公开(公告)号：JP2003197142A

公开(公告)日：2003-07-11

申请号：JP2001394636

申请日：2001-12-26

Applicant: NAT INST FOR MATERIALS SCIENCE

Inventor： KIMOTO KOJI ,  MATSUI YOSHIO

IPC: H01J37/04 ,  H01J37/153

Abstract: PROBLEM TO BE SOLVED: To improve a coma-free axis adjustment method in a transmission type electron microscope. SOLUTION: In this coma-free axis adjustment method, one TEM image is observed and the direction of incident electrons should be adjusted while viewing the TEM image. For instance, in one embodiment, the tilt angle of the incident electrons should be adjusted so that a transmission spot formed by transmitted electrons coincides with the center of a caustic surface by scattered electrons. Minimum devices required for utilizing the principle of this application are a device for converging the incident electrons into a minute size, a device for forming a defocused TEM image and a device for observing the TEM image. COPYRIGHT: (C)2003,JPO

公开(公告)号：JP2002179414A

公开(公告)日：2002-06-26

申请号：JP2000377010

申请日：2000-12-12

Applicant: NAT INST FOR MATERIALS SCIENCE

Inventor： SEKINE TOSHIMORI ,  GA KORYO ,  KOBAYASHI TAKAMICHI ,  KIMOTO KOJI ,  MITOMO MAMORU

IPC: C01B21/082

Abstract: PROBLEM TO BE SOLVED: To obtain a spinel-type silicon oxynitride-based new substance by utilizing a shock treatment technology which is a conventional technology and in which shock waves are used. SOLUTION: The spinel-type silicon oxynitride-based new substance is a high pressure phase spinel-type silicon oxynitride expressed by chemical formula: Si3+xO2xN4(=Si3N4.xSiO2, 0 =20 GPa is added within 5 μ-second.