公开(公告)号：WO2011115197A9

公开(公告)日：2012-01-12

申请号：PCT/JP2011056352

申请日：2011-03-17

Applicant: NAT INST OF ADVANCED IND SCIEN ,  KIM JAEHO ,  ISHIHARA MASATOU ,  KOGA YOSHINORI ,  TSUGAWA KAZUO ,  HASEGAWA MASATAKA ,  IIJIMA SUMIO ,  YAMADA TAKATOSHI

Inventor： KIM JAEHO ,  ISHIHARA MASATOU ,  KOGA YOSHINORI ,  TSUGAWA KAZUO ,  HASEGAWA MASATAKA ,  IIJIMA SUMIO ,  YAMADA TAKATOSHI

IPC: C23C16/26 ,  C23C16/511 ,  C23C16/54 ,  H01B13/00

CPC classification number: C23C16/511 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/188 ,  C23C16/26 ,  C23C16/545 ,  H01B1/04

Abstract: The disclosed method for the formation of a transparent conductive carbon film solves the problems of high temperature processing and long processing times, which are issues in graphene film deposition by thermal CVD, and uses a crystalline carbon film formed at lower temperatures and in less time using a graphene film. The disclosed method is characterised in that: the substrate temperature is set to 500°C or less; the pressure is set to 50 Pa or less; and a transparent conductive carbon film is deposited on the substrate surface of a copper or aluminium thin film by a microwave surface-wave plasma CVD process under a gas atmosphere in which an oxidation inhibitor for inhibiting the oxidation of the substrate surface is added to a mixed gas comprising a carbon-containing gas and an inert gas as an additive gas.

Abstract translation: 所公开的形成透明导电碳膜的方法解决了通过热CVD在石墨烯膜沉积中存在的高温处理和长处理时间的问题，并且使用在较低温度和更短时间内形成的结晶碳膜，使用 石墨烯膜。 所公开的方法的特征在于：将基板温度设定为500℃以下; 压力设定为50Pa以下; 并且通过微波表面波等离子体CVD工艺在氧化气氛中在铜或铝薄膜的基板表面上沉积透明导电性碳膜，其中将用于抑制基板表面的氧化的氧化抑制剂加入到混合 包含含碳气体和作为添加气体的惰性气体的气体。

公开(公告)号：EP2276328A4

公开(公告)日：2015-01-21

申请号：EP09724062

申请日：2009-03-27

Applicant: NAT INST OF ADVANCED IND SCIEN

Inventor： KIM JAEHO ,  TSUGAWA KAZUO ,  ISHIHARA MASATOU ,  HASEGAWA MASATAKA ,  KOGA YOSHINORI

IPC: H05H1/46 ,  C23C16/511 ,  H01J37/32

CPC classification number: C23C16/511 ,  H01J37/32192 ,  H01J37/32229 ,  H05H1/46

公开(公告)号：EP2075091A4

公开(公告)日：2012-10-10

申请号：EP07829735

申请日：2007-10-12

Applicant: NAT INST OF ADVANCED IND SCIEN

Inventor： HASEGAWA MASATAKA ,  TSUGAWA KAZUO ,  ISHIHARA MASATOU ,  KOGA YOSHINORI

IPC: B24D3/00

CPC classification number: B24D11/003 ,  B24B9/16 ,  B24D18/00 ,  C23C16/0254 ,  C23C16/26 ,  C23C30/00 ,  Y10T428/24372 ,  Y10T428/30

公开(公告)号：EP2674396A4

公开(公告)日：2014-03-19

申请号：EP12745110

申请日：2012-02-10

Applicant: NAT INST OF ADVANCED IND SCIEN

Inventor： YAMADA TAKATOSHI ,  KIM JAEHO ,  ISHIHARA MASATOU ,  KOGA YOSHINORI ,  HASEGAWA MASATAKA ,  IIJIMA SUMIO

IPC: C01B31/04

CPC classification number: C01B31/0446 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/184 ,  C01B32/186

公开(公告)号：EP1748091A4

公开(公告)日：2012-11-28

申请号：EP05730663

申请日：2005-04-15

Applicant: NAT INST OF ADVANCED IND SCIEN

Inventor： KOGA YOSHINORI ,  HASEGAWA MASATAKA ,  IIJIMA SUMIO ,  TSUGAWA KAZUO ,  ISHIHARA MASATOU

IPC: C23C16/26 ,  B24D11/00 ,  C01B31/02 ,  C03C17/00 ,  C03C17/22 ,  C23C16/27 ,  G02B1/10

CPC classification number: C23C16/26 ,  B24D11/003 ,  C03C17/007 ,  C03C17/22 ,  C03C2217/282 ,  C03C2217/42 ,  G02B1/105 ,  G02B1/14 ,  Y10T428/30

公开(公告)号：JP2001168053A

公开(公告)日：2001-06-22

申请号：JP34541099

申请日：1999-12-03

Applicant: NAT INST OF ADVANCED IND SCIEN

Inventor： HASEGAWA MASATAKA ,  NAKADA JOJI ,  OGURA MASAHIKO ,  KOBAYASHI NAOTO ,  OGUSHI HIDEYO ,  TAKEUCHI DAISUKE

IPC: H01L21/263 ,  C30B31/22 ,  H01L21/265

Abstract: PROBLEM TO BE SOLVED: To make ion-implanted diamond single crystal activated in n-type electrically in an annealing step. SOLUTION: In an annealing method, an amorphous layer and a defective layer generated when impurity atoms (M) is implanted into diamond single crystal 1 are restored by heat treatment. During the heat treatment, ion beam is cast and the impurity atoms are implanted to a position of substitution to activate the diamond single crystal electrically.

