公开(公告)号：EP3163601A2

公开(公告)日：2017-05-03

申请号：EP16002296

申请日：2010-01-20

Applicant: NICHIA CORP

Inventor： KURAMOTO MASAFUMI ,  OGAWA SATORU ,  NIWA MIKI

IPC: H01L21/58 ,  H01L21/60 ,  H01L33/40 ,  H01L33/48 ,  H01L33/62 ,  H01S5/022

CPC classification number: H01L33/44 ,  H01L23/08 ,  H01L23/293 ,  H01L23/49579 ,  H01L23/49582 ,  H01L24/17 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/83 ,  H01L33/62 ,  H01L2224/05568 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/2712 ,  H01L2224/2745 ,  H01L2224/275 ,  H01L2224/29023 ,  H01L2224/2908 ,  H01L2224/29083 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/29139 ,  H01L2224/29187 ,  H01L2224/2919 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/73265 ,  H01L2224/83048 ,  H01L2224/83055 ,  H01L2224/83075 ,  H01L2224/83201 ,  H01L2224/83203 ,  H01L2224/83205 ,  H01L2224/83207 ,  H01L2224/83439 ,  H01L2224/83487 ,  H01L2224/8383 ,  H01L2224/8384 ,  H01L2224/83894 ,  H01L2224/83895 ,  H01L2224/83896 ,  H01L2224/83907 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01056 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/01063 ,  H01L2924/01064 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01105 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/0541 ,  H01L2924/0665 ,  H01L2924/09701 ,  H01L2924/12035 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15747 ,  H01L2924/1576 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/1579 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/201 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20108 ,  H01L2924/20109 ,  H01L2924/2011 ,  H01L2924/20111 ,  H01L2924/3025 ,  H01L2933/0066 ,  H01S5/0226 ,  H01L2924/00015 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2224/48 ,  H01L2224/05599

Abstract: An object of the invention is to provide a method for producing a conductive member having low electrical resistance, and the conductive member is obtained using a low-cost stable conductive material composition that does not contain an adhesive. Disclosed is a method for producing a semiconductor device in which silver oxide (520, 620, 720) provided on a surface of a base (500, 600, 700) and silver or silver oxide (140, 240, 340) provided on a surface of a semiconductor element (100, 200, 300) are bonded, the method including the steps of arranging a semiconductor element (100, 200, 300) on a base (500, 600, 700) such that silver or silver oxide (140, 240, 340) provided on a surface of the semiconductor element (100, 200, 300) is in contact with silver oxide (520, 620, 720) provided on a surface of the base (500, 600, 700), temporarily bonding the semiconductor element (100, 200, 300) and the base (500, 600, 700) by applying a pressure or an ultrasonic vibration to the semiconductor element (100, 200, 300) or the base (500, 600, 700), and permanently bonding the semiconductor element (100, 200, 300) and the base (500, 600, 700) by applying heat having a temperature of 150 to 900°C to the semiconductor element (100, 200, 300) and the base (500, 600, 700). The step of temporarily bonding and the step of permanently bonding may be performed simultaneously. The step of permanently bonding may be performed in air or in an oxygen environment, or in a nitrogen environment. The semiconductor element (100, 200, 300) and the base (500, 600, 700) may be heated in advance at 150 to 900°C before the step of temporarily bonding. A pressure of 5 to 50 MPa may be applied in the step of temporarily bonding. The semiconductor element (100, 200, 300) may be a light emitting semiconductor element.

