Abstract:
The disclosed method for the formation of a transparent conductive carbon film solves the problems of high temperature processing and long processing times, which are issues in graphene film deposition by thermal CVD, and uses a crystalline carbon film formed at lower temperatures and in less time using a graphene film. The disclosed method is characterised in that: the substrate temperature is set to 500°C or less; the pressure is set to 50 Pa or less; and a transparent conductive carbon film is deposited on the substrate surface of a copper or aluminium thin film by a microwave surface-wave plasma CVD process under a gas atmosphere in which an oxidation inhibitor for inhibiting the oxidation of the substrate surface is added to a mixed gas comprising a carbon-containing gas and an inert gas as an additive gas.
Abstract:
A carbon film which has carbon particles having the same particle size as one another ranging from 1 to 1000 nm (preferably 2 to 200 nm) present substantially in the thickness direction of the film and which has an amorphous substance at least on the surface of each of the carbon particles at the interfaces and/or gaps between the carbon particles, the amorphous substance serving to prevent the formation of an impurity during the formation of the carbon particles and/or the growth of the carbon particles. The carbon film or the like retains a high transparency, has optical properties of a high refractive index and a low birefringence, is excellent in electrical insulation, is capable of being applied onto various substrates with good adhesion, and is also capable of being formed at a low temperature. Thus, the carbon film is extremely useful in an optical device, an optical glass, a wrist watch, an electronic circuit board, an abrasive tool or a protective film.
Abstract:
Es ist eine Aufgabe der vorliegenden Erfindung, ein SOI-Substrat für Leistungshalbleiterbauteile bereitzustellen, welches gleichzeitig das Problem von herkömmlichen SOI-Substraten, die einen Kohlenstoff-Film als isolierende Schicht (I-Schicht) verwenden, und das Problem der Diamantsynthese durch HFCVD löst. Die Erfindung stellt ein SOI-Substrat für Leistungshalbleiterbauteile mit guten Isolationseigenschaften und guter Wärmeleitfähigkeit bereit, indem eine I-Schicht genommen wird, die eine Hybridstruktur aus einem Kohlenstoff-Film und einem mikrokristallinen Diamantfilm hat, und vorzugsweise eine I-Schicht hat, in der ein Siliziumoxid-Film (SiO2-Film) zwischen dem Silizium-Substrat und dem Kohlenstoff-Film vorgesehen ist.