公开(公告)号：EP2330229A4

公开(公告)日：2012-04-11

申请号：EP09814704

申请日：2009-09-24

Applicant: NAT INST FOR MATERIALS SCIENCE

Inventor： KURODA SEIJI ,  ZENG ZHEN SU ,  KAWAKITA JIN ,  MURAKAMI HIDEYUKI ,  KOMATSU MASAYUKI

IPC: C23C4/06

CPC classification number: C23C4/06 ,  C23C4/067

公开(公告)号：EP2740751A4

公开(公告)日：2015-01-21

申请号：EP12820585

申请日：2012-07-27

Applicant: NAT INST FOR MATERIALS SCIENCE

Inventor： KAWAKITA JIN ,  CHIKYO TOYOHIRO

IPC: C08G61/12 ,  C08G73/00 ,  C08G73/02 ,  C08K3/00 ,  C08K3/08 ,  C08L65/00 ,  H01B1/02 ,  H01B1/12 ,  H01B13/00 ,  H01L51/00 ,  H01L51/30 ,  H05K1/09 ,  H05K3/10

CPC classification number: H01B1/124 ,  C08G61/124 ,  C08G61/126 ,  C08G73/0266 ,  C08G2261/3221 ,  C08G2261/3223 ,  C08K3/08 ,  C08K2003/0806 ,  C08K2201/011 ,  H01B1/127 ,  H01B1/128 ,  H01L51/0027 ,  H01L51/0036 ,  H01L51/0091 ,  H01L51/4213 ,  H05K1/092 ,  H05K3/106 ,  H05K2201/0329 ,  H05K2201/10143 ,  H05K2203/1157 ,  Y10T428/2927 ,  Y10T428/2958 ,  C08L65/00

Abstract: The invention has for its object to provide a process of producing a conducting material suitable for being filled in TSVs for LSI chip 3D package, etc. A solution containing a monomer that provides a conducting polymer, anions, and metal ions such as Ag + or Cu 2+ is irradiated with ultraviolet radiation or light having the energy necessary for exciting electrons up to an energy level capable of reducing the metal ions to precipitate a conducting polymer/metal composite. This enables an electrical conductor of high electrical conductivity to be precipitated faster than could be achieved by conventional processes.

公开(公告)号：EP2403006A4

公开(公告)日：2014-04-02

申请号：EP10746343

申请日：2010-02-26

Applicant: NAT INST FOR MATERIALS SCIENCE

Inventor： KAWAKITA JIN

IPC: H01L31/04 ,  H01B13/00 ,  H01L29/12 ,  H01L29/861 ,  H01L31/0352 ,  H01L51/00 ,  H01L51/05 ,  H01L51/42

CPC classification number: H01L51/422 ,  H01L29/12 ,  H01L29/861 ,  H01L31/035281 ,  H01L51/0006 ,  H01L51/0036 ,  H01L51/426 ,  Y02E10/549 ,  Y02P70/521

公开(公告)号：EP2172278A4

公开(公告)日：2011-12-28

申请号：EP08791143

申请日：2008-07-14

Applicant: NAT INST FOR MATERIALS SCIENCE

Inventor： KAWAKITA JIN ,  KURODA SEIJI ,  KOMATSU MASAYUKI

IPC: B05D1/10 ,  B05B7/20 ,  C23C4/04

CPC classification number: C09D123/06 ,  B05B7/205 ,  B05D1/10 ,  C23C4/04 ,  Y10T428/24355 ,  Y10T428/24364

公开(公告)号：EP3144964A4

公开(公告)日：2017-11-15

申请号：EP15792649

申请日：2015-05-14

Applicant: NAT INST FOR MATERIALS SCIENCE

Inventor： KAWAKITA JIN ,  HORVATH BARBARA ,  CHIKYO TOYOHIRO

IPC: H01L21/3205 ,  C01B21/082 ,  C08G61/12 ,  C08K3/08 ,  C08L65/00 ,  H01L21/768 ,  H01L23/48 ,  H01L23/522 ,  H01L23/532 ,  H01L23/538 ,  H01L25/065 ,  H01L25/07 ,  H01L25/18 ,  H01L27/12 ,  H01L29/792 ,  H01Q9/27 ,  H01Q9/38