公开(公告)号：JP2001230213A

公开(公告)日：2001-08-24

申请号：JP2000035726

申请日：2000-02-14

Applicant: NAT INST OF ADVANCED IND SCIEN

Inventor： OGURA MASAHIKO ,  HASEGAWA MASATAKA ,  KOBAYASHI NAOTO

IPC: C30B29/04 ,  C22F3/00 ,  H01L21/265

Abstract: PROBLEM TO BE SOLVED: To provide a method for annealing diamond by which the damaged inside of a diamond monocrystal caused by ion implantation or other processes can be restored at a low temperature. SOLUTION: In this method for annealing diamond in which a defective layer generated in the diamond monocrystal at the time of injecting an additional element into the diamond crystal is restored through heat treatment, the temperature of the heat treatment is adjusted to 600-1,100 deg.C, and the inside of the diamond crystal is irradiated with a helium ion beam by adjusting the ion irradiation energy of the ion beam to 40-100 keV.

公开(公告)号：EP2708617A4

公开(公告)日：2014-12-31

申请号：EP12781837

申请日：2012-05-10

Applicant: NAT INST OF ADVANCED IND SCIEN

Inventor： TSUGAWA KAZUO ,  KAWAKI SHUNSUKE ,  ISHIHARA MASATOU ,  KOGA YOSHINORI ,  HASEGAWA MASATAKA ,  KIM JAEHO

IPC: C23C16/27 ,  C10M103/02 ,  C10N30/06 ,  C10N40/02

CPC classification number: C10M103/02 ,  C10M103/06 ,  C10M177/00 ,  C10M2201/041 ,  C10M2201/042 ,  C10M2201/081 ,  C10M2201/102 ,  C10N2230/06 ,  C10N2240/10 ,  C10N2250/08 ,  C10N2250/10 ,  C10N2250/141 ,  C23C16/0272 ,  C23C16/26 ,  C23C16/511 ,  Y10T428/24355 ,  Y10T428/30

公开(公告)号：EP1911859A4

公开(公告)日：2009-08-05

申请号：EP06767832

申请日：2006-07-04

Applicant: NAT INST OF ADVANCED IND SCIEN

Inventor： HASEGAWA MASATAKA ,  TSUGAWA KAZUO ,  KOGA YOSHINORI ,  ISHIHARA MASATOU ,  IIJIMA SUMIO

IPC: C23C16/26 ,  C01B31/02 ,  C03C17/22 ,  C23C16/27

CPC classification number: C23C16/26 ,  C03C17/007 ,  C03C17/3411 ,  C03C2217/42 ,  C03C2218/153 ,  C23C16/0272 ,  C23C16/27 ,  C23C16/277 ,  C23C16/279 ,  C23C16/511 ,  G04B39/006 ,  Y10T428/268 ,  Y10T428/269

Abstract: A carbon film which has carbon particles having the same particle size as one another ranging from 1 to 1000 nm (preferably 2 to 200 nm) present substantially in the thickness direction of the film and which has an amorphous substance at least on the surface of each of the carbon particles at the interfaces and/or gaps between the carbon particles, the amorphous substance serving to prevent the formation of an impurity during the formation of the carbon particles and/or the growth of the carbon particles. The carbon film or the like retains a high transparency, has optical properties of a high refractive index and a low birefringence, is excellent in electrical insulation, is capable of being applied onto various substrates with good adhesion, and is also capable of being formed at a low temperature. Thus, the carbon film is extremely useful in an optical device, an optical glass, a wrist watch, an electronic circuit board, an abrasive tool or a protective film.

公开(公告)号：EP2540862A4

公开(公告)日：2015-12-09

申请号：EP11747486

申请日：2011-02-25

Applicant: NAT INST OF ADVANCED IND SCIEN

Inventor： HASEGAWA MASATAKA ,  ISHIHARA MASATOU ,  KOGA YOSHINORI ,  KIM JAEHO ,  TSUGAWA KAZUO ,  IIJIMA SUMIO

IPC: C23C16/26 ,  B82Y30/00 ,  B82Y40/00 ,  C01B31/02 ,  C01B31/04 ,  C01B31/20 ,  C23C16/02 ,  C30B29/02 ,  C30B29/04 ,  C30B29/20

CPC classification number: C23C16/0281 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/05 ,  C01B32/186 ,  C01B32/50 ,  C23C16/26 ,  C30B29/02 ,  C30B29/04 ,  C30B29/20 ,  Y10T428/30 ,  Y10T428/31678