公开(公告)号：EP2056365A4

公开(公告)日：2014-06-04

申请号：EP07792454

申请日：2007-08-13

Applicant: NAT INST OF ADVANCED IND SCIEN

Inventor： YAMASAKI SATOSHI ,  MAKINO TOSHIHARU ,  OOKUSHI HIDEYO ,  TOKUDA NORIO ,  KATO HIROMITSU ,  OGURA MASAHIKO ,  WATANABE HIDEYUKI ,  RI SUNG-GI ,  TAKEUCHI DAISUKE

IPC: H01L33/16 ,  H01L33/34 ,  H01L21/02 ,  H01L21/205 ,  H01L33/20 ,  H01L33/38 ,  H01L33/50

CPC classification number: H01L33/34 ,  H01L21/02376 ,  H01L21/02433 ,  H01L21/02527 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/38

公开(公告)号：JP2001168053A

公开(公告)日：2001-06-22

申请号：JP34541099

申请日：1999-12-03

Applicant: NAT INST OF ADVANCED IND SCIEN

Inventor： HASEGAWA MASATAKA ,  NAKADA JOJI ,  OGURA MASAHIKO ,  KOBAYASHI NAOTO ,  OGUSHI HIDEYO ,  TAKEUCHI DAISUKE

IPC: H01L21/263 ,  C30B31/22 ,  H01L21/265

Abstract: PROBLEM TO BE SOLVED: To make ion-implanted diamond single crystal activated in n-type electrically in an annealing step. SOLUTION: In an annealing method, an amorphous layer and a defective layer generated when impurity atoms (M) is implanted into diamond single crystal 1 are restored by heat treatment. During the heat treatment, ion beam is cast and the impurity atoms are implanted to a position of substitution to activate the diamond single crystal electrically.

公开(公告)号：EP2884525A4

公开(公告)日：2016-04-13

申请号：EP13879581

申请日：2013-08-08

Applicant: NAT INST OF ADVANCED IND SCIEN

Inventor： KATO HIROMITSU ,  MAKINO TOSHIHARU ,  OGURA MASAHIKO ,  TAKEUCHI DAISUKE ,  YAMASAKI SATOSHI ,  HATANO MUTSUKO ,  IWASAKI TAKAYUKI

IPC: H01L21/337 ,  C30B29/04 ,  H01L21/02 ,  H01L21/336 ,  H01L27/098 ,  H01L29/04 ,  H01L29/06 ,  H01L29/16 ,  H01L29/167 ,  H01L29/78 ,  H01L29/808

CPC classification number: H01L29/1602 ,  H01L21/02376 ,  H01L21/0242 ,  H01L21/02444 ,  H01L21/02527 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L29/045 ,  H01L29/0657 ,  H01L29/167 ,  H01L29/66045 ,  H01L29/7802 ,  H01L29/808 ,  H01L29/8083

Abstract: [Problem] To provide a diamond semiconductor device that can remarkably improve latitude of device design and be manufactured efficiently, and a method for manufacturing the same. [Solution] A diamond semiconductor device of the invention includes: a diamond substrate; a diamond step section disposed over substrate surface of the diamond substrate having a {001} crystal face to rise substantially perpendicularly to substrate surface; an n-type phosphorus-doped diamond region; and a diamond insulation region. In the diamond step section, a first step section having a {110} crystal face over a side surface is integrated with a second step section having a {100} crystal face over a side surface. The phosphorus-doped diamond region is formed by crystal growth started from base angle of the step shape of the first step section over the side surface of the first step section and substrate surface of the diamond substrate as growth base planes. The diamond insulation region is formed by crystal growth over the side surface of the second step section and substrate surface of the diamond substrate as growth base planes.

公开(公告)号：EP2975654A4

公开(公告)日：2016-11-09

申请号：EP14762356

申请日：2014-03-17

Applicant: NAT INST OF ADVANCED IND SCIEN

Inventor： MAKINO TOSHIHARU ,  YAMASAKI SATOSHI ,  OOKUSHI HIDEYO ,  OGURA MASAHIKO ,  KATO HIROMITSU ,  TAKEUCHI DAISUKE

IPC: H01L33/34 ,  H01L33/50

CPC classification number: H01L33/343 ,  H01L33/34 ,  H01L33/50 ,  H01L33/508

Abstract: A white light-emitting device of the present invention includes a substrate (101); a diamond semiconductor layer (105) provided on the substrate (101), in which one or a plurality of p-type ± layers (102), a p-type or n-type ³ layer (103), and one or a plurality of n-type ² layers (104) are laminated in this order from the substrate (101); a first electrode (106) provided on the ± layer (102) which injects an electric current; a second electrode (107) provided on the ² layer (104) which injects an electric current; and a fluorescent member (108) which coats a light emission extraction region of the surface of the diamond semiconductor layer.

公开(公告)号：JP2001230213A

公开(公告)日：2001-08-24

申请号：JP2000035726

申请日：2000-02-14

Applicant: NAT INST OF ADVANCED IND SCIEN

Inventor： OGURA MASAHIKO ,  HASEGAWA MASATAKA ,  KOBAYASHI NAOTO

IPC: C30B29/04 ,  C22F3/00 ,  H01L21/265

Abstract: PROBLEM TO BE SOLVED: To provide a method for annealing diamond by which the damaged inside of a diamond monocrystal caused by ion implantation or other processes can be restored at a low temperature. SOLUTION: In this method for annealing diamond in which a defective layer generated in the diamond monocrystal at the time of injecting an additional element into the diamond crystal is restored through heat treatment, the temperature of the heat treatment is adjusted to 600-1,100 deg.C, and the inside of the diamond crystal is irradiated with a helium ion beam by adjusting the ion irradiation energy of the ion beam to 40-100 keV.

公开(公告)号：DE60035747D1

公开(公告)日：2007-09-13

申请号：DE60035747

申请日：2000-08-30

Applicant: NAT INST OF ADVANCED IND SCIEN ,  JAPAN SCIENCE & TECH AGENCY

Inventor： TAKEUCHI DAISUKE ,  WATANBE HIDEYUKI ,  OKUSHI HIDEYO ,  HASEGAWA MASATAKA ,  OGURA MASAHIKO ,  KOBAYASHI NAOTO ,  KAJIMURA KOJI ,  YAMANAKA SADANORI

IPC: H01L21/04 ,  H01L21/329 ,  H01L29/16 ,  H01L29/861 ,  H01L31/10 ,  H01L33/34 ,  H01L33/40 ,  H01S3/16 ,  H01S5/30

公开(公告)号：DE60035747T2

公开(公告)日：2008-04-30

申请号：DE60035747

申请日：2000-08-30

Applicant: NAT INST OF ADVANCED IND SCIEN ,  JAPAN SCIENCE & TECH AGENCY

Inventor： TAKEUCHI DAISUKE ,  WATANBE HIDEYUKI ,  OKUSHI HIDEYO ,  HASEGAWA MASATAKA ,  OGURA MASAHIKO ,  KOBAYASHI NAOTO ,  KAJIMURA KOJI ,  YAMANAKA SADANORI

IPC: H01L21/04 ,  H01L21/329 ,  H01L29/16 ,  H01L29/861 ,  H01L31/10 ,  H01L33/34 ,  H01L33/40 ,  H01S3/16 ,  H01S5/30