CPC classification number: H01L23/5384 ,  C01B21/0823 ,  C01P2006/40 ,  C08G61/124 ,  C08G2261/3221 ,  C08G2261/51 ,  C08K3/08 ,  C08K2003/0806 ,  C08L65/00 ,  H01L21/3205 ,  H01L21/768 ,  H01L21/76846 ,  H01L21/76879 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/522 ,  H01L23/532 ,  H01L23/5386 ,  H01L25/065 ,  H01L25/0657 ,  H01L25/07 ,  H01L25/18 ,  H01L27/12 ,  H01L28/00 ,  H01L29/792 ,  H01L2225/06544 ,  H01L2924/0002 ,  H01L2924/00

Abstract: By using silicon oxynitride with an oxygen content of 4.2 to 37.5 at% as a material for a barrier layer, adhesiveness similar to that of silicon oxide and an Ag diffusion prevention property similar to that of silicon nitride can be realized. In particular, in a semiconductor device in which a plurality of silicon chips is vertically stacked by through-silicon vias, Ag is prevented from being diffused into Si and adhesiveness to Si becomes favorable when an Ag/polypyrrole complex is used as a conductive filling material used for the formation of a barrier layer provided on the inner surface of the via.

公开(公告)号：EP3054351A4

公开(公告)日：2017-05-10

申请号：EP14847270

申请日：2014-09-25

Applicant: NAT INST FOR MATERIALS SCIENCE

Inventor： KAWAKITA JIN ,  CHIKYO TOYOHIRO ,  NAKANE TAKAYUKI

IPC: G03F7/09 ,  G03F7/11 ,  H01L21/027

CPC classification number: G03F7/11 ,  G03F7/091 ,  G03F7/20 ,  G03F7/32 ,  H01L21/0274 ,  H01L21/0277 ,  H01L21/0278

Abstract: A resist film structure is provided, which allows a resist layer to have improved photosensitivity to EUV or electron beams without changing the photosensitivity of the resist material itself. A metal layer 1 with a thickness as small as a nanometer level is provided on a resist polymer layer 2 formed on a substrate 3. When the resist layer in this structure is exposed to light, the metal layer 1 produces a surface plasmon effect to enhance the irradiation to the resist film, so that the photosensitivity of the resist film is improved.

Abstract translation: 提供抗蚀剂膜结构，其允许抗蚀剂层具有改进的对EUV或电子束的光敏性，而不改变抗蚀剂材料本身的光敏性。 在形成于基板3上的抗蚀剂聚合物层2上设置厚度小至纳米级的金属层1.当该结构中的抗蚀剂层曝光时，金属层1产生表面等离子体激元效应以增强 对抗蚀剂膜的照射，使得抗蚀剂膜的光敏性提高。

公开(公告)号：EP2911159A4

公开(公告)日：2016-04-06

申请号：EP13848557

申请日：2013-10-21

Applicant: NAT INST FOR MATERIALS SCIENCE

Inventor： KAWAKITA JIN ,  CHIKYO TOYOHIRO ,  HASHIMOTO YASUO ,  HORVATH BARBARA

IPC: H01B1/00 ,  B05D1/26 ,  B05D5/12 ,  B32B27/00 ,  C08G73/02 ,  C08K3/08 ,  C08L65/00 ,  C08L79/02 ,  C09D17/00 ,  C09D201/00 ,  C09J165/00 ,  H01B1/22 ,  H01B5/14 ,  H01L21/768

CPC classification number: H05K1/095 ,  C08G73/0266 ,  C08G2261/3221 ,  C08G2261/3223 ,  C08G2261/43 ,  C08G2261/964 ,  C08K3/08 ,  C08L65/00 ,  C08L79/02 ,  C09D17/00 ,  C09D201/00 ,  C09J7/02 ,  C09J7/20 ,  C09J165/00 ,  C09J2205/102 ,  C09J2465/00 ,  H01B1/22 ,  H01L21/76898 ,  H01L23/49883 ,  H05K1/097 ,  H05K3/4069 ,  H05K2201/032 ,  Y10T428/24339

Abstract: A conductive polymer-metal complex becomes to be adhered simply and strongly on the surface of a substrate such as PTFE. By subjecting a solution containing a monomer which provides a conductive polymer, an anion, and a metal ions such as Ag + , Cu 2+ , Cu + and the like to an irradiation with light having an energy required for exciting an electron to an energy level capable of reducing the metal ion, such as ultraviolet light, under an appropriated condition, thereby precipitating the conductive polymer-metal complex as being dispersed in the reaction liquid. By supplying this dispersion liquid onto various substrates, the complex microparticles in the dispersion liquid enter into and mate with the narrow holes on the surface of the substrate. As a result, the complex precipitate formed on the surface of the substrate and the substrate can be adhered strongly to each other.