Patent search ap:("NAT INST OF ADVANCED IND SCIEN") AND inv:"TOKUDA NORIO" Page 1

1.

发明公开
HIGH-EFFICIENCY INDIRECT TRANSITION SEMICONDUCTOR ULTRAVIOLET LIGHT-EMITTING ELEMENT 审中-公开
Title translation: 高效率间接跃迁半导体紫外光元件

公开(公告)号：EP2056365A4

公开(公告)日：2014-06-04

申请号：EP07792454

申请日：2007-08-13

Applicant: NAT INST OF ADVANCED IND SCIEN

Inventor： YAMASAKI SATOSHI , MAKINO TOSHIHARU , OOKUSHI HIDEYO , TOKUDA NORIO , KATO HIROMITSU , OGURA MASAHIKO , WATANABE HIDEYUKI , RI SUNG-GI , TAKEUCHI DAISUKE

IPC: H01L33/16 , H01L33/34 , H01L21/02 , H01L21/205 , H01L33/20 , H01L33/38 , H01L33/50

CPC classification number: H01L33/34 , H01L21/02376 , H01L21/02433 , H01L21/02527 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L33/38

2.

发明公开
METHOD OF SELECTIVELY FORMING ATOMICALLY FLAT PLANE ON DIAMOND SURFACE, DIAMOND SUBSTRATE PRODUCED BY THE METHOD, AND SEMICONDUCTOR ELEMENT EMPLOYING THE SAME 审中-公开
Title translation: 法的原子级平坦的在一个水平面上DIAMOND由该方法金刚石基板与半导体元件选择性形成THAT

公开(公告)号：EP2023381A4

公开(公告)日：2011-11-09

申请号：EP07742189

申请日：2007-04-23

Applicant: NAT INST OF ADVANCED IND SCIEN

Inventor： TOKUDA NORIO , UMEZAWA HITOSHI , YAMASAKI SATOSHI

IPC: H01L21/205 , C23C16/27 , C23C16/511 , C30B25/20 , C30B29/04 , H01L21/02

CPC classification number: C23C16/279 , C23C16/27 , C30B25/205 , C30B29/04 , H01L21/02376 , H01L21/02433 , H01L21/02527 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02634 , H01L21/02636

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