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公开(公告)号:JP2002121013A
公开(公告)日:2002-04-23
申请号:JP2000312642
申请日:2000-10-12
Applicant: NAT INST FOR MATERIALS SCIENCE
Inventor: SEKINE TOSHIMORI , GA KORYO , KOBAYASHI HIROMICHI , MITOMO MAMORU
IPC: B01J3/08 , C01B21/082
Abstract: PROBLEM TO BE SOLVED: To convert powder of sialon of a starting raw material to high pressure phase spinel type sialon with only once shock treatment without changing the composition. SOLUTION: The high pressure phase spinel type sialon is represented by the chemical formula: Si6-xAlxOxN8-x (0 =15 GPa pressure for
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公开(公告)号:JP2001261447A
公开(公告)日:2001-09-26
申请号:JP2000081828
申请日:2000-03-17
Applicant: NAT INST FOR MATERIALS SCIENCE
Inventor: MITOMO MAMORU , O SHOMEI , HIROSAKI NAOTO
IPC: C04B35/599
Abstract: PROBLEM TO BE SOLVED: To provide a method for producing a sialon sintered compact which is constituted of only β-sialon and a glass phase present at grain boundary besides α-sialon being stabilized with Ce and is high in hardness and excellent in wear resistance. SOLUTION: A high hardness sialon sintered compact containing Ce-α-sialon and having hardness of >=170 GPa is produced by adding 0.2 to 30 wt.% α-sialon powder previously produced to a mixed powder of Si3N4-AlN-Al2O3-CeO2-system in which Si3N4:AlN:Al2O3:CeO2 is 3 to/2:4 to 6:0 to 0.5:1 in molar ratios and sintering by various sintering methods such as a plasma sintering, a hot pressing, a normal sintering and a gas-pressure sintering method.
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3.
公开(公告)号:JP2003258322A
公开(公告)日:2003-09-12
申请号:JP2002056559
申请日:2002-03-01
Applicant: JAPAN SCIENCE & TECH CORP , NAT INST FOR MATERIALS SCIENCE
Inventor: KAMIMURA YOUICHIRO , MITOMO MAMORU , NISHIMURA SATOYUKI , HIRAI SHINJI , SHIMAKAGE KAZUNOBU
Abstract: PROBLEM TO BE SOLVED: To develop a material for thermoelectric conversion device having a big Seebeck coefficient and a big figure of merit which is acquired by adding electric conductivity. SOLUTION: A lanthanum sulfide sintered compact comprises a β type crystal structure, in which β type lanthanum sulfide powder and metallic palladium particle are mixed and sintered as major constituents, and a trace of γ type ingredient, wherein the sintered compact contains 1-5 percent by mass of metallic palladium and specific resistance is 100 kΩcm or below. It can be manufactured by mixing high purity β type lanthanum sulfide powder containing oxygen as an impurity of 1.1 weight percent or below and metallic palladium particle with particle diameter of 10 μm or below, and after compression molding with a pressure of 25 MPa or over at ordinary temperatures, sintering it at temperatures ranging from 1200°C to 1500°C in a vacuum or an inert gas for more than 30 minutes. COPYRIGHT: (C)2003,JPO
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公开(公告)号:JP2002068843A
公开(公告)日:2002-03-08
申请号:JP2000258568
申请日:2000-08-29
Applicant: NAT INST FOR MATERIALS SCIENCE
Inventor: HIROSAKI NAOTO , NISHIMURA SATOYUKI , YAMAMOTO YOSHINOBU , MITOMO MAMORU
IPC: C04B35/584
Abstract: PROBLEM TO BE SOLVED: To provide a silicon nitride sintered compact having both of high strength and superior antioxidation property at high temperature. SOLUTION: In the sintered compact, the intergranular phase consists of a substantially single phase of Lu4Si2O7N2 crystal phase. The composition of the sintered compact represented in the Si3N4-SiO2-Lu2O3 ternary constitution diagram corresponds to the boundary or inside of triangle ABC having three points of point A: Si3N4, point B: 28 mol% SiO2-72 mol% Lu2O3 and point C: 16 mol% SiO2-84 mol% Lu2O3 as vertexes.
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公开(公告)号:JP2001335367A
公开(公告)日:2001-12-04
申请号:JP2000152779
申请日:2000-05-19
Applicant: JAPAN SCIENCE & TECH CORP , NAT INST FOR MATERIALS SCIENCE
Inventor: KAMIMURA YOUICHIRO , MITOMO MAMORU , NISHIMURA SATOYUKI , HIRAI SHINJI , SHIMAKAGE KAZUNOBU
IPC: C04B35/00 , C04B35/547 , H01L35/16 , H01L35/34 , C04B35/495
Abstract: PROBLEM TO BE SOLVED: To provide a novel material having a large Seebeck coefficient and therefore suitable as a thermoelectric convertion material. SOLUTION: This sintered compact comprises La2S3 or Ce2S3, having a mixed β-and γ-phase in its crystalline structure and having a Seebeck coefficient larger than that of a single γ-phase. The material is produced by hot-pressing highly purified, pulverized La2S3 in β-phase or Ce2S3 in α-phase controlling the oxygen content in a specified range and suppressing the carbon impurity content in a carbon-made mold where the inner surface is coated with h-BN in vacuum.