Abstract translation: 本发明的一个目的是提供一种用于生产具有低电阻的导电性构件的方法，所述导电构件是用一种低成本的稳定的导电材料组合物并不含有获得，在粘接剂。 是（340 140，240）的表面上设置用于在其中氧化银（520，620，720）的半导体器件提供了一种基站（500，600，700），并且银或氧化银的表面上的方法公开 的半导体元件（100，200，300）键合的，该方法包括在基体上布置的半导体元件（100，200，300）的步骤（500，600，700）检测没有银或氧化银（140， 设置在半导体元件（100，200,300）的表面上的240，340）与设置在基座（500，600，700的表面上的氧化银（520，620，720）接触），暂时接合 半导体元件（100，200，300）和基部（500，600，700）通过施加到所述半导体元件（100，200，300）或所述基部（500，600,700）的压力或超声波振动，和 半导体元件（100，200，300）和基部（500，600，700）通过施加具有150至900℃的温度下对半导体元件的热永久地结合（100，200，300） 和所述基部（500，600，700）。 的暂时接合步骤和永久地结合的步骤可以同时进行。 永久接合的步骤可以在空气中或在氧气中进行，以环境，或在氮气环境中。 半导体元件（100，200，300）和基部（500，600，700）可以预先在150的临时粘结步骤之前被加热到900℃。 5至50MPa的压力可以以临时粘结的步骤中施加。 半导体元件（100，200，300）可以是半导体发光元件。

公开(公告)号：EP3163602A2

公开(公告)日：2017-05-03

申请号：EP16002297

申请日：2010-01-20

Applicant: NICHIA CORP

Inventor： KURAMOTO MASAFUMI ,  OGAWA SATORU ,  NIWA MIKI

IPC: H01L21/58 ,  H01L21/60 ,  H01L33/40 ,  H01L33/48 ,  H01L33/62 ,  H01S5/022

CPC classification number: H01L33/44 ,  H01L23/08 ,  H01L23/293 ,  H01L23/49579 ,  H01L23/49582 ,  H01L24/17 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/83 ,  H01L33/62 ,  H01L2224/05568 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/2712 ,  H01L2224/2745 ,  H01L2224/275 ,  H01L2224/29023 ,  H01L2224/2908 ,  H01L2224/29083 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/29139 ,  H01L2224/29187 ,  H01L2224/2919 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/73265 ,  H01L2224/83048 ,  H01L2224/83055 ,  H01L2224/83075 ,  H01L2224/83201 ,  H01L2224/83203 ,  H01L2224/83205 ,  H01L2224/83207 ,  H01L2224/83439 ,  H01L2224/83487 ,  H01L2224/8383 ,  H01L2224/8384 ,  H01L2224/83894 ,  H01L2224/83895 ,  H01L2224/83896 ,  H01L2224/83907 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01056 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/01063 ,  H01L2924/01064 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01105 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/0541 ,  H01L2924/0665 ,  H01L2924/09701 ,  H01L2924/12035 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15747 ,  H01L2924/1576 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/1579 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/201 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20108 ,  H01L2924/20109 ,  H01L2924/2011 ,  H01L2924/20111 ,  H01L2924/3025 ,  H01L2933/0066 ,  H01S5/0226 ,  H01L2924/00015 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2224/48 ,  H01L2224/05599

Abstract: An object of the invention is to provide a method for producing a conductive member having low electrical resistance, and the conductive member is obtained using a low-cost stable conductive material composition that does not contain an adhesive. Disclosed is a method for producing a semiconductor device in which silver (520, 620, 720) formed by silver sputtering, silver vapour deposition or silver plating and provided on a surface of a base (500, 600, 700) and silver (140, 240, 340) formed by silver sputtering, silver vapour deposition or silver plating and provided on a surface of a semiconductor element (100, 200, 300) are bonded, the method comprising the steps of arranging the semiconductor element (100, 200, 300) on the base (500, 600, 700) such that said silver (140, 240, 340) provided on a surface of the semiconductor element (100, 200, 300) is in contact with said silver (520, 620, 720) provided on a surface of the base (500, 600, 700), temporarily bonding the semiconductor element (100, 200, 300) and the base (500, 600, 700) by applying a pressure or an ultrasonic vibration to the semiconductor element (100, 200, 300) or the base (500, 600, 700), and permanently bonding the semiconductor element (100, 200, 300) and the base (500, 600, 700) by applying heat having a temperature of 150 to 900°C to the semiconductor element (100, 200, 300) and the base (500, 600, 700) in air or in an oxygen environment. The step of temporarily bonding and the step of permanently bonding may be performed simultaneously. The semiconductor element (100, 200, 300) and the base (500, 600, 700) may be heated in advance at 150 to 900°C before the step of temporarily bonding. A pressure of 5 to 50 MPa may be applied before the step of temporarily bonding. The semiconductor element (100, 200, 300) may be a light emitting semiconductor element.

