公开(公告)号：EP2884525A4

公开(公告)日：2016-04-13

申请号：EP13879581

申请日：2013-08-08

Applicant: NAT INST OF ADVANCED IND SCIEN

Inventor： KATO HIROMITSU ,  MAKINO TOSHIHARU ,  OGURA MASAHIKO ,  TAKEUCHI DAISUKE ,  YAMASAKI SATOSHI ,  HATANO MUTSUKO ,  IWASAKI TAKAYUKI

IPC: H01L21/337 ,  C30B29/04 ,  H01L21/02 ,  H01L21/336 ,  H01L27/098 ,  H01L29/04 ,  H01L29/06 ,  H01L29/16 ,  H01L29/167 ,  H01L29/78 ,  H01L29/808

CPC classification number: H01L29/1602 ,  H01L21/02376 ,  H01L21/0242 ,  H01L21/02444 ,  H01L21/02527 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L29/045 ,  H01L29/0657 ,  H01L29/167 ,  H01L29/66045 ,  H01L29/7802 ,  H01L29/808 ,  H01L29/8083

Abstract: [Problem] To provide a diamond semiconductor device that can remarkably improve latitude of device design and be manufactured efficiently, and a method for manufacturing the same. [Solution] A diamond semiconductor device of the invention includes: a diamond substrate; a diamond step section disposed over substrate surface of the diamond substrate having a {001} crystal face to rise substantially perpendicularly to substrate surface; an n-type phosphorus-doped diamond region; and a diamond insulation region. In the diamond step section, a first step section having a {110} crystal face over a side surface is integrated with a second step section having a {100} crystal face over a side surface. The phosphorus-doped diamond region is formed by crystal growth started from base angle of the step shape of the first step section over the side surface of the first step section and substrate surface of the diamond substrate as growth base planes. The diamond insulation region is formed by crystal growth over the side surface of the second step section and substrate surface of the diamond substrate as growth base planes.