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公开(公告)号:JP2003096446A
公开(公告)日:2003-04-03
申请号:JP2001288156
申请日:2001-09-21
Applicant: NAT INST FOR MATERIALS SCIENCE
Inventor: MITOMO MAMORU , ENDO TADASHI , UEDA KYOTA
IPC: C09K11/79
Abstract: PROBLEM TO BE SOLVED: To provide a cerium ion activated-lanthanum silicon nitride fluorescent substance satisfying chromaticity of blue color, excellent in thermal stability, mechanical properties and chemical stability and usable in severe circumstances, applicable to VFD (Vacuum Fluorescent Display) and FED (Field Emission Display). SOLUTION: This fluorescent substance is expressed by general formula La1-x Si3 N5 :xCe (x is a amount of activation, 0; x; 1), a part of the lanthanum ion is activated by substituting and forming a solid solution of the cerium ion.
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公开(公告)号:JP2002363554A
公开(公告)日:2002-12-18
申请号:JP2001171831
申请日:2001-06-07
Applicant: NAT INST FOR MATERIALS SCIENCE
Inventor: MITOMO MAMORU , ENDO TADASHI , UEDA KYOTA
IPC: C04B35/599 , C09K11/64 , C09K11/80
Abstract: PROBLEM TO BE SOLVED: To provide an acid nitride phosphor activated with a rare earth element, which can realize a white LED with a higher luminance, using a blue LED as the light source. SOLUTION: This phosphor is represented by the general formula: Mex Si12-(m+n) Al(m+n) On N16-n :Re1y Re2z , wherein a part or the whole of the metal(s) Me (Me is Ca, Mg, Y, or one or more of lanthanide metals except La and Ce) capable of forming a solid solution with α-sialon is substituted by lanthanide metal(s) Re1 (Re1 is one or more of Ce, Pr, Eu, Tb, Yb, and Er) serving as a luminescent center, or two kinds of lanthanide metals Re1 and a coactivator comprising Re2 (Re2 is Dy).
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公开(公告)号:JP2002179414A
公开(公告)日:2002-06-26
申请号:JP2000377010
申请日:2000-12-12
Applicant: NAT INST FOR MATERIALS SCIENCE
Inventor: SEKINE TOSHIMORI , GA KORYO , KOBAYASHI TAKAMICHI , KIMOTO KOJI , MITOMO MAMORU
IPC: C01B21/082
Abstract: PROBLEM TO BE SOLVED: To obtain a spinel-type silicon oxynitride-based new substance by utilizing a shock treatment technology which is a conventional technology and in which shock waves are used. SOLUTION: The spinel-type silicon oxynitride-based new substance is a high pressure phase spinel-type silicon oxynitride expressed by chemical formula: Si3+xO2xN4(=Si3N4.xSiO2, 0 =20 GPa is added within 5 μ-second.
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公开(公告)号:JP2002137968A
公开(公告)日:2002-05-14
申请号:JP2000324327
申请日:2000-10-24
Applicant: NAT INST FOR MATERIALS SCIENCE
Inventor: HIROSAKI NAOTO , NISHIMURA SATOYUKI , YAMAMOTO YOSHINOBU , MITOMO MAMORU
IPC: C04B35/584
Abstract: PROBLEM TO BE SOLVED: To provide a material excellent in creep-resistant property by crystallizing assistant having a high fusing point on grain boundary efficiently, with only an ordinary sintering process dispensing with specific heat treatment. SOLUTION: The silicon nitride sintered compact is characterized in that the sintered compact composed of a grain boundary phase of silicon nitride grain and acid nitride grain, the composition of which is shown on the ternary system constitutional diagram of Si3N4-SiO2-Lu2O3, in a triangle constituted of three points, a point A: Si3N4, a point B: 40 mol% SiO2-60 mol%-Lu2O3, a point C: 60 mol% SiO2-40 mol%-Lu2O3.
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10.
公开(公告)号:EP1783096A4
公开(公告)日:2012-01-04
申请号:EP05751143
申请日:2005-06-14
Applicant: NAT INST FOR MATERIALS SCIENCE , DENKI KAGAKU KOGYO KK
Inventor: MITOMO MAMORU , HIROSAKI NAOTO , EMOTO HIDEYUKI , IBUKIYAMA MASAHIRO
CPC classification number: C01B21/0826 , C01B21/0821 , C01P2002/84 , C01P2004/52 , C01P2004/61 , C04B35/597 , C04B35/6262 , C04B2235/3203 , C04B2235/3206 , C04B2235/3208 , C04B2235/3217 , C04B2235/3224 , C04B2235/3225 , C04B2235/3229 , C04B2235/3865 , C04B2235/3873 , C04B2235/442 , C04B2235/5481 , C04B2235/608 , C04B2235/766 , C04B2235/9646 , C09K11/0883 , C09K11/7734
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