Abstract translation: 本发明的一个目的是提供一种用于生产具有低电阻的导电性构件的方法，所述导电构件是用一种低成本的稳定的导电材料组合物并不含有获得，在粘接剂。 公开了一种用于生产，其中银以银溅射，银蒸镀或银电镀形成，并且设置在基座（500，600，700）和银的表面上的半导体器件（520，620，720）的方法（140， 240，340）所形成由银溅射，银蒸镀或电镀银并提供了一种半导体元件（100，200,300）的表面上的键合，该方法包括配置半导体元件（100，200的步骤，300 ）基体（500,600，700），检查这就是说，340设置在半导体元件（100，200,300）的表面上的银（140，240）是与所述银（520，620，720接触）上 设置在基座（500，600，700），通过施加压力或超声波振动到半导体元件暂时的半导体元件（100，200，300）和基部（500，600，700）接合（的表面上 100，200，300）或所述基部（500，600,700），和永久地接合半导体元件（100，200,300）和第 E型灯头（500，600，700）通过施加具有150〜900℃的半导体元件（100，200，300），并在空气中或在氧气环境中的基站（500,600，700）的热。 的暂时接合步骤和永久地结合的步骤可以同时进行。 半导体元件（100，200，300）和基部（500，600，700）可以预先在150的临时粘结步骤之前被加热到900℃。 5至50MPa的压力可能暂时结合步骤之前施加。 半导体元件（100，200，300）可以是半导体发光元件。

公开(公告)号：EP2407980A4

公开(公告)日：2014-09-03

申请号：EP10802279

申请日：2010-07-21

Applicant: NICHIA CORP

Inventor： KURAMOTO MASAFUMI ,  OGAWA SATORU ,  NIWA MIKI ,  SUGANUMA KATSUAKI ,  KIM KEUN-SOO

IPC: H01B13/00 ,  B22F1/00 ,  H01B1/22 ,  H01L23/00 ,  H01L33/62

CPC classification number: H01B1/22 ,  H01L24/29 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L2224/29 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48097 ,  H01L2224/48247 ,  H01L2224/48997 ,  H01L2224/73265 ,  H01L2224/83439 ,  H01L2224/8384 ,  H01L2224/85205 ,  H01L2224/85951 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01042 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01056 ,  H01L2924/01058 ,  H01L2924/01063 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/09701 ,  H01L2924/12035 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/15747 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00014 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2924/00012

Abstract: The object of the present invention is to provide a method for producing a conductive material that has a low electric resistance and that is obtained using an inexpensive and stable conductive material composition. A conductive material having a low electric resistance can be obtained by a method including the step of heating a conductive material composition that contains at least one of a full-cured or semi-cured thermosetting resin and a thermoplastic resin, as well as silver particles. Such a conductive material is a conductive material that includes fused silver particles, and thermosetting resin fine particles that have an average particle diameter of 0.1 µm to 10 µm both inclusive and are dispersed in the fused silver particles. Further, in such a conductive material is a conductive material that includes fused silver particles, and a thermoplastic resin welded among the fused silver particles.

