公开(公告)号：AU2002354453A1

公开(公告)日：2003-06-23

申请号：AU2002354453

申请日：2002-12-10

Applicant: NAT INST OF ADVANCED IND SCIEN

Inventor： NISHIZAWA MASAYASU ,  YAMASAKI SATOSHI ,  YASUDA TETSUJI

IPC: C01B13/14 ,  C01B13/32 ,  C01B33/12 ,  C23C8/02 ,  C23C8/16 ,  C23C26/00 ,  C23C30/00 ,  H01L21/314 ,  H01L21/316 ,  H01L29/78

Abstract: In a method of manufacturing oxide thin film by adsorbing or depositing oxide forming starting material on a substrate followed by oxide formation, by using water in a liquid state to manufacture the oxide thin film, the advantages of the ALD method are utilized while resolving the tendency to leave impurities in the oxide film produced that is a drawback thereof, so that oxide thin film can be obtained having a reduced concentration of impurities.