a solution containing a monomer which provides a conductive polymer, an anion, and a metal ions such as Ag + , Cu 2+ , Cu + and the like to an irradiation with light having an energy required for exciting an electron to an energy level capable of reducing the metal ion, such as ultraviolet light, under an appropriated condition, thereby precipitating the conductive polymer-metal complex as being dispersed in the reaction liquid. By supplying this dispersion liquid onto various substrates, the complex microparticles in the dispersion liquid enter into and mate with the narrow holes on the surface of the substrate. As a result, the complex precipitate formed on the surface of the substrate and the substrate can be adhered strongly to each other.