公开(公告)号：EP2239743A4

公开(公告)日：2014-03-05

申请号：EP09702097

申请日：2009-01-09

Applicant: NICHIA CORP

Inventor： KURAMOTO MASAFUMI ,  OGAWA SATORU ,  SUGANUMA KATSUAKI ,  KIM KEUN-SOO

IPC: H01L33/62 ,  H01B1/02 ,  H05K1/09

CPC classification number: H01L33/62 ,  B23K1/0008 ,  B23K1/0016 ,  B23K35/025 ,  H01B1/02 ,  H01L2924/0002 ,  H01L2933/0066 ,  H05K1/092 ,  Y10T29/49144 ,  H01L2924/00

Abstract: An object of the present invention is to provide a method for producing a conductive material that allows a low electric resistance to be generated, and that is obtained by using an inexpensive and stable conductive material composition containing no adhesive. The conductive material can be provided by a producing method that includes the step of sintering a first conductive material composition that contains silver particles having an average particle diameter (median diameter) of 0.1 µm to 15 µm, and a metal oxide, so as to obtain a conductive material. The conductive material can be provided also by a method that includes the step of sintering a second conductive material composition that contains silver particles having an average particle diameter (median diameter) of 0.1 µm to 15 µm in an atmosphere of oxygen or ozone, or ambient atmosphere, at a temperature in a range of 150°C to 320°C, so as to obtain a conductive material.

Abstract translation: 本发明的一个目的是提供一种用于制造导电材料确实提供的方法允许生成具有低电阻，并且也通过使用廉价且稳定的导电性材料的组合物不含有粘合剂而获得的。 直径可以通过制造方法来提供所述导电材料做包括烧结的第一导电材料组合物的步骤做了含有上的0.1微米至15微米平均粒子（中位粒径）的银粒子和金属氧化物，从而获得 导电材料。 可以设置导电材料，从而通过下述方法确实包括烧结的第二导电材料的组合物所做的步骤含有对在0.1微米至15微米的平均粒径（中值粒径）在氧气，臭氧或环境的气氛的银粒子 气氛下，在〜320℃的范围内的150℃的温度，从而获得导电性材料。

公开(公告)号：EP2390903A4

公开(公告)日：2012-10-17

申请号：EP10733350

申请日：2010-01-20

Applicant: NICHIA CORP

Inventor： KURAMOTO MASAFUMI ,  OGAWA SATORU ,  NIWA MIKI

IPC: H01L21/58 ,  H01L21/60 ,  H01L33/40 ,  H01L33/48 ,  H01L33/62 ,  H01S5/022

CPC classification number: H01L33/44 ,  H01L23/08 ,  H01L23/293 ,  H01L23/49579 ,  H01L23/49582 ,  H01L24/17 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/83 ,  H01L33/62 ,  H01L2224/05568 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/2712 ,  H01L2224/2745 ,  H01L2224/275 ,  H01L2224/29023 ,  H01L2224/2908 ,  H01L2224/29083 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/29139 ,  H01L2224/29187 ,  H01L2224/2919 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/73265 ,  H01L2224/83048 ,  H01L2224/83055 ,  H01L2224/83075 ,  H01L2224/83201 ,  H01L2224/83203 ,  H01L2224/83205 ,  H01L2224/83207 ,  H01L2224/83439 ,  H01L2224/83487 ,  H01L2224/8383 ,  H01L2224/8384 ,  H01L2224/83894 ,  H01L2224/83895 ,  H01L2224/83896 ,  H01L2224/83907 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01056 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/01063 ,  H01L2924/01064 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01105 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/0541 ,  H01L2924/0665 ,  H01L2924/09701 ,  H01L2924/12035 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15747 ,  H01L2924/1576 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/1579 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/201 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20108 ,  H01L2924/20109 ,  H01L2924/2011 ,  H01L2924/20111 ,  H01L2924/3025 ,  H01L2933/0066 ,  H01S5/0226 ,  H01L2924/00015 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2224/48 ,  H01L2224/05599

