公开(公告)号：JP2001326188A

公开(公告)日：2001-11-22

申请号：JP2000179094

申请日：2000-05-12

Applicant: NAT INST OF ADVANCED IND SCIEN ,  KA SHOSHI

Inventor： YASUDA TETSUJI ,  YAMAZAKI SATOSHI ,  KA SHOSHI

IPC: B82B3/00 ,  C23C16/30 ,  H01L21/205 ,  H01L21/316 ,  H01L21/318

Abstract: PROBLEM TO BE SOLVED: To perform selective growth of a solid on a fine scale of nano meter with high accuracy in a short time, by readily conducting drawing of a high resolution pattern at a high speed and a low cost, when a solid s selectively grown on a substrate surface. SOLUTION: In this method for growing a solid selective in a defined region on a basic material 1, a silicon nitride film 2 formed on the substrate surface 1 is oxidized locally, according to a desired pattern until the basic material 1 is reached to form a locally oxidized part 3, the locally oxidized part 3 is removed by etching, to form a recessed region 9 exposing the substrate surface 1 on the bottom part 9a thereof, the surfaces of at least the recessed region 9 and the silicon nitride film 2 in the vicinity thereof are coated with silicon dioxide 5 to forma two layer mask, the substrate surface is exposed as a defined region on the bottom part 9a of the recessed region 9, and a solid is selectively grown in the defined region.

公开(公告)号：AU2002354453A1

公开(公告)日：2003-06-23

申请号：AU2002354453

申请日：2002-12-10

Applicant: NAT INST OF ADVANCED IND SCIEN

Inventor： NISHIZAWA MASAYASU ,  YAMASAKI SATOSHI ,  YASUDA TETSUJI

IPC: C01B13/14 ,  C01B13/32 ,  C01B33/12 ,  C23C8/02 ,  C23C8/16 ,  C23C26/00 ,  C23C30/00 ,  H01L21/314 ,  H01L21/316 ,  H01L29/78

Abstract: In a method of manufacturing oxide thin film by adsorbing or depositing oxide forming starting material on a substrate followed by oxide formation, by using water in a liquid state to manufacture the oxide thin film, the advantages of the ALD method are utilized while resolving the tendency to leave impurities in the oxide film produced that is a drawback thereof, so that oxide thin film can be obtained having a reduced concentration of impurities.