Abstract:
A technique for providing high-contrast images of defects in semiconductor devices (10) and arrays of such devices (10), by illuminating each semiconductor device (10) under inspection with broadband infrared radiation, and then forming an image of radiation that is specularly reflected from the semiconductor device. Many semiconductor devices and arrays of such devices have a metal backing layer (16) that specularly reflects the illumination back into an appropriately positioned and aligned camera (14), selected to be sensitive to infrared wavelengths at which the semiconductor device (10) materials are relatively transparent.
Abstract:
Collector optics (70) for an EUV radiation source (10) for collecting EUV radiation (78). The collector optics (70) includes an elliptical dish reflector (72) where light generated at a focal point (76) of the reflector (72) is collected by the reflector (72) and is directed to a collection location (82). A frustal annular reflector (90) is positioned around an outer edge (84) of the dish reflector (72) to collect more of the EUV radiation (78) that may otherwise be lost. The radiation (78) reflected by the annular reflector (90) is directed to a center axicon reflector (94) positioned between the focal point (76) of the dish reflector (72) and the collection location (82) to redirect the radiation (78) reflected by the annular reflector (90) to be within a predetermined collection angle.