公开(公告)号：EP2390932A4

公开(公告)日：2012-06-27

申请号：EP10733354

申请日：2010-01-20

Applicant: NICHIA CORP

Inventor： KURAMOTO MASAFUMI ,  OGAWA SATORU ,  NIWA MIKI

IPC: H01L33/36 ,  H01L21/18 ,  H01L21/52

CPC classification number: H01L33/641 ,  H01L21/187 ,  H01L24/17 ,  H01L24/29 ,  H01L24/32 ,  H01L24/81 ,  H01L24/83 ,  H01L33/62 ,  H01L2224/0345 ,  H01L2224/0401 ,  H01L2224/06102 ,  H01L2224/13099 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/29 ,  H01L2224/2908 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/29386 ,  H01L2224/32225 ,  H01L2224/812 ,  H01L2224/81801 ,  H01L2224/81894 ,  H01L2224/81907 ,  H01L2224/83801 ,  H01L2224/8383 ,  H01L2224/8384 ,  H01L2224/83907 ,  H01L2224/85205 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01056 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/01063 ,  H01L2924/01064 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01105 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/0665 ,  H01L2924/09701 ,  H01L2924/12035 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/157 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/1579 ,  H01L2924/19041 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/01026 ,  H01L2924/3512 ,  H01L2924/0541 ,  H01L2924/00014 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2224/2929

公开(公告)号：JP2011029420A

公开(公告)日：2011-02-10

申请号：JP2009173889

申请日：2009-07-27

Applicant: Nichia Corp ,  日亜化学工業株式会社

Inventor： OGAWA SATORU ,  TSUJIO TAKESHI ,  KURODA KOJI

IPC: H01L33/48

CPC classification number: H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/48465 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/00

Abstract: PROBLEM TO BE SOLVED: To provide an optical semiconductor device of thin type and high efficiency of light extraction.
SOLUTION: The method of manufacturing the optical semiconductor device includes the steps of: (a) forming a protective film having a plurality of separate opening parts on a supporting substrate; (b) forming a conductive member having a thickness less than or equal to the thickness of the protective film in the opening part; (c) removing the protective film; (d) working a side surface of the conductive member so as to be curved; (e) forming a base substance including a light-shielding resin between the conductive members; (f) mounting an optical semiconductor element on the conductive member; (g) coating the optical semiconductor element with a sealing member made of a translucent resin; (h) removing the supporting substrate; and (i) dicing the optical semiconductor element to obtain the optical semiconductor device.
COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供一种薄型的光学半导体器件和高效率的光提取。 解决方案：制造光学半导体器件的方法包括以下步骤：（a）在支撑衬底上形成具有多个分开的开口部分的保护膜; （b）形成厚度小于或等于开口部分中保护膜厚度的导电部件; （c）去除保护膜; （d）使导电部件的侧面成为弯曲状; （e）在导电部件之间形成包括遮光树脂的基体物质; （f）将光学半导体元件安装在导电构件上; （g）用半透明树脂制成的密封件涂覆光学半导体元件; （h）去除支撑基板; 和（i）对该光学半导体元件进行切割以获得该光学半导体器件。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2010170916A

公开(公告)日：2010-08-05

申请号：JP2009013711

申请日：2009-01-23

Applicant: Nichia Corp ,  日亜化学工業株式会社

Inventor： KURAMOTO MASAFUMI ,  OGAWA SATORU ,  NIWA MIKI ,  SUGANUMA KATSUAKI ,  KIM KEUNSOO

IPC: H01B13/00 ,  H01B1/02 ,  H01L33/48

CPC classification number: H01L2224/32245 ,  H01L2224/48097 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2924/00 ,  H01L2224/48095

Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing a conductive material which generates a low electric resistance value and is obtained by using an inexpensive and stable composition for a conductive material excluding an adhesive agent.
SOLUTION: In the method for manufacturing achieving the conductive material, it is achieved by calcining the composition for the conductive material containing silver particles having the average particle diameter (median diameter) of 0.1-15 μm, and an inorganic filler having the average particle diameter (median diameter) of 0.1-15 μm and having a linear expansion coefficient smaller than that of silver and an inorganic filler applied with silver coating and having a linear expansion coefficient smaller than that of silver at temperature with a range of 150-320°C under existence of metal oxide and under an oxygen, ozone or air atmosphere, or a non-oxidizing atmosphere.
COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供一种制造导电材料的方法，其产生低电阻值，并且通过使用不含粘合剂的导电材料的廉价且稳定的组合物获得。 解决方案：在实现导电材料的制造方法中，通过煅烧含有平均粒径（中值粒径）为0.1〜15μm的银粒子的导电材料的组合物和具有 平均粒径（中值粒径）为0.1〜15μm，线膨胀系数小于银，无机填料使用银涂层，线性膨胀系数小于银，其温度范围为150〜 在氧气，臭氧或空气气氛或非氧化气氛下，在金属氧化物存在下，320℃。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2010278474A

