公开(公告)号：EP2975654A4

公开(公告)日：2016-11-09

申请号：EP14762356

申请日：2014-03-17

Applicant: NAT INST OF ADVANCED IND SCIEN

Inventor： MAKINO TOSHIHARU ,  YAMASAKI SATOSHI ,  OOKUSHI HIDEYO ,  OGURA MASAHIKO ,  KATO HIROMITSU ,  TAKEUCHI DAISUKE

IPC: H01L33/34 ,  H01L33/50

CPC classification number: H01L33/343 ,  H01L33/34 ,  H01L33/50 ,  H01L33/508

Abstract: A white light-emitting device of the present invention includes a substrate (101); a diamond semiconductor layer (105) provided on the substrate (101), in which one or a plurality of p-type ± layers (102), a p-type or n-type ³ layer (103), and one or a plurality of n-type ² layers (104) are laminated in this order from the substrate (101); a first electrode (106) provided on the ± layer (102) which injects an electric current; a second electrode (107) provided on the ² layer (104) which injects an electric current; and a fluorescent member (108) which coats a light emission extraction region of the surface of the diamond semiconductor layer.

公开(公告)号：EP2884525A4

公开(公告)日：2016-04-13

申请号：EP13879581

申请日：2013-08-08

Applicant: NAT INST OF ADVANCED IND SCIEN

Inventor： KATO HIROMITSU ,  MAKINO TOSHIHARU ,  OGURA MASAHIKO ,  TAKEUCHI DAISUKE ,  YAMASAKI SATOSHI ,  HATANO MUTSUKO ,  IWASAKI TAKAYUKI

IPC: H01L21/337 ,  C30B29/04 ,  H01L21/02 ,  H01L21/336 ,  H01L27/098 ,  H01L29/04 ,  H01L29/06 ,  H01L29/16 ,  H01L29/167 ,  H01L29/78 ,  H01L29/808

CPC classification number: H01L29/1602 ,  H01L21/02376 ,  H01L21/0242 ,  H01L21/02444 ,  H01L21/02527 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L29/045 ,  H01L29/0657 ,  H01L29/167 ,  H01L29/66045 ,  H01L29/7802 ,  H01L29/808 ,  H01L29/8083

Abstract: [Problem] To provide a diamond semiconductor device that can remarkably improve latitude of device design and be manufactured efficiently, and a method for manufacturing the same. [Solution] A diamond semiconductor device of the invention includes: a diamond substrate; a diamond step section disposed over substrate surface of the diamond substrate having a {001} crystal face to rise substantially perpendicularly to substrate surface; an n-type phosphorus-doped diamond region; and a diamond insulation region. In the diamond step section, a first step section having a {110} crystal face over a side surface is integrated with a second step section having a {100} crystal face over a side surface. The phosphorus-doped diamond region is formed by crystal growth started from base angle of the step shape of the first step section over the side surface of the first step section and substrate surface of the diamond substrate as growth base planes. The diamond insulation region is formed by crystal growth over the side surface of the second step section and substrate surface of the diamond substrate as growth base planes.

公开(公告)号：EP2023381A4

公开(公告)日：2011-11-09

申请号：EP07742189

申请日：2007-04-23

Applicant: NAT INST OF ADVANCED IND SCIEN

Inventor： TOKUDA NORIO ,  UMEZAWA HITOSHI ,  YAMASAKI SATOSHI

IPC: H01L21/205 ,  C23C16/27 ,  C23C16/511 ,  C30B25/20 ,  C30B29/04 ,  H01L21/02

CPC classification number: C23C16/279 ,  C23C16/27 ,  C30B25/205 ,  C30B29/04 ,  H01L21/02376 ,  H01L21/02433 ,  H01L21/02527 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02634 ,  H01L21/02636

公开(公告)号：EP2056365A4

公开(公告)日：2014-06-04

申请号：EP07792454

申请日：2007-08-13

Applicant: NAT INST OF ADVANCED IND SCIEN

Inventor： YAMASAKI SATOSHI ,  MAKINO TOSHIHARU ,  OOKUSHI HIDEYO ,  TOKUDA NORIO ,  KATO HIROMITSU ,  OGURA MASAHIKO ,  WATANABE HIDEYUKI ,  RI SUNG-GI ,  TAKEUCHI DAISUKE

IPC: H01L33/16 ,  H01L33/34 ,  H01L21/02 ,  H01L21/205 ,  H01L33/20 ,  H01L33/38 ,  H01L33/50

CPC classification number: H01L33/34 ,  H01L21/02376 ,  H01L21/02433 ,  H01L21/02527 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/38

公开(公告)号：AU2002354453A1

公开(公告)日：2003-06-23

申请号：AU2002354453

申请日：2002-12-10

Applicant: NAT INST OF ADVANCED IND SCIEN

Inventor： NISHIZAWA MASAYASU ,  YAMASAKI SATOSHI ,  YASUDA TETSUJI

IPC: C01B13/14 ,  C01B13/32 ,  C01B33/12 ,  C23C8/02 ,  C23C8/16 ,  C23C26/00 ,  C23C30/00 ,  H01L21/314 ,  H01L21/316 ,  H01L29/78

Abstract: In a method of manufacturing oxide thin film by adsorbing or depositing oxide forming starting material on a substrate followed by oxide formation, by using water in a liquid state to manufacture the oxide thin film, the advantages of the ALD method are utilized while resolving the tendency to leave impurities in the oxide film produced that is a drawback thereof, so that oxide thin film can be obtained having a reduced concentration of impurities.