公开(公告)日：2010-12-09

申请号：JP2010195755

申请日：2010-09-01

Applicant: Nichia Corp ,  日亜化学工業株式会社

Inventor： OGAWA SATORU ,  KISHIMOTO TOMOHISA

IPC: H01L33/56 ,  C03C8/04 ,  C03C8/08 ,  C03C8/10 ,  C03C8/14 ,  C03C8/20

CPC classification number: H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/00

Abstract: PROBLEM TO BE SOLVED: To form a glass sealing portion which conforms to a complex three-dimensional shape of a substrate to which a light emitting element is mounted easily with excellent mass productivity without causing big damage to a surrounding member. SOLUTION: A light emitting device includes: a light emitting element 12 having a pair of electrodes; a substrate 11 to which the light emitting element is mounted; substrate electrodes which are mounted to the substrate and are connected to the respective electrodes of the light emitting element; and a glass sealing portion 16a sealing the light emitting element. The glass sealing portion is formed by fusion-bonding glass powder provided around the light emitting element on the substrate or sealing materials composed of the glass powder and other materials. The ratio of primary particles contained in the sealing material to all particles of the sealing material is within a range of 20-100%. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：为了形成符合发光元件安装的基板的复杂三维形状的玻璃密封部分，其容易以优异的批量生产率而不会对周围部件造成大的损害。 解决方案：发光器件包括：具有一对电极的发光元件12; 安装有发光元件的基板11; 基板电极，其安装到基板并连接到发光元件的各个电极; 以及密封发光元件的玻璃密封部16a。 玻璃密封部通过将设置在基板上的发光元件周围的玻璃粉末或由玻璃粉末等材料构成的密封材料进行熔融而形成。 包封在密封材料中的一次颗粒与密封材料的所有颗粒的比例在20-100％的范围内。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2010268013A

公开(公告)日：2010-11-25

申请号：JP2010195717

申请日：2010-09-01

Applicant: Nichia Corp ,  日亜化学工業株式会社

Inventor： OGAWA SATORU

IPC: H01L33/56

CPC classification number: H01L24/97 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: PROBLEM TO BE SOLVED: To form a glass sealing part corresponding to a complicated three-dimensional shape on a substrate on which a light emitting element is mounted simply and sufficiently in mass productivity with less damage to be exerted to a surrounding member.
SOLUTION: In a light emitting device 30 including the light emitting element 12 having a pair of electrodes, the substrate 11 on which the light emitting element is mounted, a substrate electrode provided on the substrate and electrically connected to the electrode of the light emitting element, and the glass sealing part 16a sealing the light emitting element, wherein the glass sealing part is formed by fusing a sealing material including powder glass or a mixture of the powder glass and other materials supplied to the periphery of the light emitting element on the substrate.
COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：为了在其上安装有发光元件的基板上形成对应于复杂的三维形状的玻璃密封部分，其在简单且充分的批量生产率中以较少的损坏被施加到周围部件。 解决方案：在包括具有一对电极的发光元件12的发光器件30中，安装有发光元件的基板11，设置在基板上并与电极连接的基板电极 发光元件和密封发光元件的玻璃密封部分16a，其中玻璃密封部分通过将包括粉末玻璃或粉末玻璃的混合物的密封材料和供应到发光元件的周边的其它材料 在基板上。 版权所有（C）2011，JPO＆INPIT